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TS3USB3200RSVR

TS3USB3200RSVR

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    UQFN16_2.6X1.8MM

  • 描述:

    USB Switch IC 2 Channel 16-UQFN (2.6x1.8)

  • 数据手册
  • 价格&库存
TS3USB3200RSVR 数据手册
Product Folder Sample & Buy Technical Documents Support & Community Tools & Software TS3USB3200 SCDS333B – JUNE 2012 – REVISED JULY 2016 TS3USB3200 SPDT USB 2.0 High-Speed (480 Mbps) and Mobile High-Definition Link (MHL) or Mobility Display Port (MyDP) Switch With additional SPDT ID Select Switch and Flexible Power Control 1 Features 2 Applications • • • • • • 1 • • • • • VCC Range: 2.7 V to 4.3 V Mobile High-Definition Link (MHL) or Mobility Display Port (MyDP) Switch – Bandwidth (–3 dB): 5.5 GHz – Ron (Typical): 5.7 Ω – Con (Typical): 2.5 pF USB Switch – Bandwidth (–3 dB): 5.5 GHz – Ron (Typical): 4.6 Ω – Con (Typical): 2.5 pF Current Consumption: 40 µA Typical Special Features – Flexible Power Control: Device Can be Powered by VBUS Without VCC or by VCC Alone – IOFF Protection Prevents Current Leakage in Powered-Down State (VCC and VBUS= 0 V) – 1.8-V Compatible Control Inputs (SEL1, SEL2, and PSEL) – Overvoltage Tolerance (OVT) on All I/O Pins up to 5.5 V Without External Components ESD Performance: – 3.5-kV Human-Body Model (A114B, Class II) – 1-kV Charged Device Model (C101) Package: – 16-Pin UQFN Package (2.6 × 1.8 mm, 0.4-mm Pitch) 3 Description The TS3USB3200 is a differential single-pole, double throw (SPDT) multiplexer that includes a high-speed Mobile High-Definition Link (MHL) or Mobility Display Port (MyDP) switch and a USB 2.0 High-Speed (480 Mbps) switch in the same package. Additionally included is a single-pole, double throw (SPDT) USB/MHL or MyDP ID switch for easy information control. These configurations allow the system designer to use a common USB or Mico-USB connector for both MHL/MyDP video signals and USB data. The TS3USB3200 has a VCC range of 2.7 V to 4.3 V and also has the option to be powered by VBUS without VCC. The device supports a overvoltage tolerance (OVT) feature which allows the I/O pins to withstand overvoltage conditions (up to 5.5 V). The power-off protection feature forces all I/O pins to be in high impedance mode when power is not present. This allows full isolation of the signals lines without excessive leakage current. The select pins of TS3USB3200 are compatible with 1.8-V control voltage, allowing them to be directly interfaced with the General Purpose I/O (GPIO) from a mobile processor. The TS3USB3200 comes with a small 16-pin UQFN package (2.6 mm × 1.8 mm in size), which makes it a perfect candidate for mobile applications. Switch Diagram USB+ D+ Device Information(1) MHL+ USB- D- MHLID_MHL ID_COM ID_USB SEL1 Control Logic SEL2 VBUS Switch Power PSEL VCC USB 2.0 Applications Mobile High-Definition Link (MHL) Applications Mobility Display Port (MyDP) Applications Mobile Phones PART NUMBER TS3USB3200 PACKAGE UQFN (16) BODY SIZE (NOM) 2.60 mm × 1.80 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. Copyright © 2016, Texas Instruments Incorporated 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. TS3USB3200 SCDS333B – JUNE 2012 – REVISED JULY 2016 www.ti.com Table of Contents 1 2 3 4 5 6 7 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 4 6.1 6.2 6.3 6.4 6.5 6.6 6.7 4 4 4 4 5 5 7 Absolute Maximum Ratings ...................................... ESD Ratings.............................................................. Recommended Operating Conditions....................... Thermal Information .................................................. Electrical Characteristics........................................... Dynamic Characteristics ........................................... Typical Characteristics .............................................. Detailed Description .............................................. 