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TS3USB221
SCDS220I – NOVEMBER 2006 – REVISED JANUARY 2016
TS3USB221 High-Speed USB 2.0 (480-Mbps) 1:2 Multiplexer – Demultiplexer
Switch With Single Enable
1 Features
3 Description
•
•
•
•
•
•
•
•
•
•
The TS3USB221 is a high-bandwidth switch specially
designed for the switching of high-speed USB 2.0
signals in handset and consumer applications, such
as cell phones, digital cameras, and notebooks with
hubs or controllers with limited USB I/Os. The wide
bandwidth (1.1 GHz) of this switch allows signals to
pass with minimum edge and phase distortion. The
device multiplexes differential outputs from a USB
host device to one of two corresponding outputs. The
switch is bidirectional and offers little or no
attenuation of the high-speed signals at the outputs.
The TS3USB221 is designed for low bit-to-bit skew
and high channel to channel noise isolation. The
TS3USB221 is also compatible with various
standards, such as high-speed USB 2.0 (480 Mbps).
1
VCC Operation from 2.3 V and 3.6 V
VI/O Accepts Signals up to 5.5 V
1.8-V Compatible Control-Pin Inputs
Low-Power Mode When OE Is Disabled (1 μA)
rON = 6 Ω Maximum
ΔrON = 0.2 Ω Typical
Cio(on) = 6 pF Maximum
Low Power Consumption (30 μA Maximum)
ESD > 2000-V Human-Body Model (HBM)
High Bandwidth (1.1 GHz Typical)
2 Applications
•
•
•
Routes Signals for USB 1.0, 1.1, and 2.0
Mobile Industry Processor Interface (MIPI™)
Signal Routing
MHL 1.0
Device Information(1)
PART NUMBER
TS3USB221
PACKAGE
BODY SIZE (NOM)
VSON (10)
3.00 mm × 3.00 mm
UQFN (10)
1.50 mm × 2.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Block Diagram
Simplified Schematic, Each FET Switch (SW)
D+
1D+
D−
1D−
A
2D+
B
VCC
2D−
Digital Control
Charge
Pump
S
OE
EN (see Note A)
A.
EN is the internal enable signal applied to
the switch.
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TS3USB221
SCDS220I – NOVEMBER 2006 – REVISED JANUARY 2016
www.ti.com
Table of Contents
1
2
3
4
5
6
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
4
4
4
4
5
10 Power Supply Recommendations ..................... 15
11 Layout................................................................... 15
6
12 Device and Documentation Support ................. 17
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions ......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Dynamic Electrical Characteristics, VCC = 3.3 V ±
10% ...........................................................................
6.7 Dynamic Electrical Characteristics, VCC = 2.5 V ±
10% ...........................................................................
6.8 Switching Characteristics, VCC = 3.3 V ± 10% ........
6.9 Switching Characteristics, VCC = 2.5 V ± 10% ........
6.10 Typical Characteristics ............................................
7
6
6
6
7
Parameter Measurement Information .................. 8
8
Detailed Description ............................................ 12
8.1
8.2
8.3
8.4
9
Overview .................................................................
Functional Block Diagram .......................................
Feature Description.................................................
Device Functional Modes........................................
12
12
12
12
Application and Implementation ........................ 13
9.1 Application Information............................................ 13
9.2 Typical Application ................................................. 13
11.1 Layout Guidelines ................................................. 15
11.2 Layout Example .................................................... 16
12.1
12.2
12.3
12.4
Documentation Support ........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
17
17
17
17
13 Mechanical, Packaging, and Orderable
Information ........................................................... 17
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision H (February 2015) to Revision I
•
Page
Changed VIH Max from 5.5 to VCC in Recommended Operating Conditions table ................................................................. 4
Changes from Revision G (September 2010) to Revision H
Page
•
Changed first bullet of the Features FROM: VCC Operation at 2.5 V and 3.3 V TO: VCC Operation at 2.3 V and 3.6 V ....... 1
•
Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device Functional
Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device
and Documentation Support section, and Mechanical, Packaging, and Orderable Information section .............................. 1
•
Removed the Ordering Information table ............................................................................................................................... 1
2
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SCDS220I – NOVEMBER 2006 – REVISED JANUARY 2016
5 Pin Configuration and Functions
DRC Package
10-Pin VSON
(Top View)
RSE Package
10-Pin UQFN
(Top View)
1D+
1
10
VCC
1D–
2
9
S
2D+
3
8
D+
2D–
4
7
D–
GND
5
6
OE
VCC
10
9
S
2
8
D+
2D+
3
7
D–
2D–
4
6
OE
1D+
1
1D–
5
GND
RSE Package
10-Pin UQFB
(Bottom View)
VCC
S
9
D+
10
1
1D+
8
2
1D–
D–
7
3
2D+
OE
6
4
2D–
5
GND
Pin Functions
PIN
NAME
NO.
