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TUSB501TDRFRQ1

TUSB501TDRFRQ1

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    WFDFN8_EP

  • 描述:

    ICREDRIVERUSB3.08WSON

  • 数据手册
  • 价格&库存
TUSB501TDRFRQ1 数据手册
Product Folder Sample & Buy Tools & Software Technical Documents Support & Community TUSB501-Q1 SLLSET3 – MAY 2016 TUSB501-Q1 USB 3.0 Single-Channel Redriver with Equalization 1 Features • • 1 • • • • • • • Q100 Automotive Qualified Aggressive Low-Power Architecture (Typical): – 126 mW Active Power – 20 mW in U2/U3 – 4 mW with No Connection Automatic LFPS DE Control Excellent Jitter and Loss Compensation – 32 inches of FR4 4 mil Stripline – 3 m of 30 AWG cable Integrated Termination Small 2 x 2 mm QFN Package Selectable Receiver Equalization, Transmitter DeEmphasis and Output Swing Hot-Plug Capable ESD Protection ±5 kV HBM and 1500 V CDM 2 Applications • • • • • • Cell Phones Computers Docking Stations TVs Active Cables Backplanes After power up, the TUSB501-Q1 periodically performs receiver detection on the TX pair. If it detects a SuperSpeed USB receiver, RX termination becomes enabled, and the TUSB501-Q1 is ready to redrive. The receiver equalizer has three gain settings that are controlled by pin EQ: 3 dB, 6 dB, and 9 dB. This should be set based on amount of loss before the TUSB501-Q1. Likewise, the output driver supports configuration of De-Emphasis and Output Swing (pins DE and OS). These settings allow the TUSB501-Q1 to be flexibly placed in the SuperSpeed USB path, with optimal performance. Over previous generations, the TUSB501-Q1 features reduced power in all link states, a stronger OS option, improved receiver equalization settings, and an intelligent LFPS Controller. This controller senses the low frequency signals and automatically disables driver de-emphasis, for full USB 3.0 compliance. The TUSB501-Q1 is packaged in a small 2 x 2 mm QFN, and operates through an industrial temperature range of –40°C to 105°C. Device Information(1) PART NUMBER TUSB501-Q1 BODY SIZE (NOM) 2.00 mm x 2.00 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. Simple Application 3 Description The TUSB501-Q1 is a 3rd generation 3.3-V USB 3.0 single-channel redriver. When 5 Gbps SuperSpeed USB signals travel across a PCB or cable, signal integrity degrades due to loss and inter-symbol interference. The TUSB501-Q1 recovers incoming data by applying equalization that compensates channel loss, and drives out signals with a high differential voltage. This extends the possible channel length, and enables systems to pass USB 3.0 compliance. The TUSB501-Q1 advanced state machine makes it transparent to hosts and devices. PACKAGE WSON USB Host TUSB501-Q1 TUSB501-Q1 USB Connector Copyright © 2016, Texas Instruments Incorporated 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. TUSB501-Q1 SLLSET3 – MAY 2016 www.ti.com Table of Contents 1 2 3 4 5 6 7 8 9 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Device Comparison Table..................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 3 4 7.1 7.2 7.3 7.4 7.5 7.6 7.7 7.8 4 4 4 4 5 5 6 7 Absolute Maximum Ratings ..................................... ESD Ratings.............................................................. Recommended Operating Conditions...................... Thermal Information .................................................. Power Supply Characteristics .................................. DC Electrical Characteristics .................................... AC Electrical Characteristics..................................... Typical Characteristics .............................................. 