TS3A24157RSER

Product Folder Sample & Buy Technical Documents Support & Community Tools & Software TS3A24157 SCDS208B – JUNE 2007 – REVISED OCTOBER 2016 TS3A24157 0.65-Ω 2-Channel SPDT Analog Switch 2-Channel 2:1 Multiplexer and Demultiplexer 1 Features 3 Description • • • • • • • • The TS3A24157 is a bidirectional, 2-channel, singlepole double-throw (SPDT) analog switch that is designed to operate from 1.65 V to 3.6 V. The device offers low ON-state resistance and excellent ON-state resistance matching with the break-before-make feature, to prevent signal distortion during the transfer of a signal from one channel to another. The device has excellent total harmonic distortion (THD) performance and consumes very-low power. These features make this device suitable for portable audio applications. 1 • Specified Break-Before-Make Switching Low ON-State Resistance (0.65-Ω Maximum) Low Charge Injection Excellent ON-State Resistance Matching Low Total Harmonic Distortion 1.65-V to 3.6-V Single-Supply Operation Bidirectional Signal Paths Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) PART NUMBER TS3A24157 PACKAGE BODY SIZE (NOM) UQFN (10) 1.50 mm × 2.00 mm VSSOP (10) 3.00 mm × 3.00 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. 2 Applications • • • • • • • • • • Device Information(1) Cell Phones PDAs Portable Instrumentation Audio and Video Signal Routing Low-Voltage Data Acquisition Systems Communication Circuits Modems Hard Drives Computer Peripherals Wireless Terminals and Peripherals Functional Block Diagram SPDT COM1 IN1 NO1 Logic Control SPDT COM2 IN2 NC1 NC2 NO2 Logic Control Copyright © 2016, Texas Instruments Incorporated 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. TS3A24157 SCDS208B – JUNE 2007 – REVISED OCTOBER 2016 www.ti.com Table of Contents 1 2 3 4 5 6 7 8 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 4 6.1 6.2 6.3 6.4 6.5 6.6 6.7 6.8 4 4 4 4 5 6 7 8 Absolute Maximum Ratings ...................................... ESD Ratings.............................................................. Recommended Operating Conditions....................... Thermal Information .................................................. Electrical Characteristics: 3-V Supply ...................... Electrical Characteristics: 2.5-V Supply .................... Electrical Characteristics: 1.8-V Supply .................... Typical Characteristics .............................................. Parameter Measurement Information ................ 10 Detailed Description ............................................ 14 8.1 Overview ................................................................. 14 8.2 Functional Block Diagram ....................................... 14 8.3 Feature Description................................................. 14 8.4 Device Functional Modes........................................ 14 9 Application and Implementation ........................ 15 9.1 Application Information............................................ 15 9.2 Typical Application .................................................. 15 10 Power Supply Recommendations ..................... 16 11 Layout................................................................... 16 11.1 Layout Guidelines ................................................. 16 11.2 Layout Example .................................................... 16 12 Device and Documentation Support ................. 17 12.1 12.2 12.3 12.4 12.5 12.6 12.7 Device Support...................................................... Documentation Support ........................................ Receiving Notification of Documentation Updates Community Resources.......................................... Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 17 18 18 18 18 18 18 13 Mechanical, Packaging, and Orderable Information ........................................................... 