I/O
1D+
1
I/O
1D–
2
I/O
2D+
3
I/O
2D–
4
I/O
GND
5
—
OE
6
I
D–
7
I/O
D+
8
I/O
S
9
I
VCC
10
—
DESCRIPTION
USB port 1
USB port 2
Ground
Bus-switch enable
Common USB port
Select input
Supply voltage
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
VCC
Supply voltage
MIN
MAX
UNIT
–0.5
4.6
V
–0.5
7
V
–0.5
7
V
–50
mA
VIN
Control input voltage
(2) (3)
VI/O
Switch I/O voltage (2)
(3) (4)
IIK
Control input clamp current
VIN < 0
II/OK
I/O port clamp current
VI/O < 0
–50
mA
II/O
ON-state switch current (5)
±120
mA
Continuous current through VCC or GND
±100
mA
150
°C
Tstg
(1)
(2)
(3)
(4)
(5)
Storage temperature
–65
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltages are with respect to ground, unless otherwise specified.
The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
VI and VO are used to denote specific conditions for VI/O.
II and IO are used to denote specific conditions for II/O.
6.2 ESD Ratings
V(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001
VALUE
UNIT
2000
V
6.3 Recommended Operating Conditions
(1)
See
.
VCC
Supply voltage
VIH
High-level control input voltage
VIL
Low-level control input voltage
VI/O
Data input/output voltage
TA
Operating free-air temperature
(1)
VCC = 2.3 V to 2.7 V
VCC = 2.7 V to 3.6 V
MIN
MAX
2.3
3.6
V
0.46 × VCC
VCC
V
0
0.25 × VCC
V
0
5.5
V
–40
85
°C
VCC = 2.3 V to 2.7 V
VCC = 2.7 V to 3.6 V
UNIT
All unused control inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report,
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.
6.4 Thermal Information
TS3USB221
THERMAL METRIC (1)
DRC (VSON)
RSE (UQFN)
10 PINS
10 PINS
RθJA
Junction-to-ambient thermal resistance
57.7
169.8
RθJC(top)
Junction-to-case (top) thermal resistance
87.7
84.7
RθJB
Junction-to-board thermal resistance
32.6
94.9
ψJT
Junction-to-top characterization parameter
8.2
5.7
ψJB
Junction-to-board characterization parameter
32.8
94.9
RθJC(bot)
Junction-to-case (bottom) thermal resistance
18.5
N/A
(1)
4
UNIT
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
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6.5 Electrical Characteristics
over operating free-air temperature range (unless otherwise noted) (1)
PARAMETER
VIK
Control
inputs
IIN
IOZ
(3)
TEST CONDITIONS
MIN
TYP (2)
MAX
UNIT
–1.8
V
VCC = 3.6 V, 2.7 V,
II = –18 mA
VCC = 3.6 V, 2.7 V, 0 V,
VIN = 0 V to 3.6 V
±1
μA
VCC = 3.6 V, 2.7 V,
VO = 0 V to 3.6 V, VI = 0 V,
VIN = VCC or GND,
Switch OFF
±1
μA
VI/O = 0 V to 3.6 V
±2
VI/O = 0 V to 2.7 V
±1
μA
IOFF
VCC = 0 V
ICC
VCC = 3.6 V, 2.7 V,
VIN = VCC or GND,
II/O = 0 V,
Switch ON or OFF
30
μA
ICC
(low
power
mode)
VCC = 3.6 V, 2.7 V,
VIN = VCC or GND
Switch disabled
(OE in high state)