9.1 9.2 9.3 9.4 Overview ................................................................. Functional Block Diagram ....................................... Feature Description................................................. Device Functional Modes........................................ 10 11 11 12 10 Application and Implementation........................ 13 10.1 Application Information.......................................... 13 10.2 Typical Application ............................................... 13 11 Power Supply Recommendations ..................... 14 12 Layout................................................................... 15 12.1 Layout Guidelines ................................................. 15 12.2 Layout Example .................................................... 16 13 Device and Documentation Support ................. 17 13.1 13.2 13.3 13.4 Parameter Measurement Information .................. 8 Detailed Description ............................................ 10 Community Resources.......................................... Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 17 17 17 17 14 Mechanical, Packaging, and Orderable Information ........................................................... 17 4 Revision History 2 DATE REVISION NOTES April 2016 * Initial release. Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: TUSB501-Q1 TUSB501-Q1 www.ti.com SLLSET3 – MAY 2016 5 Device Comparison Table USB3.0 Re-drivers (5 Gbps) FEATURE TUSB501-Q1 TUSB551 SN65LVPE502A SN65LVPE512 Package 8 Pin WSON 12 Pin X2QFN 24 Pin VQFN 24 Pin WQFN Package Size 2 mm x 2 mm 1.6 mm x 1.6 mm 3 mm x 3 mm, 4 mm x 4 mm 3 mm x 3 mm Package Pitch 0.5 mm 0.4 mm 0.4 mm, 0.5 mm 0.4 mm 1 1 2 2 Active Power (Typical) 126 mW < 130 mW 315 mW 315 mW U2/U3 20 mW < 22 mW 70 mW 70 mW 4 mW (NC) < 8 mW (NC) 3.6 µW (Sleep) 3.6 µW (Sleep) Channels Low Power EQ Settings (dB) ESD Protection Power Supply 3, 6, 9 3, 6, 9 0, 7, 15 0, 7, 15 5 kV HBM 2 kV HBM 5 kV HBM 5 kV HBM 3.3 VDC 1.8 VDC 3.3 VDC 3.3 VDC 6 Pin Configuration and Functions DRF Package 8-Pin (WSON) (Top View) VCC 1 8 DE RXP 2 7 TXP GND RXN 3 6 TXN OS 4 5 EQ Pin Functions PIN NAME NO. RXP 2 RXN 3 TXN 6 TXP 7 EQ 5 DE OS 8 TYPE DESCRIPTION Differential input pair for 5 Gbps SuperSpeed USB signals. Differential I/O Differential output pair for 5 Gbps SuperSpeed USB signals. Sets the receiver equalizer gain. 3-state input with integrated pull-up and pulldown resistors. CMOS Input Sets the output swing (differential voltage amplitude). 2-state input with an integrated pull-down resistor. 4 VCC 1 GND Thermal Pad Sets the output de-emphasis gain. 3-state input with integrated pull-up and pulldown resistors. Power 3.3-V power supply Reference ground Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: TUSB501-Q1 3 TUSB501-Q1 SLLSET3 – MAY 2016 www.ti.com 7 Specifications 7.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX VCC –0.5 4 V Differential I/O –0.5 4 V CMOS inputs –0.5 VCC + 0.5 V Storage temperature, TSTG –65 150 °C Maximum junction temperature, TJ -40 125 °C Supply voltage range (2) Voltage range at any input or output terminal (1) (2) UNIT Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage values are with respect to the GND terminals. 7.2 ESD Ratings VALUE V(ESD) (1) (2) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) ±5000 Charged-device model (CDM), per JEDEC specification JESD22C101 (2) ±1500 UNIT V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 7.