19 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision A (September 2007) to Revision B Page • Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section. ................................................................................................. 1 • Deleted Ordering Information table; see POA at the end of the data sheet........................................................................... 1 • Deleted Summary of Characteristics table ............................................................................................................................. 1 • Changed V+ pin name to VCC................................................................................................................................................ 3 • Added Thermal Information table ........................................................................................................................................... 4 2 Submit Documentation Feedback Copyright © 2007–2016, Texas Instruments Incorporated Product Folder Links: TS3A24157 TS3A24157 www.ti.com SCDS208B – JUNE 2007 – REVISED OCTOBER 2016 5 Pin Configuration and Functions DGS Package 10-Pin VSSOP Top View VCC RSE Package 10-Pin UQFN Top View 1 10 VCC NO1 2 9 COM1 NC2 3 8 IN1 NO2 4 7 IN2 GND 5 6 COM2 1 9 COM1 NO1 2 8 IN1 NC2 3 7 IN2 NO2 4 6 COM2 GND 5 Not to scale NC1 10 NC1 Not to scale Pin Functions PIN NO. NAME I/O DESCRIPTION 1 NC1 I/O Normally closed signal path 2 NO1 I/O Normally open signal path 3 NC2 I/O Normally closed signal path 4 NO2 I/O Normally open signal path 5 GND — Ground 6 COM2 I/O Common signal path 7 IN2 I Digital control to connect COM2 to NO2 or NC2 Digital control to connect COM1 to NO1 or NC1 8 IN1 I 9 COM1 I/O Common signal path 10 VCC — Power supply Submit Documentation Feedback Copyright © 2007–2016, Texas Instruments Incorporated Product Folder Links: TS3A24157 3 TS3A24157 SCDS208B – JUNE 2007 – REVISED OCTOBER 2016 www.ti.com 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) (2) (3) Supply voltage Analog signal voltage (4) Digital input voltage MIN MAX UNIT –0.5 3.6 V –0.5 VCC + 0.5 V –0.5 3.6 V Analog port diode current VNC, VNO, VCOM < 0 –50 50 mA ON-state switch current VNC, VNO, VCOM = 0 to VCC –300 300 mA ON-state peak switch current (5) VNC, VNO, VCOM = 0 to VCC –500 500 mA Digital input clamp current VIN < 0 –50 mA Continuous current through VCC 100 Continuous current through GND –100 Storage temperature, Tstg –65 (1) (2) (3) (4) (5) mA mA 150 °C Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltages are with respect to ground, unless otherwise specified. The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum. This value is limited to 5.5 V (maximum). Pulse at 1-ms duration < 10% duty cycle. 6.2 ESD Ratings VALUE V(ESD) (1) (2) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) ±2000 Charged-device model (CDM), per JEDEC specification JESD22-C101 (2) ±1000 UNIT V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) VCC MIN MAX 1.65 3.6 NC1, NC2 0 VCC NO1, NO2 0 VCC COM1, COM2 0 VCC 0 VCC Supply voltage VNC VNO Analog signal voltage VCOM VIN Digital input voltage UNIT V V V 6.4 Thermal Information TS3A24157 THERMAL METRIC (1) DGS (VSSOP) RSE (UQFN) UNIT 10 PINS 10 PINS RθJA Junction-to-ambient thermal resistance 188.5 160.3 °C/W RθJC(top) Junction-to-case (top) thermal resistance 76.5 77.8 °C/W RθJB Junction-to-board thermal resistance 108.2 82.2 °C/W ψJT Junction-to-top characterization parameter 15.3 4.3 °C/W ψJB Junction-to-board characterization parameter 106.8 82.2 °C/W (1) 4 For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. Submit Documentation Feedback Copyright © 2007–2016, Texas Instruments Incorporated Product Folder Links: TS3A24157 TS3A24157 www.ti.com SCDS208B – JUNE 2007 – REVISED OCTOBER 2016 6.5 Electrical Characteristics: 3-V Supply VCC = 3 V, TA = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX 0.5 0.65 UNIT ANALOG SWITCH rPEAK Peak ON resistance 0 ≤ (VNC or VNO) ≤ VCC, VCC = 2.7 V, ICOM = –100 mA, Switch ON, See Figure 10 TA = 25°C rON ON-state resistance VNC or VNO = 2 