1
μA
Control
inputs
One input at 1.8 V,
Other inputs at VCC or GND
VCC = 3.6 V
20
VCC = 2.7 V
0.5
Control
inputs
VCC = 3.3 V, 2.5 V,
VIN = 3.3 V or 0 V
Cio(OFF)
VCC = 3.3 V, 2.5 V,
VI/O = 3.3 V or 0
V,
Cio(ON)
VCC = 3.3 V, 2.5 V,
ΔICC
(4)
Cin
ron
(5)
VCC = 3 V, 2.3 V
Δron
VCC = 3 V, 2.3 V
ron(flat)
VCC = 3 V, 2.3 V
(1)
(2)
(3)
(4)
(5)
μA
1
2
pF
Switch OFF
3
4
pF
VI/O = 3.3 V or 0
V,
Switch ON
5
6
pF
VI = 0 V,
IO = 30 mA
6
VI = 2.4 V,
IO = –15 mA
6
VI = 0 V,
IO = 30 mA
0.2
VI = 1.7,
IO = –15 mA
0.2
VI = 0 V,
IO = 30 mA
1
VI = 1.7,
IO = –15 mA
1
Ω
Ω
Ω
VIN and IIN refer to control inputs. VI, VO, II, and IO refer to data pins.
All typical values are at VCC = 3.3 V (unless otherwise noted), TA = 25°C.
For I/O ports, the parameter IOZ includes the input leakage current.
This is the increase in supply current for each input that is at the specified TTL voltage level, rather than VCC or GND.
Measured by the voltage drop between the A and B terminals at the indicated current through the switch. ON-state resistance is
determined by the lower of the voltages of the two (A or B) terminals.
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6.6 Dynamic Electrical Characteristics, VCC = 3.3 V ± 10%
over operating range, TA = –40°C to 85°C, VCC = 3.3 V ± 10%, GND = 0 V
PARAMETER
TYP (1)
TEST CONDITIONS
UNIT
XTALK
Crosstalk
RL = 50 Ω, f = 250 MHz
–40
OIRR
OFF isolation
RL = 50 Ω, f = 250 MHz
–41
dB
BW
Bandwidth (–3 dB)
RL = 50 Ω
1.1
GHz
(1)
dB
For Maximum or Minimum conditions, use the appropriate value specified under Electrical Characteristics for the applicable device type.
6.7 Dynamic Electrical Characteristics, VCC = 2.5 V ± 10%
over operating range, TA = –40°C to 85°C, VCC = 2.5 V ± 10%, GND = 0 V
PARAMETER
TYP (1)
TEST CONDITIONS
UNIT
XTALK
Crosstalk
RL = 50 Ω, f = 250 MHz
–39
OIRR
OFF isolation
RL = 50 Ω, f = 250 MHz
–40
dB
BW
Bandwidth (–3 dB)
RL = 50 Ω
1.1
GHz
(1)
dB
For Maximum or Minimum conditions, use the appropriate value specified under Electrical Characteristics for the applicable device type.
6.8 Switching Characteristics, VCC = 3.3 V ± 10%
over operating range, TA = –40°C to 85°C, VCC = 3.3 V ± 10%, GND = 0 V
PARAMETER
tpd
Propagation delay
MIN
(2) (3)
Line enable time
tOFF
Line disable time
tSK(O)
Output skew between center port to any other port (2)
(1)
(2)
(3)
MAX
0.25
tON
tSK(P)
TYP (1)
ns
S to D, nD
30
OE to D, nD
17
S to D, nD
12
OE to D, nD
10
Skew between opposite transitions of the same output (tPHL – tPLH)
(2)
UNIT
ns
ns
0.1
0.2
ns
0.1
0.2
ns
For Maximum or Minimum conditions, use the appropriate value specified under Electrical Characteristics for the applicable device type.