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) VCC Main power supply TA Operating free-air temperature CAC AC coupling capacitor MIN NOM MAX 3 3.3 3.6 V 105 °C 200 nF –40 75 100 UNIT 7.4 Thermal Information THERMAL METRIC (1) TUSB501-Q1 DRF (WSON) UNITS RθJA Junction-to-ambient thermal resistance 105.5 °C/W RθJC(top) Junction-to-case(top) thermal resistance 47.5 °C/W RθJB Junction-to-board thermal resistance 70.9 °C/W ψJT Junction-to-top characterization parameter 10.0 °C/W ψJB Junction-to-board characterization parameter 70.9 °C/W RθJC(bottom) Junction-to-case(bottom) thermal resistance 51.8 °C/W (1) 4 For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: TUSB501-Q1 TUSB501-Q1 www.ti.com 7.5 SLLSET3 – MAY 2016 Power Supply Characteristics over operating free-air temperature range (unless otherwise noted) PARAMETER ICC-ACTIVE Average active current TEST CONDITIONS MIN TYP (1) MAX (2) UNIT Link in U0 with SuperSpeed USB data transmission, OS = Low 38.1 Link in U0 with SuperSpeed USB data transmission, OS = High 43.8 29.8 mA mA 65 ICC-IDLE Average current in idle state Link has some activity, not in U0, OS = Low ICC-U2U3 Average current in U2/U3 Link in U2 or U3 6.1 mA ICC-NC Average current with no connection No SuperSpeed USB device is connected to TXP, TXN 1.3 mA PD Power Dissipation in U0 OS = Low 126 OS = High 145 234 TYP MAX (1) (2) mW TYP values use VCC = 3.3 V, TA = 25°C. MAX values use VCC = 3.6 V, TA = –40°C. 7.6 DC Electrical Characteristics over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN UNIT 3-State CMOS Inputs (EQ, DE) VIH High-level input voltage VIM Mid-level input voltage VIL Low-level input voltage VF Floating voltage RPU 2.8 V VCC / 2 V 0.6 VIN = High impedance V VCC / 2 V Internal pull-up resistance 190 kΩ RPD Internal pull-down resistance 190 kΩ IIH High-level input current VIN = 3.6 V IIL Low-level input current VIN = GND, VCC = 3.6 V 36 -36 µA µA 2-State CMOS Input (OS) VIH High-level input voltage VIL Low-level input voltage 2 VF Floating voltage RPD Internal pull-down resistance IIH High-level input current VIN = 3.6 V IIL Low-level input current VIN = GND V 0.5 VIN = High impedance GND V 270 kΩ 26 -1 Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: TUSB501-Q1 V µA µA 5 TUSB501-Q1 SLLSET3 – MAY 2016 www.ti.com 7.7 AC Electrical Characteristics over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN AC-coupled differential peak-to-peak signal 100 TYP MAX UNIT 1200 mVpp Differential Receiver (RXP, RXN) VDIFF-pp Input differential voltage swing VCM-RX Common-mode voltage bias in the receiver (DC) ZRX-DIFF Differential input impedance (DC) Present after a SuperSpeed USB device is detected on TXP/TXN 72 91 120 Ω ZRX-CM Common-mode input impedance (DC) Present after a SuperSpeed USB device is detected on TXP, TXN 18 22.8 30 Ω ZRX-HIGH- Common-mode input impedance with termination disabled (DC) Present when no SuperSpeed USB device is detected on TXP, TXN. Measured over the range of 0-500 mV with respect to GND. 25 35 Low Frequency Periodic Signaling (LFPS) Detect Threshold Below the minimum is squelched IMP-DC-POS VRX-LFPSDET-DIFF-pp 3.3 100 V kΩ 300 mVpp Differential Transmitter (TXP, TXN) VTX-DIFF-PP Transmitter differential voltage swing OS = Low, No load (transition-bit) OS = High, No load VTX-DE- Transmitter de-emphasis DE = Floating, OS = Low CTX TX input capacitance to GND At 2.5 GHz ZTX-DIFF Differential impedance of the driver ZTX-CM Common-mode impedance of the driver Measured with respect to AC ground over 0-500 mV ITX-SC TX short circuit current TX ± shorted to GND VCM-TX Common-mode voltage bias in the transmitter (DC) VCM-TX-AC AC common-mode voltage swing in active mode Within U0 and within LFPS VTX-IDLE- Differential voltage swing during electrical idle Tested with a high-pass filter Absolute delta of DC CM voltage during active and idle states Restrict the test condition to meet 100 mV DC electrical idle differential output voltage Voltage must be low pass filtered to remove any AC component 930 mVpp 1300 -3.5 dB RATIO DIFF -AC-pp VTX-CMDeltaU1-U0 VTX-idle-diffDC 1.25 75 93 18.75 1.2 0 0 pF 125 Ω 31.25 Ω 60 mA 2.5 V 100 mVpp 10 mVpp 100 mV 12 mV Differential