V, VCC = 2.7 V, ICOM = –100 mA, Switch ON, See Figure 10 TA = 25°C ΔrON ON-state resistance match between channels VNC or VNO = 2 V or 0.8 V, VCC = 2.7 V, ICOM = –100 mA, Switch ON, See Figure 10 TA = 25°C rON(FLAT) ON-state resistance flatness VCC = 2.7 V, ICOM = –100 mA, Switch ON, See Figure 10 –40°C ≤ TA ≤ 85°C 0.75 0.45 –40°C ≤ TA ≤ 85°C 0.05 –40°C ≤ TA ≤ 85°C 0.01 –40°C ≤ TA ≤ 85°C NC and NO OFF leakage current VNC or VNO = 1 V and VCOM = 3 V, or VNC or VNO = 3 V and VCOM = 1 V; VCC = 3.6 V, Switch OFF, See Figure 11 TA = 25°C INC(ON), INO(ON) NC and NO ON leakage current VNC or VNO = 1 V or 3 V, VCOM = Open, VCC = 3.6 V, Switch ON, See Figure 12 TA = 25°C ICOM(ON) COM ON leakage current VNC or VNO = Open, VCOM = 1 V or 3 V, VCC = 3.6 V, Switch ON, See Figure 12 TA = 25°C Ω Ω 0.025 TA = 25°C INC(OFF), INO(OFF) 0.07 0.08 0 ≤ (VNC or VNO) ≤ VCC VNC or VNO = 2 V or 0.8 V 0.6 0.65 Ω –40°C ≤ TA ≤ 85°C –40°C ≤ TA ≤ 85°C –40°C ≤ TA ≤ 85°C 0.04 Ω 0.1 –50 50 –250 250 –50 50 –400 400 –50 50 –400 400 nA nA nA DIGITAL CONTROL INPUTS (IN1, IN2) (1) VIH Input logic high 2.7 V ≤ VCC ≤ 3.6 V, –40°C ≤ TA ≤ 85°C VIL Input logic low 2.7 V ≤ VCC ≤ 3.6 V, –40°C ≤ TA ≤ 85°C IIH, IIL 1.4 TA = 25°C Input leakage current VIN = 3.6 V or GND, VCC = 3.6 V tON Turnon time VCOM = VCC, RL = 50 Ω, CL = 35 pF, See Figure 14 VCC = 3 V, TA = 25°C tOFF Turnoff time VCOM = VCC, RL = 50 Ω, CL = 35 pF, See Figure 14 VCC = 3 V, TA = 25°C tBBM Break-before-make time VNC = VNO = VCC, RL = 50 Ω, CL = 35 pF, See Figure 15 VCC = 3 V, TA = 25°C QC Charge injection VGEN = 0, RGEN = 0, CL = 1 nF, See Figure 19 CNC(OFF), CNO(OFF) NC and NO OFF capacitance CNC(ON), CNO(ON) V 0.5 –50 –40°C ≤ TA ≤ 85°C 5 –150 50 150 V nA DYNAMIC 20 2.7 V ≤ VCC ≤ 3.6 V, –40°C ≤ TA ≤ 85°C 40 12 2.7 V ≤ VCC ≤ 3.6 V, –40°C ≤ TA ≤ 85°C 25 30 1 2.7 V ≤ VCC ≤ 3.6 V, –40°C ≤ TA ≤ 85°C 35 10 0.5 25 30 ns ns ns 8.75 pC (VNC or VNO) = VCC or GND, Switch OFF, See Figure 13 50 pF NC and NO ON capacitance (VNC or VNO) = VCC or GND, Switch ON, See Figure 13 140 pF CCOM(ON) COM ON capacitance VCOM = VCC or GND, Switch ON, See Figure 13 140 pF CI Digital input capacitance VIN = VCC or GND, See Figure 13 BW Bandwidth OISO XTALK THD 2 pF RL = 50 Ω, Switch ON, See Figure 16 50 MHz OFF isolation RL = 50 Ω, f = 1 MHz, See Figure 17 –72 dB Crosstalk RL = 50 Ω, f = 1 MHz, See Figure 18 –72 dB Total harmonic distortion RL = 600 Ω, CL = 50 pF, f = 20 Hz to 20 kHz, See Figure 20 Positive supply current VIN = VCC or GND, VCC = 3.6 V 0.005% SUPPLY ICC (1) TA = 25°C 15 –40°C ≤ TA ≤ 85°C 200 1200 nA All unused digital inputs of the device must be held at VCCor GND to ensure proper device operation. See Implications of Slow or Floating CMOS Inputs. Submit Documentation Feedback Copyright © 2007–2016, Texas Instruments Incorporated Product Folder Links: TS3A24157 5 TS3A24157 SCDS208B – JUNE 2007 – REVISED OCTOBER 2016 www.ti.com 6.6 Electrical Characteristics: 2.5-V Supply VCC = 2.5 V, TA = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX 0.55 0.75 UNIT ANALOG SWITCH rPEAK Peak ON resistance 0 ≤ (VNO or VNC) ≤ VCC, VCC = 2.3 V, ICOM = –8 mA, Switch ON, See Figure 10 TA = 25°C rON ON-state resistance VNO or VNC = 1.8 V, VCC = 2.3 V, ICOM = –8 mA, Switch ON, See Figure 10 TA = 25°C ΔrON ON-state resistance match between channels VNO or VNC = 1.8 V or 0.8 V, VCC = 2.3 V, ICOM = –8 mA, Switch ON, See Figure 10 TA = 25°C rON(FLAT) ON-state resistance flatness VCC = 2.3 V, ICOM = –8 mA, Switch ON, See Figure 10 –40°C ≤ TA ≤ 85°C 0.9 0.56 –40°C ≤ TA ≤ 85°C 0.85 0.1 –40°C ≤ TA ≤ 85°C 0.1 TA = 25°C NC and NO OFF leakage current VNC or VNO = 0.5 V and VCOM = 2.2 V, or VNC or VNO = 2.2 V and VCOM = 0.5 V; VCC = 2.7 V, Switch OFF, See Figure 11 TA = 25°C INC(ON), INO(ON) NC and NO ON leakage current VNC or VNO = 0.5 V or 2.2 V, VCOM = Open, VCC = 2.7 V, Switch ON, See Figure 12 TA = 25°C ICOM(ON) COM ON leakage current VNC or VNO = Open, VCOM = 0.5 V or 2.2 V, VCC = 2.7 V, Switch ON, See Figure 12 TA = 25°C –40°C ≤ TA ≤ 85°C –40°C ≤ TA ≤ 85°C –40°C ≤ TA ≤ 85°C Ω Ω 0.15 0.17 –40°C ≤ TA ≤ 85°C INC(OFF), INO(OFF) 0.15 0.15 0 ≤ (VNO or VNC) ≤ VCC VNO or VNC = 0.8 V or 1.8 V 0.75 Ω Ω 0.2 –50 50 –250 250 –50 50 –400 400 –50 50 –400 400 nA nA nA DIGITAL CONTROL INPUTS (IN1, IN2) (1) VIH Input logic high 2.3 V ≤ VCC ≤ 2.7 V, –40°C ≤ TA ≤ 85°C VIL Input logic low 2.3 V ≤ VCC ≤ 2.7 V, –40°C ≤ TA ≤ 85°C IIH, IIL 1.25 V 0.5 TA = 25°C –50 50 –40°C ≤ TA ≤ 85°C –50 50 Input leakage current VIN = 2.7 V or GND, VCC = 2.7 V tON Turnon time VCOM = VCC, RL = 50 Ω, CL = 35 pF, See Figure 14 VCC = 2.5 V, TA = 25°C tOFF Turnoff time VCOM = VCC, RL = 50 Ω, CL = 35 pF, See Figure 14 VCC = 2.5 V, TA = 25°C tBBM Break-before- make time VNC = VNO = VCC, RL = 50 Ω, CL = 35 pF, See Figure 15 VCC = 2.5 V, TA = 25°C 2 2.3 V ≤ VCC ≤ 2.7 V, –40°C ≤ TA ≤ 85°C 1 QC Charge injection VGEN = 0, RGEN = 0, CL = 1 nF, See Figure 19 CNC(OFF), CNO(OFF) NC and NO OFF capacitance CNC(ON), CNO(ON) V nA DYNAMIC 23 2.3 V ≤ VCC ≤ 2.7 V, –40°C ≤ TA ≤ 85°C 45 50 17 2.3 V ≤ VCC ≤ 2.7 V, –40°C ≤ TA ≤ 85°C 27 30 14 30 35 ns ns ns 8 pC VNC or VNO = VCC or GND, Switch OFF, See Figure 13 50 pF NC and NO ON capacitance VNC or VNO = VCC or GND, Switch ON, See Figure 13 140 pF CCOM(ON) COM ON capacitance VCOM = VCC or GND, Switch ON, See Figure 13 140 pF CI Digital input capacitance VIN = VCC or GND, See Figure 13 BW Bandwidth OISO XTALK THD 2 pF RL = 50 Ω, Switch ON, See Figure 16 50 MHz OFF isolation RL = 50 Ω, f = 1 MHz, See Figure 17 –72 dB Crosstalk RL = 50 Ω, f = 1 MHz, See Figure 18 –72 dB Total harmonic distortion RL = 600 Ω, CL = 50 pF, f = 20 Hz to 20 kHz, See Figure 20 Positive supply current VIN = VCC or GND, VCC = 2.7 V 0.006% SUPPLY ICC (1) 6 TA = 25°C –40°C ≤ TA ≤ 85°C 10 150 700 nA All unused digital inputs of the device must be held at VCCor GND to ensure proper device operation. See Implications of Slow or Floating CMOS Inputs. Submit Documentation Feedback Copyright © 2007–2016, Texas Instruments Incorporated Product Folder Links: TS3A24157 TS3A24157 www.ti.com SCDS208B – JUNE 2007 – REVISED OCTOBER 2016 6.7 Electrical Characteristics: 1.8-V Supply VCC = 1.8 V, TA = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT ANALOG SWITCH rPEAK Peak ON resistance 0 ≤ (VNO or VNC) ≤ VCC, VCC = 1.65 V, ICOM = –2 mA, Switch ON, See Figure 10 TA = 25°C rON ON-state resistance VNO or VNC = 1.5 V, VCC = 1.65 V, ICOM = –2 mA, Switch ON, See Figure 10 TA = 25°C ΔrON ON-state resistance match between channels VNO or VNC = 0.6 V or 1.5 V, VCC = 1.65 V, ICOM = –2 mA, Switch ON, See Figure 10 TA = 25°C rON(FLAT) ON-state resistance flatness VCC = 1.65 V, ICOM = –2 mA, Switch ON, See Figure 10 0.8 1.4 0.6 0.95 –40°C ≤ TA ≤ 85°C 1 0.1 0.15 –40°C ≤ TA ≤ 85°C 0.15 0 ≤ (VNO or VNC) ≤ VCC VNO or VNC = 0.6 V or 1.5 V 1.25 –40°C ≤ TA ≤ 85°C 0.35 TA = 25°C INC(OFF), INO(OFF) NC and NO OFF leakage current VNC or VNO = 0.3 V and VCOM = 1.65 V, or VNC or VNO = 1.65 V and VCOM = 0.3 V; VCC = 1.65, Switch OFF, See Figure 11 TA = 25°C INC(ON), INO(ON) NC and NO ON leakage current VNC or VNO = 0.3 V or 1.65 V, VCOM = Open, VCC = 1.95 V, Switch ON, See Figure 12 TA = 25°C ICOM(ON) COM ON leakage current VNC or VNO = Open, VCOM = 0.3 V or 1.65 V, VCC = 1.95 V, Switch ON, See Figure 12 TA = 25°C –40°C ≤ TA ≤ 85°C –40°C ≤ TA ≤ 85°C –40°C ≤ TA ≤ 85°C Ω Ω 0.13 Ω 0.05 –40°C ≤ TA ≤ 85°C Ω 0.2 –50 50 –250 250 –50 50 –400 400 –50 50 –400 400 nA nA nA DIGITAL CONTROL INPUTS (IN1, IN2) (1) VIH Input logic high 1.65 V ≤ VCC ≤ 1.95 V, –40°C ≤ TA ≤ 85°C VIL Input logic low 1.65 V ≤ VCC ≤ 1.95 V, –40°C ≤ TA ≤ 85°C IIH, IIL 1 V 0.4 25°C 0 Input leakage current VIN = 1.95 V or GND, VCC = 1.95 V tON Turnon time VCOM = VCC, RL = 50 Ω, CL = 35 pF, See Figure 14 VCC = 1.8 V, TA = 25°C tOFF Turnoff time VCOM = VCC, RL = 50 Ω, CL = 35 pF, See Figure 14 VCC = 1.8 V, TA = 25°C tBBM Break-before- make time VNC = VNO = VCC, RL = 50 Ω, CL = 35 pF, See Figure 15 VCC = 1.8 V, TA = 25°C 2 1.65 V ≤ VCC ≤ 1.95 V, –40°C ≤ TA ≤ 85°C 1 QC Charge injection