Specified by design
The bus switch contributes no propagational delay other than the RC delay of the on resistance of the switch and the load capacitance.
The time constant for the switch alone is of the order of 0.25 ns for 10-pF load. This time constant adds very little propagational delay to
the system because it is much smaller than the rise/fall times of typical driving signals. Propagational delay of the bus switch, when used
in a system, is determined by the driving circuit on the driving side of the switch and its interactions with the load on the driven side.
6.9 Switching Characteristics, VCC = 2.5 V ± 10%
over operating range, TA = –40°C to 85°C, VCC = 2.5 V ± 10%, GND = 0 V
PARAMETER
tpd
Propagation delay
MIN
(2) (3)
TYP (1)
MAX
0.25
UNIT
ns
S to D, nD
50
OE to D, nD
32
S to D, nD
23
OE to D, nD
12
tON
Line enable time
tOFF
Line disable time
tSK(O)
Output skew between center port to any other port (2)
0.1
0.2
ns
tSK(P)
Skew between opposite transitions of the same output (tPHL – tPLH) (2)
0.1
0.2
ns
(1)
(2)
(3)
6
ns
ns
For Maximum or Minimum conditions, use the appropriate value specified under Electrical Characteristics for the applicable device type.
Specified by design
The bus switch contributes no propagational delay other than the RC delay of the on resistance of the switch and the load capacitance.
The time constant for the switch alone is of the order of 0.25 ns for 10-pF load. The time constraint adds very little propagational delay
to the system because it is much smaller than the rise and fall times of typical driving signals. Propagational delay of the bus switch,
when used in a system, is determined by the driving circuit on the driving side of the switch and its interactions with the load on the
driven side.
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6.10 Typical Characteristics
0
0
–1
VCC = 3.3 V
VCC = 2.5 V
–20
–40
Attenuation (dB)
Gain (dB)
–2
–3
–4
–60
–80
–5
VCC = 3.3 V
VCC = 2.5 V
–6
–100
–120
–7
100.0E+3
1.0E+6
10.0E+6
100.0E+6
1.0E+9
100.0E+3
10.0E+9
1.0E+6
10.0E+6
100.0E+6
1.0E+9
10.0E+9
Frequency (Hz)
Frequency (Hz)
Figure 2. OFF Isolation vs Frequency
Figure 1. Gain vs Frequency
0
3.5
3.4
–20
ron (Ω)
Attenuation (dB)
3.3
–40
–60
3.2
3.1
–80
3.0
–100
VCC = 3.3 V
VCC = 2.5 V
2.9
–120
100.0E+3
VCC = 3.0 V
VCC = 2.3 V
2.8
1.0E+6
10.0E+6
100.0E+6
1.0E+9
0.0
10.0E+9
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VIN (V)
Frequency (Hz)
Figure 4. ron vs VIN (IOUT = –15 mA)
Figure 3. Crosstalk vs Frequency
3.5
3.4
ron (Ω)
3.3
3.2
3.1
3.0
2.9
VCC = 3.0 V
VCC = 2.3 V
2.8
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VIN (V)
Figure 5. ron vs VIN (IOUT = –30 mA)
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7 Parameter Measurement Information
VCC
VOUT1 or VOUT2
1D or 2D
TEST
RL
CL
VCOM
tON
500 Ω
50 pF
V+
tOFF
500 Ω
50 pF
V+
D
VIN
CL(2)
1D or 2D
RL
S
VCTRL
CL(2)
Logic
Input(1)
1.8 V
Logic
Input
(VI)
RL
GND
50%
50%
0
tON
Switch
Output
(VOUT1 or VOUT2)
(1)
(2)
tOFF
90%
90%
VOH
VOL
All input pulses are supplied by generators having the following characteristics: PRR≤ 10 MHz, ZO = 50W, t r < 5 ns, t f < 5 ns.
CL includes probe and jig capacitance.