Transmitter (TXP, TXN) tR, tF Output rise, fall time see Figure 6 20%-80% of differential voltage measured 1 inch from the output pin tRF-MM Output Rise, Fall time mismatch 20%-80% of differential voltage measured 1 inch from the output pin tdiff-LH, tdiff-HL Differential propagation delay see Figure 4 De-emphasis = -3.5 dB propagation delay between 50% level at input and output tidleEntry, tidleExit Idle entry and exit times see Figure 5 6 Submit Documentation Feedback 80 ps 20 ps 290 ps 3.6 ns Copyright © 2016, Texas Instruments Incorporated Product Folder Links: TUSB501-Q1 TUSB501-Q1 www.ti.com SLLSET3 – MAY 2016 AC Electrical Characteristics (continued) over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Timing tREADY Time from power applied until RX termination Apply 0 V to VCC, connect SuperSpeed USB termination to TX±, apply 3.3 V to VCC, and measure when ZRX-DIFF is enabled. 9 ms Jitter (1) (2) TJTX-EYE Total jitter DJTX Deterministic jitter RJTX (1) (2) (3) (4) Random jitter (2) (2) (4) EQ = Floating, OS = High, DE = High See Figure 3. 0.213 UI (3) 0.197 UI (3) 0.016 UI (3) Includes RJ at 10-12. Measured at the ends of reference channel in Figure 3 with K28.5 pattern, VID = 1000 mVpp, 5 Gbps, -3.5 dB de-emphasis from source. UI = 200 ps. Rj calculated as 14.069 times the RMS random jitter for 10-12 BER. 7.8 Typical Characteristics TA = 25°C TA = 25°C EQ = NC Figure 1. Input for Typical Output Measurement at TUSB501-Q1 DE = HIGH OS = HIGH Figure 2. Typical Output Eye for Jitter Measurement Setup in Figure 3 Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: TUSB501-Q1 7 TUSB501-Q1 SLLSET3 – MAY 2016 www.ti.com 8 Parameter Measurement Information Jitter Measurement A TUSB501-Q1 AWG Up to3m (30AWG) 24" 4" 1"-6" Figure 3. Jitter Measurement Setup spacer IN Tdiff_HL Tdiff_LH OUT Figure 4. Propagation Delay IN+ Vcm VRX-LFPS-DET-DIFF-pp INtidleExit t idleEntry OUT+ Vcm OUT- Figure 5. Electrical Idle Mode Exit and Entry Delay spacer 8 Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: TUSB501-Q1 TUSB501-Q1 www.ti.com SLLSET3 – MAY 2016 Parameter Measurement Information (continued) 80% 20% tr tf Figure 6. Output Rise and Fall Times Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: TUSB501-Q1 9 TUSB501-Q1 SLLSET3 – MAY 2016 www.ti.com 9 Detailed Description 9.1 Overview When 5 Gbps SuperSpeed USB signals travel across a PCB or cable, signal integrity degrades due to loss and inter-symbol interference. The TUSB501-Q1 recovers incoming data by applying equalization that compensates for channel loss, and drives out signals with a high differential voltage. This extends the possible channel length, and enables systems to pass USB 3.0 compliance. The TUSB501-Q1 advanced state machine makes it transparent to hosts and devices. After power up, the TUSB501-Q1 periodically performs receiver detection on the TX pair. If it detects a SuperSpeed USB receiver, the RX termination is enabled, and the TUSB501-Q1 is ready to re-drive. The device aggressive Low-Power Architecture operates at a 3.3-V power supply and achieves enhanced performance, as lower as 3 mW with no connection and 126 mW in active state. The receiver equalizer has three gain settings that are controlled by terminal EQ: 3 dB, 6 dB, and 9 dB. The equalization should be set based on amount of insertion loss in the channel before the TUSB501-Q1. Likewise, the output driver supports configuration of De-Emphasis and Output Swing (terminals DE and OS). The automatic LFPS De-Emphasis control further enables the system to be USB3.0 compliant. The TUSB501-Q1 operates over the industrial temperature range of -40ºC to 85ºC in a small 2 x 2 mm WSON package. Table 1. Control Pin Effects (Typical Values) PIN DESCRIPTION LOGIC STATE GAIN Low 3 dB EQ Equalization Amount Floating 6 dB High 9 dB DESCRIPTION LOGIC STATE OS Output Swing Amplitude Low 930 mVpp High 1300 mVpp PIN DESCRIPTION LOGIC STATE DE (1) 10 OUTPUT DIFFERENTIAL VOLTAGE FOR THE TRANSITION BIT PIN De-Emphasis Amount DE-EMPHASIS RATIO (1) FOR OS = LOW FOR OS = HIGH Low 0 dB –2.6 dB Floating –3.5 dB –5.9 dB High –6.2 dB –8.3 dB Typical values Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: TUSB501-Q1 TUSB501-Q1 www.ti.com SLLSET3 – MAY 2016 9.2 Functional Block Diagram EQ DE OS Driver Detect Receiver/ Equalizer Termination TX+ Termination RX+ TX- RX- VCC GND 3rd Generation State Machine LFPS Controller Copyright Copyright© ©2016, 2016,Texas TexasInstruments InstrumentsIncorporated Incorporated 9.3 Feature Description 9.3.1 Receiver Equalization The purpose of receiver equalization is to compensate for channel insertion loss and inter-symbol interference in the system before the input of the TUSB501-Q1. The receiver overcomes these losses by attenuating the low frequency components of the signals with respect to the high frequency components. The proper gain setting should be selected to match the channel insertion loss before the input of the TUSB501-Q1. 9.3.2 De-Emphasis Control and Output Swing The differential driver output provides selectable de-emphasis and output swing control in order to achieve USB3.0 compliance. The TUSB501-Q1 offers a unique way to adjust output de-emphasis and transmitter swing based on the OS and DE terminals. The level of de-emphasis required in the system depends on the channel length after the output of the re-driver. Transition bit Transition bit Consecutive bits Consecutive bits DE = 0dB 415mV DE = -3.5dB DE = -6.2dB VTX-DIFF- PP 0V DE = -6.2dB DE = -3.5dB DE = 0dB -415mV 0ps 200ps 400ps 600ps 800ps 1000ps 1200ps Figure 7. Transmitter Differential Voltage, OS = L Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: TUSB501-Q1 11 TUSB501-Q1 SLLSET3 – MAY 2016 www.ti.com Feature Description (continued) 9.3.3 Automatic LFPS Detection The TUSB501-Q1 features an intelligent low frequency periodic signaling (LFPS) controller. The controller senses the low frequency signals and automatically disables the driver de-emphasis, for full USB3.0 compliance. 9.3.4 Automatic Power Management The TUSB501-Q1 deploys RX detect, LFPS signal detection and signal monitoring to implement an automatic power management scheme to provide active, U2/U3 and disconnect modes. The automatic power management is driven by an advanced state machine, which is implemented to manage the device such that the re-driver operates smoothly in the links. 9.4 Device Functional Modes 9.4.1 Disconnect Mode The Disconnect mode is the lowest power state of the TUSB501-Q1. In this state, the TUSB501-Q1 periodically checks for far-end receiver termination on both TX. Upon detection of the far-end receiver’s termination on both ports, the TUSB501-Q1 will transition to U0 mode. 9.4.2 U Modes 9.4.2.1 U0 Mode The U0 mode is the highest power state of the TUSB501-Q1. Anytime super-speed traffic is being received, theTUSB501-Q1 remains in this mode. 9.4.2.2 U2/U3 Mode Next to the disconnect mode, the U2/U3 mode is next lowest power state. While in this mode, the TUSB501-Q1 periodically performs far-end receiver detection. 12 Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: TUSB501-Q1 TUSB501-Q1 www.ti.com SLLSET3 – MAY 2016 10 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 10.1 Application Information One example of the TUSB501-Q1 used in a Host application on transmit and receive channels is shown in Figure 8. The re-driver is needed on the transmit path to pass transmitter compliance due to loss between the Host and connector. The re-driver uses the equalization to recover the insertion loss and re-drive the signal with boosted swing down the remaining channel, through the USB3.0 cable, and into the device PCB. Additionally, the TUSB501-Q1 is needed on the receive channel for the Host to pass receiver jitter tolerance. The re-driver recovers the loss from the Device PCB, connector, and USB 3.0 cable and re-drives the signal going into the Host receiver. The equalization, output swing, and de-emphasis settings are dependent upon the type of USB3.0 signal path and end application. 