9 7.1 Overview ................................................................... 9 7.2 Functional Block Diagram ......................................... 9 7.3 Feature Description................................................... 9 7.4 Device Functional Modes........................................ 10 8 Application and Implementation ........................ 11 8.1 Application Information............................................ 11 8.2 Typical Applications ................................................ 11 9 Power Supply Recommendations...................... 13 10 Layout................................................................... 14 10.1 Layout Guidelines ................................................. 14 10.2 Layout Example .................................................... 15 11 Device and Documentation Support ................. 16 11.1 11.2 11.3 11.4 11.5 Receiving Notification of Documentation Updates Community Resources.......................................... Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 16 16 16 16 16 12 Mechanical, Packaging, and Orderable Information ........................................................... 16 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision A (July 2013) to Revision B Page • Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section. ................................................................................................. 1 • Removed Ordering Information table, see POA at the end of the data sheet ...................................................................... 1 • Changed Thermal Information table ...................................................................................................................................... 4 Changes from Original (June 2012) to Revision A Page • Added Mobility Display Port (MyDP) option functionality. ...................................................................................................... 1 • Changed VI/O MIN value from –0.3 to –0.5............................................................................................................................. 4 • Updated Typical Application diagrams. ................................................................................................................................ 11 2 Submit Documentation Feedback Copyright © 2012–2016, Texas Instruments Incorporated Product Folder Links: TS3USB3200 TS3USB3200 www.ti.com SCDS333B – JUNE 2012 – REVISED JULY 2016 5 Pin Configuration and Functions ID_COM ID_MHL 14 13 MHL+ MHL– 4 9 SEL2 GND SEL1 8 11 10 7 2 3 USB+ PSEL VCC VBUS D+ D– 15 ID_USB 6 12 5 1 USB– GND 16 RSV Package 16-Pin UQFN Top View Not to scale Pin Functions PIN NO. NAME TYPE DESCRIPTION 1 GND Ground Ground 2 D+ I/O Data Signal Path (Differential +) 3 D– I/O Data Signal Path (Differential –) 4 PSEL Input Power Source Select Line 5 SEL1 Input Control Input Select Line 1 6 USB– I/O USB Data Signal Path (Differential –) 7 USB+ I/O USB Data Signal Path (Differential +) 8 GND Ground 9 SEL2 Input 10 MHL– I/O MHL Data Signal Path (Differential–) 11 MHL+ I/O MHL Data Signal Path (Differential +) 12 ID_USB I/O ID Signal Path for USB 13 ID_MHL I/O ID Signal Path for MHL 14 ID_COM I/O ID Common Signal Path 15 VBUS Power Alternative Device Power 16 VCC Power Power supply Ground Control Input Select Line 2 Submit Documentation Feedback Copyright © 2012–2016, Texas Instruments Incorporated Product Folder Links: TS3USB3200 3 TS3USB3200 