Figure 6. Turnon (tON) and Turnoff Time (tOFF)
VCC
Network Analyzer
Channel OFF: 1D to D
50 Ω
VOUT1 1D
VCTRL = VCC or GND
VIN
D
Source
Signal
50 Ω
2D
Network Analyzer Setup
Source Power = 0 dBm
(632-mV P-P at 50-Ω load)
VCTRL S
50 Ω
+
GND
DC Bias = 350 mV
Figure 7. OFF Isolation (OISO)
VCC
Network Analyzer
Channel ON: 1D to D
50 Ω
VOUT1 1D
Channel OFF: 2D to D
VIN
Source
Signal
VCTRL = VCC or GND
VOUT2 2D
50
VCTRL S
50 Ω
+
GND
Network Analyzer Setup
Source Power = 0 dBm
(632-mV P-P at 50-Ω load)
DC Bias = 350 mV
Figure 8. Crosstalk (XTALK)
8
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Parameter Measurement Information (continued)
VCC
Network Analyzer
50 Ω
VOUT1
1D
Channel ON: 1D to D
VIN
D
Source
Signal
VCTRL = VCC or GND
2D
Network Analyzer Setup
50 Ω
VCTRL
Source Power = 0 dBm
(632-mV P-P at 50-Ω load)
S
+
GND
DC Bias = 350 mV
Figure 9. Bandwidth (BW)
800 mV
50%
Input
50%
400 mV
tPLH
Output
tPHL
50%
50%
Figure 10. Propagation Delay
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Parameter Measurement Information (continued)
800 mV
50%
50%
Input
400 mV
tPLH
tPHL
VOH
50%
Output
VOL
tSK(P) = | tPHL – tPLH |
PULSE SKEW tSK(P)
800 mV
50%
50%
Input
400 mV
tPLH1
tPHL1
VOH
50%
50%
Output 1
VOL
tSK(O)
tSK(O)
VOH
50%
50%
Output 2
tPLH2
VOL
tPHL2
tSK(O) = | tPLH1 – tPLH2 | or | tPHL1 – tPHL2 |
OUTPUT SKEW tSK(P)
Figure 11. Skew Test
VCC
VOUT1 1D
D
+
VIN
Channel ON
VOUT2 2D
r on –
VCTRL
IIN
S
VIN
VOUT2 or VOUT1
Ω
IIN
VCTRL = VIH or VIL
+
GND
Figure 12. ON-State Resistance (ron)
10
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Parameter Measurement Information (continued)
VCC
VOUT1 1D
D
+
VOUT2 2D
VCTRL
VIN
+
S
OFF-State Leakage Current
Channel OFF
VCTRL = VIH or VIL
+
GND
Figure 13. OFF-State Leakage Current
VCC
VOUT1 1D
Capacitance
Meter
VBIAS
VBIAS = VCC or GND
VOUT2 2D
VCTRL = VCC or GND
VIN D
Capacitance is measured at 1D,
2D, D, and S inputs during ON
and OFF conditions.
VCTRL S
GND
Figure 14. Capacitance
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8 Detailed Description
8.1 Overview
The TS3USB221 device is a 2-channel SPDT switch specially designed for the switching of high-speed USB 2.0
signals in handset and consumer applications, such as cell phones, digital cameras, and notebooks with hubs or
controllers with limited USB I/Os. The wide bandwidth (1.1 GHz) of this switch allows signals to pass with
minimum edge and phase distortion. The device multiplexes differential outputs from a USB host device to one of
two corresponding outputs. The switch is bidirectional and offers little or no attenuation of the high-speed signals
at the outputs. The device also has a low power mode that reduces the power consumption to 1 μA for portable
applications with a battery or limited power budget.
The device is designed for low bit-to-bit skew and high channel-to-channel noise isolation, and is compatible with
various standards, such as high-speed USB 2.0 (480 Mbps).
The TS3USB221 device integrates ESD protection cells on all pins, is available in a tiny μQFN package (2 mm ×
1.5 mm) and is characterized over the free-air temperature range from –40°C to 85°C.