VGEN = 0, RGEN = 0, CL = 1 nF, See Figure 19 CNC(OFF), CNO(OFF) NC and NO OFF capacitance CNC(ON), CNO(ON) –40°C ≤ TA ≤ 85°C 50 150 V nA DYNAMIC 33 1.65 V ≤ VCC ≤ 1.95 V, –40°C ≤ TA ≤ 85°C 75 80 24 1.65 V ≤ VCC ≤ 1.95 V, –40°C ≤ TA ≤ 85°C 35 40 20 40 50 ns ns ns 4 pC VNC or VNO = VCC or GND, Switch OFF, See Figure 13 50 pF NC and NO ON capacitance VNC or VNO = VCC or GND, Switch ON, See Figure 13 140 pF CCOM(ON) COM ON capacitance VCOM = VCC or GND, Switch ON, See Figure 13 140 pF CI Digital input capacitance VIN = VCC or GND, See Figure 13 BW Bandwidth OISO XTALK THD 2 pF RL = 50 Ω, Switch ON, See Figure 16 48 MHz OFF isolation RL = 50 Ω, f = 1 MHz, See Figure 17 –73 dB Crosstalk RL = 50 Ω, f = 1 MHz, See Figure 18 –72 dB Total harmonic distortion RL = 600 Ω, CL = 50 pF, f = 20 Hz to 20 kHz, See Figure 20 Positive supply current VIN = VCC or GND, VCC = 1.95 V 0.005% Supply ICC (1) TA = 25°C 10 –40°C ≤ TA ≤ 85°C 100 600 nA All unused digital inputs of the device must be held at VCCor GND to ensure proper device operation. See Implications of Slow or Floating CMOS Inputs. Submit Documentation Feedback Copyright © 2007–2016, Texas Instruments Incorporated Product Folder Links: TS3A24157 7 TS3A24157 SCDS208B – JUNE 2007 – REVISED OCTOBER 2016 www.ti.com 6.8 Typical Characteristics 0.9 0.7 0.8 0.6 0.7 0.5 0.4 0.5 rON (Ω) rON (Ω) 0.6 0.4 0.3 0.3 0.2 0.2 –40ºC 25ºC 85ºC 0.1 –40ºC 25ºC 85ºC 0.1 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.6 1.4 1.8 0 0.5 1.5 1 VCOM (V) 2.5 2 VCOM (V) VCC = 1.65 V VCC = 2.3 V Figure 1. rON vs VCOM Figure 2. rON vs VCOM 20 0.6 1.8 V 2.5 V 3V 0 0.5 –20 –40 QC (pC) rON (Ω) 0.4 0.3 –60 –80 –100 0.2 –120 –140 –40ºC 25ºC 85ºC 0.1 –160 0 –180 0 0.5 1.5 1 2 2.5 3 0 0.5 1 1.5 VCOM (V) 2 2.5 3 3.5 VCOM (V) VCC = 2.7 V Figure 4. Charge Injection vs VCOM Figure 3. rON vs VCOM 2 35 tON tOFF 30 1.8 V 2.5 V 3V 0 –2 25 Gain (dB) tON/tOFF (ns) –4 20 15 –6 –8 –10 10 –12 5 –14 0 1.5 8 2 2.5 3 3.5 –16 1.E+04 1.E+05 1.E+06 1.E+07 Supply Voltage (V) Frequency (Hz) Figure 5. tON and tOFF vs Supply Voltage Figure 6. Bandwidth Submit Documentation Feedback 1.E+08 1.E+09 Copyright © 2007–2016, Texas Instruments Incorporated Product Folder Links: TS3A24157 TS3A24157 www.ti.com SCDS208B – JUNE 2007 – REVISED OCTOBER 2016 Typical Characteristics (continued) 0E+00 0 –1E+01 –10 –2E+01 Crosstalk (dB) Off Isolation (dB) –20 –3E+01 –4E+01 –5E+01 –30 –40 –50 –6E+01 –60 –7E+01 1.8 V 2.5 V 3V –8E+01 –9E+01 1E+04 1E+05 1E+06 1E+07 1E+08 1.8 V 2.5 V 3V –70 1E+09 –80 1.E+03 1.E+04 1.E+05 Frequency (Hz) 1.E+06 1.E+07 1.E+08 1.E+09 Frequency (Hz) Figure 7. OFF Isolation Figure 8. Crosstalk 4.E-07 –40ºC 25ºC 85ºC 4.E-07 3.E-07 I+ (A) 3.E-07 2.E-07 2.E-07 1.E-07 5.E-08 0.E+00 –5.E-08 0 0.5 1 1.5 2 2.5 3 3.5 4 V+ (V) Figure 9. Power-Supply Current vs VCC Submit Documentation Feedback Copyright © 2007–2016, Texas Instruments Incorporated Product Folder Links: TS3A24157 9 TS3A24157 SCDS208B – JUNE 2007 – REVISED OCTOBER 2016 www.ti.com 7 Parameter Measurement Information VCC VNC NC COM + VCOM Channel ON VNO NO r on = IN VI ICOM VCOM –VNO or VNC I COM VI = V IH or V IL + GND Figure 10. ON-State Resistance VCC VNC NC COM + VCOM + VNO NO OFF-State Leakage Current Channel OFF VI = V IH or V IL IN VI + GND INC(OFF), INC(PWROFF), INO(OFF), INO(PWROFF), ICOM(OFF), ICOM(PWROFF) Figure 11. OFF-State Leakage Current VCC VNC NC COM + VNO NO VI VCOM ON-State Leakage Current Channel ON VI = V IH or V IL IN + GND ICOM(ON), INC(ON), INO(ON) Figure 12. ON-State Leakage Current 10 Submit Documentation Feedback Copyright © 2007–2016, Texas Instruments Incorporated Product Folder Links: TS3A24157 TS3A24157 www.ti.com SCDS208B – JUNE 2007 – REVISED OCTOBER 2016 Parameter Measurement Information (continued) VCC Capacitance Meter VNC NC VNO NO VBI AS = V CC or GND VI = V CC or GND VCOM COM VBI AS VI Capacitance is measured at NC, NO, COM, and IN inputs during ON and OFF conditions. IN GND CI, CCOM(ON), CNC(OFF), CNO(OFF), CNC(ON), CNO(ON) Figure 13. Capacitance