SCDS333B – JUNE 2012 – REVISED JULY 2016 www.ti.com 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) (2) Supply voltage (3) VCC ,VBUS (3) VI/O Input/Output DC voltage IK Input/Output port diode current VI Digital input voltage range (SEL1, SEL2, PSEL) VI/O < 0 (3) MIN MAX UNIT –0.3 5.5 V –0.5 5.5 Digital logic input clamp current ICC Continuous current through VCC IGND Continuous current through GND –100 Tstg Storage temperature –65 (2) (3) mA –0.3 IIK (1) V –50 VI < 0 5.5 V –50 mA 100 mA mA 150 °C Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum. All voltages are with respect to ground, unless otherwise specified. 6.2 ESD Ratings VALUE V(ESD) (1) (2) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) ±3500 Charged-device model (CDM), per JEDEC specification JESD22-C101 (2) ±1000 UNIT V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.3 Recommended Operating Conditions MIN MAX VCC Supply voltage 2.7 4.3 V VBUS VBUS Supply voltage 4.3 5.5 V VI/O VI/O Analog voltage for USB and ID signal path 0 3.6 V 1.6 3.4 V 0 VCC V (USB) UNIT (ID) VI/O (MHL) Analog voltage for MHL signal path VI Digital input voltage (SEL1, SEL2, PSEL) TRAMP (VCC) Power supply ramp time requirement (VCC) 100 1000 μs/V TRAMP (VBUS) Power supply ramp time requirement (VBUS) 100 1000 μs/V TA Operating free-air temperature –40 85 ºC 6.4 Thermal Information TS3USB3200 THERMAL METRIC (1) RSV (UQFN) UNIT 16 PINS RθJA Junction-to-ambient thermal resistance (2) 109.1 °C/W RθJC(top) Junction-to-case (top) thermal resistance 36 °C/W RθJB Junction-to-board thermal resistance 46.4 °C/W ψJT Junction-to-top characterization parameter 1 °C/W ψJB Junction-to-board characterization parameter 49.7 °C/W (1) (2) 4 For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. The package thermal impedance is calculated in accordance with JESD 51-7. Submit Documentation Feedback Copyright © 2012–2016, Texas Instruments Incorporated Product Folder Links: TS3USB3200 TS3USB3200 www.ti.com SCDS333B – JUNE 2012 – REVISED JULY 2016 6.5 Electrical Characteristics TA = –40°C to 85°C, Typical values are at VCC = 3.3 V, TA = 25°C, (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT MHL SWITCH RON ON-state resistance VCC = 2.7 V VI/O = 1.6 V, ION = –8 mA 5.7 Ω ΔRON ON-state resistance match between + and – paths VCC = 2.7 V VI/O = 1.6 V, ION = –8 mA 0.4 Ω RON ON-state resistance flatness VCC = 2.7 V VI/O = 1.6 V to 3.4 V, ION = –8 mA 1 Ω (FLAT) IOZ OFF leakage current VCC = 4.3 V Switch OFF, VMHL+/MHL– = 1.6 V to 3.4 V, VD+/D– = 0 V IOFF Power-off leakage current VCC = 0 V Switch ON or OFF, VMHL+/MHL– = 1.6 V to 3.4 V, VD+/D– = NC ION ON leakage current VCC = 4.3 V Switch ON, VMHL+/MHL– = 1.6 V to 3.4 V, VD+/D– = NC RON ON-state resistance VCC = 2.7 V VI/O = 0.4 V, ION = –8 mA 4.6 Ω ΔRON ON-state resistance match between + and – paths VCC = 2.7 V VI/O = 0.4 V, ION = –8 mA 0.4 Ω RON ON-state resistance flatness VCC = 2.7 V VI/O = 0 V to 0.4 V, ION = –8 mA 1 Ω –2 2 µA –10 10 µA –2 2 µA USB SWITCH (FLAT) IOZ OFF leakage current VCC = 4.3 V Switch OFF, VUSB+/USB– = 0 V to 4.3 V, VD+/D– = 0 V IOFF Power-off leakage current VCC = 0 V Switch ON or OFF, VUSB+/USB– = 0 V to 4.3 V, VD+/D– = NC ION ON leakage current VCC = 4.3 V Switch ON, VUSB+/USB– = 0 V to 4.3 V, VD+/D– = NC RON ON-state resistance VCC = 2.7 V VI/O = 3.3 V, ION = –8 mA 6.5 Ω ΔRON ON-state resistance match between + and – paths VCC = 2.7 V VI/O = 3.3 V, ION = –8 mA 0.4 Ω IOZ OFF leakage current VCC = 4.3 V Switch OFF, VID_MHL/ID_USB = 0 V to 4.3 V, VID_COM = 0 V –1 1 µA IOFF Power-off leakage current VCC = 0 V Switch ON or OFF, VID_MHL/ID_USB = 0 V to 4.3 V, VID_COM = NC –10 10 µA ION ON leakage current VCC = 4.3 V Switch ON, VID_MHL/ID_USB = 0 V to 4.3 V, VID_COM = 0 V –1 1 µA –2 2 µA –10 10 µA –2 2 µA ID SWITCH DIGITAL CONTROL INPUTS (SEL1, SEL2, PSEL) VIH Input logic high VCC = 2.7 V to 4.3 V VIL Input logic low VCC = 2.7 V to 4.3 V 1.3 IIN Input leakage current VCC = 4.3 V, VI/O = 0 V to 4.3 V, VIN = 0 V to 2 V V –10 0.6 V 10 μA 6.6 Dynamic Characteristics TA = –40°C to 85°C, Typical values are at VCC = 3.3 V, TA = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT MHL (1)/USB/ ID SWITCH tpd Propagation Delay RL = 50 Ω, CL = 5 pF VCC = 2.7 V to 4.3 V tON Turnon time RL = 50 Ω, CL = 5 pF VCC = 2.7 V to 4.3 V 400 ns tOFF Turnoff time RL = 50 Ω, CL = 5 pF VCC = 2.7 V to 4.3 V 400 ns tSK(P) Skew of opposite transitions of same VCC = 2.7 V or 3.3V output VCC = 2.7 V to 4.3 V 0.1 0.2 ns CON(MHL) MHL path ON capacitance VCC = 3.3 V, VI/O = 0 or 3.3 V, f = 240 MHz Switch ON 1.6 pF CON(USB) USB path ON capacitance VCC = 3.3 V, VI/O = 0 or 3.3 V, f = 240 MHz Switch ON 1.4 pF COFF(MHL) MHL path OFF capacitance VCC = 3.3 V, VI/O = 0 or 3.3 V, f = 240 MHz Switch OFF 1.4 pF COFF(USB) USB path OFF capacitance VCC = 3.3 V, VI/O = 0 or 3.3 V, f = 240 MHz Switch OFF 1.6 pF CI Digital input capacitance VCC = 3.3 V, VI = 0 or 2V 2.2 pF (1) 0.1 ns Specified by Design Submit Documentation Feedback Copyright © 2012–2016, Texas Instruments Incorporated Product Folder Links: TS3USB3200 5 TS3USB3200 SCDS333B – JUNE 2012 – REVISED JULY 2016 www.ti.com Dynamic Characteristics (continued) TA = –40°C to 85°C, Typical values are at VCC = 3.3 V, TA = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT OISO OFF Isolation VCC = 2.7 V to 4.3 V, RL = 50 Ω, f = 240 MHz XTALK Crosstalk VCC = 2.7 V to 4.3 V, RL = 50 Ω, f = 240 MHz Switch ON –37 dB BW(MHL) MHL path –3-dB bandwidth VCC = 2.7 V to 4.3 V, RL = 50 Ω Switch ON 5.5 GHz BW(USB) USB path –3-dB bandwidth VCC = 2.7 V to 4.3 V, RL = 50 Ω Switch ON 5.5 GHz BW(ID) ID path –3-dB bandwidth VCC = 2.7 V to 4.3 V, RL = 50 Ω Switch ON 4 GHz Switch OFF –37 dB SUPPLY VBUS VBUS Power supply voltage 4.3 5.5 VCC Power supply voltage 2.7 4.3 V ICC Positive supply current VCC = 4.3 V, VIN = VCC or GND, VI/O = 0 V Switch ON or OFF 70 µA Positive supply current (VBUS mode) VCC = 0 V, VBUS = 5.5 V, VIN = VCC or GND, VI/O = 0 V Switch ON or OFF 50 µA ICC, 6 VBUS Submit Documentation Feedback 40 V Copyright © 2012–2016, Texas Instruments Incorporated Product Folder Links: TS3USB3200 TS3USB3200 www.ti.com SCDS333B – JUNE 2012 – REVISED JULY 2016 6.7 Typical Characteristics 6 8 VCC = 2.7 V Ion = 8 mA 7.5 VCC = 2.7 V Ion = 8 mA 5.5 7 5 RON USB (Ω) RON ID PATH (Ω) 6.5 6 5.5 5 4.5 4 3.5 4.5 3 4 2.5 3.5 3 0 0.5 1 1.5 Input Voltage (V) 2 2 0 0.5 Figure 1. ON-Resistance vs VI for MHL Switch 1 1.5 Input Voltage (V) G005 2 G006 Figure 2. ON-Resistance vs VI for USB Switch 8 VCC = 2.7 V Ion = 8 mA RON ID PATH (Ω) 7 6 5 4 3 1.8 2.3 2.8 3.3 Input Voltage (V) 3.8 G007 Figure 3. ON-Resistance vs VI for ID Switch Figure 4. Gain vs Frequency for MHL Switch Figure 5. Gain vs Frequency for USB Switch Figure 6. Off Isolation vs Frequency for MHL Path Submit Documentation Feedback Copyright © 2012–2016, Texas Instruments Incorporated Product Folder Links: TS3USB3200 7 TS3USB3200 SCDS333B – JUNE 2012 – REVISED JULY 2016 www.ti.com Typical Characteristics (continued) Figure 7. Off Isolation vs Frequency for USB Path Figure 8. Crosstalk vs Frequency for MHL Path Figure 9. Crosstalk vs Frequency for USB Path 8 Submit Documentation Feedback Copyright © 2012–2016, Texas Instruments Incorporated Product Folder Links: TS3USB3200 TS3USB3200 www.ti.com SCDS333B – JUNE 2012 – REVISED JULY 2016 7 Detailed Description 7.1 Overview The TS3USB3200 supports