8.2 Functional Block Diagram
D+
1D+
D−
1D−
2D+
2D−
Digital Control
S
OE
8.3 Feature Description
8.3.1 Low Power Mode
The TS3USB221 has a low power mode that reduces the power consumption to 1 μA when the device is not in
use. The bus-switch enable pin OE must be supplied with a logic high signal to put the device in low power mode
and disable the switch.
8.4 Device Functional Modes
Table 1. Truth Table
12
S
OE
FUNCTION
X
H
Disconnect
L
L
D = 1D
H
L
D = 2D
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SCDS220I – NOVEMBER 2006 – REVISED JANUARY 2016
9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
There are many USB applications in which the USB hubs or controllers have a limited number of USB I/Os. The
TS3USB221 solution can effectively expand the limited USB I/Os by switching between multiple USB buses in
order to interface them to a single USB hub or controller. TS3USB221 can also be used to connect a single
controller to two USB connectors.
9.2 Typical Application
3.3 V
0.1 μF
0.1 μF
VCC
System
Controller
Switch
Control Logic
TS3USB221
2-channel
SPDT
S
OE
1D+
1D-
USB Port 1
2D+
2D-
USB Port 2
D+
USB
Controller
D-
GND
Figure 15. Simplified Schematic
9.2.1 Design Requirements
Design requirements of the USB 1.0, 1.1, and 2.0 standards should be followed.
TI recommends that the digital control pins S and OE be pulled up to VCC or down to GND to avoid undesired
switch positions that could result from the floating pin.
9.2.2 Detailed Design Procedure
The TS3USB221 may be properly operated without any external components. However, it is recommended that
unused pins be connected to ground through a 50-Ω resistor to prevent signal reflections back into the device.
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Typical Application (continued)
0.5
0.5
0.4
0.4
0.3
0.3
Differential Signal (V)
Differential Signal (V)
9.2.3 Application Curves
0.2
0.1
0.0
–0.1
–0.2
0.2
0.1
0.0
–0.1
–0.2
–0.3
–0.3
–0.4
–0.4
–0.5
–0.5
0.0
0.2
0.4
0.5
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.0
0.2
0.4
–9
0.5
0.8
1.0
1.2
1.4
1.6
1.8
2.0
–9
Time (X 10 ) (s)
Time (X 10 ) (s)
Figure 16. Eye Pattern: 480-Mbps USB Signal With No
Switch (Through Path)
Figure 17. Eye Pattern: 480-Mbps USB Signal With Switch
NC Path
0.5
0.4
Differential Signal (V)
0.3
0.2
0.1
0.0
–0.1
–0.2
–0.3
–0.4
–0.5
0.0
0.2
0.4
0.5
0.8
1.0
1.2
1.4
1.6
1.8
2.0
–9
Time (X 10 ) (s)
Figure 18. Eye Pattern: 480-Mbps USB Signal With Switch NO Path
14
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SCDS220I – NOVEMBER 2006 – REVISED JANUARY 2016
10 Power Supply Recommendations
Power to the device is supplied through the VCC pin and should follow the USB 1.0, 1.1, and 2.0 standards. TI
recommends placing a bypass capacitor as close as possible to the supply pin VCC to help smooth out lower
frequency noise to provide better load regulation across the frequency spectrum.
11 Layout
11.1 Layout Guidelines
Place supply bypass capacitors as close to VCC pin as possible. Avoid placing the bypass caps near the D+/D–
traces.
The high-speed D+/D– traces should always be matched lengths and must be no more than 4 inches, otherwise
the eye diagram performance may be degraded. A high-speed USB connection is made through a shielded,
twisted pair cable with a differential characteristic impedance. In the layout, the impedance of D+ and D– traces
should match the cable characteristic differential impedance for optimal performance.
Route the high-speed USB signals using a minimum of vias and corners which will reduce signal reflections and
impedance changes. When a via must be used, increase the clearance size around it to minimize its
capacitance. Each via introduces discontinuities in the signal’s transmission line and increases the chance of
picking up interference from the other layers of the board. Be careful when designing test points on twisted pair
lines; through-hole pins are not recommended.
When it becomes necessary to turn 90°, use two 45° turns or an arc instead of making a single 90° turn. This
reduces reflections on the signal traces by minimizing impedance discontinuities.