VCC VCOM NC or NO VNC or V NO NC or NO CL(2) TEST RL CL VCOM tON 50 Ω 35 pF VCC tOFF 50 Ω 35 pF VCC COM RL IN VI CL(2) GND (1) RL VCC Logic Input (VI) 50% 50% 0 tON tOFF 90% 90% (VNC or V NO) (1) (2) All input pulses are supplied by generators having the following characteristics: • PRR ≤ 10 MHz • ZO = 50 Ω • tr < 5 ns • tf < 5 ns CL includes probe and jig capacitance. Figure 14. Turnon and Turnoff Time Submit Documentation Feedback Copyright © 2007–2016, Texas Instruments Incorporated Product Folder Links: TS3A24157 11 TS3A24157 SCDS208B – JUNE 2007 – REVISED OCTOBER 2016 www.ti.com Parameter Measurement Information (continued) VCC NC or NO V+ Logic Input (VI) VNC or V NO VCOM 50% 0 COM NC or NO CL(2) tBBM Logic Input(1) (1) A. 90% (VCOM) IN VI 90% RL VNC or VNO = VCC RL = 50 CL = 35 pF GND All input pulses are supplied by generators having the following characteristics: • PRR ≤ 10 MHz • ZO = 50 Ω • tr < 5 ns • tf < 5 ns CL includes probe and jig capacitance. Figure 15. Break-Before-Make Time VCC Network Analyzer 50 Ω VNC NC Channel ON: NC to COM COM Source Signal VCOM VI = VCC or GND NO Network Analyzer Setup IN VI 50 Ω + Source Power = 0 dBm (632-mV P-P at 50-Ω load) GND DC Bias = 350 mV Figure 16. Bandwidth VCC Network Analyzer Channel OFF: NC to COM 50 Ω VNC NC COM Source Signal 50 Ω VCOM VI = VCC or GND NO Network Analyzer Setup IN Source Power = 0 dBm (632-mV P-P at 50-Ωload) VI 50 Ω + GND DC Bias = 350 mV Figure 17. OFF Isolation 12 Submit Documentation Feedback Copyright © 2007–2016, Texas Instruments Incorporated Product Folder Links: TS3A24157 TS3A24157 www.ti.com SCDS208B – JUNE 2007 – REVISED OCTOBER 2016 Parameter Measurement Information (continued) VCC Network Analyzer Channel ON: NC to COM 50 Ω VNC Channel OFF: NO to COM NC VCOM Source Signal VNO VI 50 Ω VI = VCC or GND NO Network Analyzer Setup 50 Ω IN + Source Power = 0 dBm (632-mV P-P at 50-Ω load) GND DC Bias = 350 mV Figure 18. Crosstalk VCC RGEN VIH OFF ON OFF V IL NC or NO COM + VGEN Logic Input (VI) VCOM ΔVCOM VCOM NC or NO CL(2) VI VGEN = 0 to VCC IN Logic Input(1) (1) (2) RGEN = 0 CL = 1 nF QC = C L ×⋅ΔVCOM VI = V IH or V IL GND All input pulses are supplied by generators having the following characteristics: • PRR ≤ 10 MHz • ZO = 50 Ω • tr < 5 ns • tf < 5 ns CL includes probe and jig capacitance. Figure 19. Charge Injection VI = V IH or V IL Channel ON: COM to NO VSOURCE = VCC P-P Source Signal = 20 Hz to 20 kHz RL = 600 Ω CL = 50 pF VCC /2 VCC Audio Analyzer RL 10 µF Source Signal 10 µF NO COM 600 Ω 600 Ω CL(1) VI IN GND 600 Ω (1) CL includes probe and jig capacitance. Figure 20. Total Harmonic Distortion Submit Documentation Feedback Copyright © 2007–2016, Texas Instruments Incorporated Product Folder Links: TS3A24157 13 TS3A24157 SCDS208B – JUNE 2007 – REVISED OCTOBER 2016 www.ti.com 8 Detailed Description 8.1 Overview The TS3A24157 is a bidirectional, 2-channel, single-pole double-throw (SPDT) analog switch. This switch offers low ON-state resistance and excellent THD performance which makes it great for interfacing with an ADC. 8.2 Functional Block Diagram SPDT COM1 Logic Control IN1 SPDT COM2 IN2 NC1 NO1 NC2 NO2 Logic Control Copyright © 2016, Texas Instruments Incorporated 8.3 Feature Description The TS3A24157 is a bidirectional device that has two single-pole, double-throw switches. The two channels of the switch are controlled independently by two digital signals; one digital control for each single-pole, doublethrow switch. 8.4 Device Functional Modes To allow signals to pass between the NC and COM pins you must set the digital control IN pin Low To allow signals to pass between the NO and COM pins you must set the digital control IN pin High Table 1. Function Table 14 IN NC TO COM, COM TO NC NO TO COM, COM TO NO L ON OFF H OFF ON Submit Documentation Feedback Copyright © 2007–2016, Texas Instruments Incorporated Product Folder Links: TS3A24157 TS3A24157 www.ti.com SCDS208B – JUNE 2007 – REVISED OCTOBER 2016 9 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 9.1 Application Information The switches are bidirectional, so the NO, NC, and COM pins can be used as either inputs or outputs. 