high-speed Mobile High-Definition Link (MHL) or Mobility Display Port (MyDP) switching, as well as USB 2.0 High-Speed (480 Mbps) switching in the same package. An additional integrated ID switch is also included to support USB/MHL or MyDP ID for easy information control. These configurations allow the system designer to use a common USB or Mico-USB connector to support both MHL/MyDP video signals and USB data. 7.2 Functional Block Diagram USB+ D+ MHL+ USB- D- MHLID_MHL ID_COM ID_USB SEL1 Control Logic SEL2 VBUS Switch Power PSEL VCC Copyright © 2016, Texas Instruments Incorporated 7.3 Feature Description 7.3.1 Flexible Power Control Device can be powered by VBUS or by VCC. This allows the device to run off a 4.3-V battery voltage or 5 V from an external USB device. If both a battery and external USB device are supplying voltage on the VCC and VBUS pins the PSEL can be used to select which power supply is used to save battery power. 7.3.2 IOFF Protection Prevents Current Leakage in Powered Down State (VCC and VBUS= 0 V) When there is no power supplied to the IC, all of the I/O signal paths are placed in a high impedance state, which isolates the data paths when they are not being used. 7.3.3 1.8-V Compatible Control Inputs (SEL1, SEL2, and PSEL) The TS3USB3200 logic control input pins can operate with 1.8-V logic since the VIH minimum for the SEL1, SEL2, and PSEL is 1.3 V. Submit Documentation Feedback Copyright © 2012–2016, Texas Instruments Incorporated Product Folder Links: TS3USB3200 9 TS3USB3200 SCDS333B – JUNE 2012 – REVISED JULY 2016 www.ti.com 7.4 Device Functional Modes The TS3USB32000 device can select which power supply pin VCC or VBUS will power the device when voltages are present on both pins. Table 1. Function Table (Power Source) (1) VCC VBUS PSEL (1) POWER SOURCE L L X No Power. All I/O in High-Z L H X VBUS H L X VCC H H L VCC H H H VBUS The PSEL pin has 6-MΩ weak pulldown resistor to GND to make its default value to be LOW. Table 2. Function Table (Signal and ID Select) SEL1 (1) 10 (1) SEL2 (1) CONNECTION High-Z L L D+/D– to USB+/USB–, ID_COM to ID_USB MHL+/MHL–, ID_MHL L H D+/D– to USB+/USB–, ID_COM to ID_MHL MHL+/MHL–, ID_USB H L D+/D– to MHL+/MHL–, ID_COM to ID_USB USB+/USB–, ID_MHL H H D+/D– to MHL+/MHL–, ID_COM to ID_MHL USB+/USB–, ID_USB The SEL1 and SEL2 pins have 6-MΩ weak pulldown resistor to GND to make their default value to be LOW. Submit Documentation Feedback Copyright © 2012–2016, Texas Instruments Incorporated Product Folder Links: TS3USB3200 TS3USB3200 www.ti.com SCDS333B – JUNE 2012 – REVISED JULY 2016 8 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 8.1 Application Information For Mobility Display Port Applications (MyDP) the signal voltage must be biased to ensure that the signal never exceeds the Recommended Operating Conditions for the TS3USB3200. Namely the VI/O must never operate outside the range of 0 V to 3.6 V. The control pins (SEL1 and SEL2) have built-in 6-MΩ pulldown resistors to ensure the USB paths are enabled for TS3USB3200 and allow connectivity to the TSU5611 USB accessory switch. 8.2 Typical Applications 8.2.1 TS3USB3200 Configured to be Powered by VBUS Through the MicroUSB Connector During manufacturing test when battery power is not available, the TS3USB3200 can be configured, as shown in Figure 10, to be powered by VBUS through the microUSB connector. To Battery Charger VBAT 100Ω VBUS VCC VBUS VBUS USB+ DP D+ USB- DM ID_USB ID DID GND D+ D- VBAT Baseband or Application Processor USB_DM USB_DP UART_TX ID_COM GND UART_RX SDA SCL INT MicroUSB Connector TSU6111A SEL1 SEL2 MHL+ MHL+/MyDP+ PSEL MHL- MHL-/MyDP- ID_MHL HDMI CBUS/ID HDMI to MHL/MyDP Bridge TS3USB3200 Copyright © 2016, Texas Instruments Incorporated Figure 10. Typical Application Schematic Powered by VBUS 8.2.1.1 Design Requirements Design requirements of the MHL and USB 1.0,1.1, and 2.0 standards must be followed. The TS3USB3200 has internal 6-MΩ pulldown resistors on SEL and OE, so no external resistors are required on the logic pins. The internal pulldown resistor on SEL ensures the USB channel is selected by default. The internal pulldown resistor on OE enables the switch when power is applied to VCC. Submit Documentation Feedback Copyright © 2012–2016, Texas Instruments Incorporated Product Folder Links: TS3USB3200 11 TS3USB3200 SCDS333B – JUNE 2012 – REVISED JULY 2016 www.ti.com Typical Applications (continued) 8.2.1.2 Detailed Design Procedure The TS3USB3200 can be properly operated without any external components. However, TI recommends that unused pins must be connected to ground through a 50-Ω resistor to prevent signal reflections back into the device. 8.2.1.3 Application Curves 12 Figure 11. 480-Mbps USB 2.0 Eye Pattern With No Device Figure 12. 480-Mbps USB 2.0 Eye Pattern for USB Switch Figure 13. Eye Pattern: 0.7-Gbps MHL Eye Pattern for With No Device Figure 14. Eye Pattern: 0.7-Gbps MHL Eye Pattern for MHL Switch Figure 15. Eye Pattern: 2.2-Gbps MHL Eye Pattern for With No Device Figure 16. Eye Pattern: 2.2-Gbps MHL Eye Pattern for MHL Switch Submit Documentation Feedback Copyright © 2012–2016, Texas Instruments Incorporated Product Folder Links: TS3USB3200 TS3USB3200 www.ti.com SCDS333B – JUNE 2012 – REVISED JULY 2016 Typical Applications (continued) Figure 17. Eye Pattern: 3-Gbps MHL Eye Pattern for With No Device Figure 18. Eye Pattern: 3-Gbps MHL Eye Pattern for MHL Switch 8.2.2 TS3USB3200 Powered by Mobile Device’s Standalone Battery The TS3USB3200 can also be powered by the mobile device’s standalone battery. Figure 19 shows a typical implementation. The VBUS pin of the TS3USB3200 can simply be grounded under such conditions. To Battery Charger VBAT VBUS VCC VBUS VBUS USB+ DP D+ USB- DM ID_USB ID DID GND D+ D- VBAT Baseband or Application Processor USB_DM USB_DP UART_TX ID_COM GND UART_RX SDA SCL INT MicroUSB Connector TSU6111A SEL1 SEL2 MHL+ MHL+/MyDP+ PSEL MHL- MHL-/MyDP- ID_MHL HDMI CBUS/ID HDMI to MHL/MyDP Bridge TS3USB3200 Copyright © 2016, Texas Instruments Incorporated Figure 19. Typical Application Schematic Powered by Mobile Devices 8.2.2.1 Design Requirements The TS3USB3200 can be properly operated without any external components. However, TI recommends that unused pins must be connected to ground through a 50-Ω resistor to prevent signal reflections back into the device. 8.2.2.2 Detailed Design Procedure The VBUS pin of the TS3USB3200 can simply be grounded under such conditions. 9 Power Supply Recommendations Power to the device is supplied through the VCC pin and must follow the USB 1.0, 1.1, and 2.0 standards. TI recommends placing a bypass capacitor as close to the supply pin VCC as possible to help smooth out lower frequency noise to provide better load regulation across the frequency spectrum. Submit Documentation Feedback Copyright © 2012–2016, Texas Instruments Incorporated Product Folder Links: TS3USB3200 13 TS3USB3200 SCDS333B – JUNE 2012 – REVISED JULY 2016 www.ti.com 10 Layout 10.1 Layout Guidelines Place supply bypass capacitors as close to VCC pin as possible and avoid placing the bypass capacitors near the D+/D– traces. The high-speed D+/D- must match and be no more than 4 inches long; otherwise, the eye diagram performance may be degraded. A high-speed USB connection is made through a shielded, twisted pair cable with a differential characteristic impedance. In layout, the