10.2 Typical Application U2 1 R11 4.98K 5 DE1_PU 8 VDD33 U4B OS OS EQ EQ DE DE TUSB501-Q1 4 1 R12 4.98K 5 8 VBUS 2 2 U3B 4 DE2_PU 1 VDD33 USB2.0_D_N TUSB501-Q1 2 3 5 GND EN N/C 4 4 1 VOUT 1 VIN C6 1.0uF Device TX Host RX C7 10uF 2 2 2 2 1 1 2 7 6 HOST_USB3.0_TX_P 1 2 GND 2 5 USB3_RX_N DEVICE_USB3.0_RX_P 1 C9 0.01uF 2 1 C8 0.1uF 2 2 9 1 VCC_TUSB501-Q1 TXN RXN 3 6 7 Host TX C10 1.0uF USB3_RX_P TUSB501-Q1 C15 0.1uF VCC TXP RXP DEVICE_USB3.0_RX_N C14 0.1uF U3C GND_PAD USB2_D_P U3A HOST_USB3.0_TX_N 1 LP5907 1 3 VDD33 U5 C5 1.0uF USB2_D_N USB High Speed Line USB2.0_D_P VBUS VBUS_PWR Device RX GND_DRAIN U4A TUSB501-Q1 HOST_USB3.0_RX_N 3 HOST_USB3.0_RX_P 2 RXN TXN 6 1 2 DEVICE_USB3.0_TX_N8 USB3_TX_N C1 0.1uF RXP TXP TUSB501-Q1 7 1 2 DEVICE_USB3.0_TX_P9 10 SHIELD1 1 C12 0.01uF 2 1 C11 0.1uF 2 9 VCC_TUSB501-Q1 2 GND_PAD 1 1 U4C VCC USB3_TX_P C2 0.1uF 11 C13 1.0uF SHIELD2 TUSB501-Q1 USB3_STANDARD_TYPE-A_RECEPTACLE Copyright © 2016, Texas Instruments Incorporated Figure 8. Application Schematic 10.2.1 Design Requirements For this design example, use the parameter shown in Table 2. Table 2. Design Parameters PARAMETER VALUE VCC 3.3 V Supply nominal current 250 mA Operating free-air temperature TA = 25°C CAC AC coupling capacitor 100 nF Pull-up resistors 4.98 kΩ Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: TUSB501-Q1 13 TUSB501-Q1 SLLSET3 – MAY 2016 www.ti.com 10.2.2 Detailed Design Procedure To • • • begin the design process, determine the following: Equalization (EQ) setting De-Emphasis (DE) setting Output Swing Amplitude (OS) setting The equalization should be set based on the insertion loss in the pre-channel (channel before the TUSB501-Q1 device). The input voltage to the device is able to have a large range because of the receiver sensitivity and the available EQ settings. The EQ terminal can be pulled high through a resistor to VCC, low through a resistor to ground, or left floating. The application schematic above shows the implementation. The De-Emphasis setting should be set based on the length and characteristics of the post channel (channel after the TUSB501-Q1 device). Output de-emphasis can be tailored using the DE terminal. This terminal should be pulled high through a resistor to VCC, low through a resistor to ground, or left floating. Figure 8 shows the implementation. The output swing setting can also be configured based on the amplitude needed to pass the compliance test. This setting will also be based on the length of interconnect or cable the TUSB501-Q1 is driving. This terminal should be pulled low through a resistor to ground or left floating. Figure 8 shows the implementation. 10.2.3 Application Curves DE = 0 dB EQ = 6 dB 8 Input Trace DE = 0 dB Figure 9. Eye Diagram EQ = 6 dB 8 Input Trace Figure 10. SigTest CP1 Eye Diagram 11 Power Supply Recommendations This device is designed to operate with a 3.3-V supply. If using a higher voltage system power supply such as VBUS, a voltage regulator can be used to step down to 3.3 V. Decoupling capacitors may be used to reduce noise and improve power supply integrity. 