9.2 Typical Application 3.3 V 0.1 mF 0.1 mF VCC TS3A24157 System Controller Switch Control Logic IN1 IN2 NO1 Device 1 COM1 NC1 Device 2 NO2 Device 3 NC2 Device 4 Signal Path COM2 GND COM4 Copyright © 2016, Texas Instruments Incorporated Figure 21. Typical Application Schematic 9.2.1 Design Requirements The TS3A24157 can be properly operated without any external components. When unused, pins COM, NC, and NO may be left floating. Digital control pins IN must be pulled up to VCC or down to GND to avoid undesired switch positions that could result from the floating pin. 9.2.2 Detailed Design Procedure Ensure that all of the signals passing through the switch are within the ranges specified in Recommended Operating Conditions to ensure proper performance. Submit Documentation Feedback Copyright © 2007–2016, Texas Instruments Incorporated Product Folder Links: TS3A24157 15 TS3A24157 SCDS208B – JUNE 2007 – REVISED OCTOBER 2016 www.ti.com Typical Application (continued) 9.2.3 Application Curves 0.6 0.5 rON (Ω) 0.4 0.3 0.2 –40ºC 25ºC 85ºC 0.1 0 0 0.5 1 1.5 2 2.5 3 VCOM (V) Figure 22. rON VCC = 2.7 V vs VCOM 10 Power Supply Recommendations TI recommends proper power-supply sequencing for all CMOS devices. Do not exceed the absolute-maximum ratings, because stresses beyond the listed ratings can cause permanent damage to the device. Always sequence VCC on first, followed by NO, NC, or COM. Although it is not required, power-supply bypassing improves noise margin and prevents switching noise propagation from the VCC supply to other components. A 0.1-μF capacitor, connected from VCC to GND, is adequate for most applications 11 Layout 11.1 Layout Guidelines High-speed switches require proper layout and design procedures for optimum performance. Reduce stray inductance and capacitance by keeping traces short and wide. Ensure that bypass capacitors are placed as close to the device as possible. Use large ground planes where possible. 11.2 Layout Example VCC = VIA to GND Plane 0603 Cap To Device 1 NC1 VCC To Device 3 To DeviceNO1 3 COM1 To Device 3 To Device 1/2 To Device 2 To System To Device 3 To DeviceNC2 3 IN1 To DeviceNO2 3 IN2 To Device 3 To System To Device 4 To Device 3 To Device 3/4 COM2 To Device To DeviceGND 3 3 Figure 23. TS3A24157 Example Layout 16 Submit Documentation Feedback Copyright © 2007–2016, Texas Instruments Incorporated Product Folder Links: TS3A24157 TS3A24157 www.ti.com SCDS208B – JUNE 2007 – REVISED OCTOBER 2016 12 Device and Documentation Support 12.1 Device Support 12.1.1 Device Nomenclature VCOM Voltage at COM. VNC Voltage at NC. VNO Voltage at NO. rON Resistance between COM and NC or COM and NO ports when the channel is ON. rPEAK Peak ON-state resistance over a specified voltage range. ΔrON Difference of rON between channels in a specific device. rON(FLAT) Difference between the maximum and minimum value of rON in a channel over the specified range of conditions. INC(OFF) Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the OFF state under worst-case input and output conditions. INC(PWROFF) Leakage current measured at the NC port during the power-down condition (VCC = 0). INO(OFF) Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF state under worst-case input and output conditions. INO(PWROFF) Leakage current measured at the NO port during the power-down condition (VCC = 0). INC(ON) Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the ON state and the output (COM) open. INO(ON) Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the output (COM) open. ICOM(ON) Leakage current measured at the COM port, with the corresponding channel (COM to NO or COM to NC) in the ON state and the output (NC or NO) open. ICOM(PWROFF) Leakage current measured at the COM port during the power-down condition (VCC = 0). VIH Minimum input voltage for logic high