impedance of D+ and D– traces must match the cable characteristic differential impedance for optimal performance. Route the high-speed USB signals using a minimum of vias and corners which reduces signal reflections and impedance changes. When a via must be used, increase the clearance size around it to minimize its capacitance. Each via introduces discontinuities in the signal’s transmission line and increases the chance of picking up interference from the other layers of the board. Be careful when designing test points on twisted pair lines; through-hole pins are not recommended. When it becomes necessary to turn 90°, use two 45° turns or an arc instead of making a single 90° turn. This reduces reflections on the signal traces by minimizing impedance discontinuities. Do not route USB traces under or near crystals, oscillators, clock signal generators, switching regulators, mounting holes, magnetic devices, or ICs that use or duplicate clock signals. Avoid stubs on the high-speed USB signals because they cause signal reflections. If a stub is unavoidable, then the stub must be less than 200 mm. Route all high-speed USB signal traces over continuous GND planes, with no interruptions. Avoid crossing over anti-etch, commonly found with plane splits. Due to high frequencies associated with the USB, a printed-circuit board with at least four layers is recommended; two signal layers separated by a ground and power layer as shown in Figure 20. Signal 1 GND Plane Power Plane Signal 2 Figure 20. Four-Layer Board Stack-Up The majority of signal traces must run on a single layer, preferably Signal 1. Immediately next to this layer should be the GND plane, which is solid with no cuts. Avoid running signal traces across a split in the ground or power plane. When running across split planes is unavoidable, sufficient decoupling must be used. Minimizing the number of signal vias reduces EMI by reducing inductance at high frequencies. 14 Submit Documentation Feedback Copyright © 2012–2016, Texas Instruments Incorporated Product Folder Links: TS3USB3200 TS3USB3200 www.ti.com SCDS333B – JUNE 2012 – REVISED JULY 2016 10.2 Layout Example 0603 Cap High Speed Bus GND D+ SEL1 D- PSEL To System Controller High Speed Bus To System Controller = VIA to GND Plane VCC High Speed Bus USB- VBUS USB+ ID_CO M GND ID_MH L High Speed Bus To device ID_BU S To System MHL- High Speed Bus SEL2 High Speed Bus To System Controller MHL+ To System Figure 21. TS3USB3200 Layout Example Submit Documentation Feedback Copyright © 2012–2016, Texas Instruments Incorporated Product Folder Links: TS3USB3200 15 TS3USB3200 SCDS333B – JUNE 2012 – REVISED JULY 2016 www.ti.com 11 Device and Documentation Support 11.1 Receiving Notification of Documentation Updates To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document. 11.2 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 11.3 Trademarks E2E is a trademark of Texas Instruments. All other trademarks are the property of their respective owners. 11.4 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 11.5 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 12 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 16 Submit Documentation Feedback Copyright © 2012–2016, Texas Instruments Incorporated Product Folder Links: TS3USB3200 PACKAGE OPTION ADDENDUM www.ti.com 28-Sep-2021 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) TS3USB32008RSVR ACTIVE UQFN RSV 16 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 ZTV TS3USB3200RSVR ACTIVE UQFN RSV 16 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 ZTO (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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