Do not route USB traces under or near crystals, oscillators, clock signal generators, switching regulators,
mounting holes, magnetic devices or IC’s that use or duplicate clock signals.
Avoid stubs on the high-speed USB signals because they cause signal reflections. If a stub is unavoidable, then
the stub should be less than 200 mm.
Route all high-speed USB signal traces over continuous planes (VCC or GND), with no interruptions.
Avoid crossing over anti-etch, commonly found with plane splits.
A printed circuit board with at least four layers is recommended because of high frequencies associated with the
USB; two signal layers separated by a ground and power layer as shown in Figure 19.
Signal 1
GND Plane
Power Plane
Signal 2
Figure 19. Four-Layer Board Stack-Up
The majority of signal traces should run on a single layer, preferably Signal 1. Immediately next to this layer
should be the GND plane, which is solid with no cuts. Avoid running signal traces across a split in the ground or
power plane. When running across split planes is unavoidable, sufficient decoupling must be used. Minimizing
the number of signal vias reduces EMI by reducing inductance at high frequencies. For more information on
layout guidelines, see High Speed Layout Guidelines (SCAA082) and USB 2.0 Board Design and Layout
Guidelines (SPRAAR7).
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11.2 Layout Example
LEGEND
VIA to Power Plane
Polygonal Copper Pour
VIA to GND Plane
Bypass Capacitor
V+
To Microcontroller
10
1 1D+
VCC
S
9
2 1D-
D+
8
3 2D+
D-
7
USB Port 1
To USB Host
USB Port 2
4 2D-
OE 6
GND
5
To Microcontroller
Figure 20. Package Layout Diagram
16
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TS3USB221
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SCDS220I – NOVEMBER 2006 – REVISED JANUARY 2016
12 Device and Documentation Support
12.1 Documentation Support
12.1.1 Related Documentation
For related documentation, see the following:
• High Speed Layout Guidelines, SCAA082
• USB 2.0 Board Design and Layout Guidelines, SPRAAR7
12.2 Trademarks
MIPI is a trademark of Mobile Industry Processor Interface Alliance.
All other trademarks are the property of their respective owners.
12.3 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.4 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
www.ti.com
15-Apr-2017
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
SN080104RSER
ACTIVE
UQFN
RSE
10
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 85
(L57 ~ L5O ~ L5R ~
L5V)
TS3USB221DRCR
ACTIVE
VSON
DRC
10
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU |
CU NIPDAUAG
Level-2-260C-1 YEAR
-40 to 85
ZWG
TS3USB221DRCRG4
ACTIVE
VSON
DRC
10
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 85
ZWG
TS3USB221RSER
ACTIVE
UQFN
RSE
10
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU |
CU NIPDAUAG
Level-1-260C-UNLIM
-40 to 85
(L57 ~ L5O ~ L5R ~
L5V)
TS3USB221RSERG4
ACTIVE
UQFN
RSE
10
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 85
(L57 ~ L5O ~ L5R ~
L5V)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
15-Apr-2017
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
3-Aug-2017
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
TS3USB221DRCR
VSON
DRC
10
3000
330.0
12.4
3.3
3.3
1.0
8.0
12.0
Q2
TS3USB221RSER
UQFN
RSE
10
3000
180.0
9.5
1.7
2.2
0.75
4.0
8.0
Q1
TS3USB221RSER
UQFN
RSE
10
3000
180.0
9.5
1.7
2.3
0.75
4.0
8.0
Q1
TS3USB221RSER
UQFN
RSE
10
3000
180.0
8.4
1.68
2.13
0.76
4.0
8.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
3-Aug-2017
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
TS3USB221DRCR
VSON
DRC
10
3000
370.0
355.0
55.0
TS3USB221RSER
UQFN
RSE
10
3000
189.0
185.0
36.0
TS3USB221RSER
UQFN
RSE
10
3000
184.0
184.0
19.0
TS3USB221RSER
UQFN
RSE
10
3000
202.0
201.0
28.0
Pack Materials-Page 2
www.ti.com
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