for the control input (IN). VIL Maximum input voltage for logic low for the control input (IN). VI Voltage at the control input (IN). IIH, IIL Leakage current measured at the control input (IN). tON Turnon time for the switch. This parameter is measured under the specified range of conditions and by the propagation delay between the digital control (IN) signal and analog output (COM, NC, or NO) signal when the switch is turning ON. tOFF Turnoff time for the switch. This parameter is measured under the specified range of conditions and by the propagation delay between the digital control (IN) signal and analog output (COM, NC, or NO) signal when the switch is turning OFF. tBBM Break-before-make time. This parameter is measured under the specified range of conditions and by the propagation delay between the output of two adjacent analog channels (NC and NO) when the control signal changes state. QC Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NC, NO, or COM) output. This is measured in coulomb (C) and measured by the total charge induced due to switching of the control input. Charge injection, QC = CL × ΔVCOM, CL is the load capacitance and ΔVCOM is the change in analog output voltage. CNC(OFF) Capacitance at the NC port when the corresponding channel (NC to COM) is OFF. CNO(OFF) Capacitance at the NO port when the corresponding channel (NO to COM) is OFF. Submit Documentation Feedback Copyright © 2007–2016, Texas Instruments Incorporated Product Folder Links: TS3A24157 17 TS3A24157 SCDS208B – JUNE 2007 – REVISED OCTOBER 2016 www.ti.com Device Support (continued) CNC(ON) Capacitance at the NC port when the corresponding channel (NC to COM) is ON. CNO(ON) Capacitance at the NO port when the corresponding channel (NO to COM) is ON. CCOM(ON) Capacitance at the COM port when the corresponding channel (COM to NC or COM to NO) is ON. CI Capacitance of control input (IN). OISO OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specific frequency, with the corresponding channel (NC to COM or NO to COM) in the OFF state. XTALK Crosstalk is a measurement of unwanted signal coupling from an ON channel to an OFF channel (NC to NO or NO to NC). This is measured in a specific frequency and in dB. BW Bandwidth of the switch. This is the frequency in which the gain of an ON channel is –3 dB below the DC gain. THD Total harmonic distortion describes the signal distortion caused by the analog switch. This is defined as the ratio of root mean square (RMS) value of the second, third, and higher harmonic to the absolute magnitude of the fundamental harmonic. ICC Static power-supply current with the control (IN) pin at VCC or GND. 12.2 Documentation Support 12.2.1 Related Documentation For related documentation see the following: Implications of Slow or Floating CMOS Inputs (SCBA004) 12.3 Receiving Notification of Documentation Updates To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document. 12.4 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 12.5 Trademarks E2E is a trademark of Texas Instruments. All other trademarks are the property of their respective owners. 12.6 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 12.7 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 18 Submit Documentation Feedback Copyright © 2007–2016, Texas Instruments Incorporated Product Folder Links: TS3A24157 TS3A24157 www.ti.com SCDS208B – JUNE 2007 – REVISED OCTOBER 2016 13 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. Submit Documentation Feedback Copyright © 2007–2016, Texas Instruments Incorporated Product Folder Links: TS3A24157 19 PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) TS3A24157DGSR ACTIVE VSSOP DGS 10 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 (JZO, JZR) TS3A24157RSER ACTIVE UQFN RSE 10 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 JZO TS3A24157RSERG4 ACTIVE UQFN RSE 10 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 JZO (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of