14 Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: TUSB501-Q1 TUSB501-Q1 www.ti.com SLLSET3 – MAY 2016 12 Layout 12.1 Layout Guidelines • • • • • • • • • • • • • • • • • The 100-nF capacitors on the TXP and SSTXN nets should be placed close to the USB connector (Type A, Type B, and so forth). The ESD and EMI protection devices (if used) should also be placed as close as possible to the USB connector. Place voltage regulators as far away as possible from the differential pairs. In general, the large bulk capacitors associated with each power rail should be placed as close as possible to the voltage regulators. It is recommended that small decoupling capacitors for the 1.8-V power rail be placed close to the TUSB501Q1 as shown in Figure 11. The SuperSpeed differential pair traces for RXP/N and TXP/N must be designed with a characteristic impedance of 90 Ω ±10%. The PCB stack-up and materials determines the width and spacing needed for a characteristic impedance of 90 Ω. The SuperSpeed differential pair traces should be routed parallel to each other as much as possible. It is recommended the traces be symmetrical. In order to minimize cross talk, it is recommended to keep high speed signals away from each other. Each pair should be separated by at least 5 times the signal trace width. Separating with ground also helps minimize cross talk. Route all differential pairs on the same layer adjacent to a solid ground plane. Do not route differential pairs over any plane split. Adding test points will cause impedance discontinuity and will therefore negatively impact signal performance. If test points are used, they should be placed in series and symmetrically. They must not be placed in a manner that causes stub on the differential pair. Avoid 90 degree turns in traces. The use of bends in differential traces should be kept to a minimum. When bends are used, the number of left and right bends should be as equal as possible and the angle of the bend should be ≥ 135 degrees. This will minimize any length mismatch caused by the bends and therefore minimize the impact bends have on EMI. Match the etch lengths of the differential pair traces. There should be less than 5 mils difference between a SS differential pair signal and its complement. The USB 2.0 differential pairs should not exceed 50 mils relative trace length difference. The etch lengths of the differential pair groups do not need to match (that is, the length of the RXP/N pair to that of the TXP/N pair), but all trace lengths should be minimized. Minimize the use of vias in the differential pair paths as much as possible. If this is not practical, make sure that the same via type and placement are used for both signals in a pair. Any vias used should be placed as close as possible to the TUSB501-Q1 device. To ease routing, the polarity of the SS differential pairs can be swapped. This means that TXP can be routed to TXN or RXN can be routed to RXP. Do not place power fuses across the differential pair traces. Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: TUSB501-Q1 15 TUSB501-Q1 SLLSET3 – MAY 2016 www.ti.com 12.2 Layout Example Figure 11. Example Layout 16 Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: TUSB501-Q1 TUSB501-Q1 www.ti.com SLLSET3 – MAY 2016 13 Device and Documentation Support 13.1 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 13.2 Trademarks E2E is a trademark of Texas Instruments. All other trademarks are the property of their respective owners. 13.3 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 13.4 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 14 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated Product Folder Links: TUSB501-Q1 17 PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) TUSB501TDRFRQ1 ACTIVE WSON DRF 8 3000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 105 501Q (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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