UC2709N

UC1709, UC2709, UC3709 DUAL HIGH- SPEED FET DRIVER SLUS196C -- NOVEMBER 1996 -- REVISED FEBRUARY 2008 D D D D D D 1.5 Amp Source/Sink Drive Pin Compatible with 0026 Products 40 ns Rise and Fall into 1000pF Low Quiescent Current 5 V to 40 V Operation Thermal Protection simplified schematic (only one driver shown) VCC 5 VOLT REGULATOR description The UC3709 family of power drivers is an effective low-cost solution to the problem of providing fast turn-on and off for the capacitive gates of power MOSFETs. Made with a high-speed Schottky process, these devices will provide up to 1.5 A of either source or sink current from a totem--pole output stage configured for minimal cross-conduction current spike. THERMAL SENSE INPUT A OR B 6k INPUT A OR B 5.6 V The UC3709 is pin compatible with the MMH0026 or DS0026, and while the delay times are longer, the supply current is much less than these older devices. GND UDG--00068 With inverting logic, these units feature complete TTL compatibility at the inputs with an output stage that can swing over 30 V. This design also includes thermal shutdown protection. absolute maximum ratings over operating free-air temperature range (unless otherwise noted)†} Parameter DW PACKAGE J PACKAGE L PACKAGE N PACKAGE UNIT 40 40 40 40 V . . . . . . . . Steady--State ±500 ±500 ±500 ±500 mA . . . . . . . . Peak Transient Supply Voltage, VCC Output Current (Source or Sink) ±1.5 ±1.0 ±1.0 ±1.5 A . . . . . . . . Capacitive Discharge Energy 20 15 15 20 mJ Digital Inputs} 5.5 5.5 5.5 5.5 V Power Dissipation at TA = 25°C 1 1 1 1 W Power Dissipation at TC = 25°C 3 2 2 3 W Operating Junction Temperature Range (TJ) --55 to 125 --55 to 125 --55 to 125 --55 to 125 °C Storage Temperature Range --65 to 150 --65 to 150 --65 to 150 --65 to 150 °C 300 300 300 300 °C Lead Temperature (Soldering, 10 Seconds) † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. ‡ All currents are positive into and negative out of the specified terminals. Digital drive can exceed 5.5V if input is limited to 10mA. Consult the Packaging Section of the Databook for thermal limitations and considerations of the package. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2004 -- 2008, Texas Instruments Incorporated www.ti.com 1 UC1709, UC2709, UC3709 DUAL HIGH- SPEED FET DRIVER SLUS196C -- NOVEMBER 1996 -- REVISED FEBRUARY 2008 THERMAL RESISTANCE TABLE PACKAGE θjc(°C/W) θja(°C/W) SOIC--16 (DW) 20 (1) 35 to 58 (3) DIL--16 (J) 28 (2) 125 to 160 LCC--16 (L) 20 (2) 70 to 80 DIL--16 (N) 45 90 (3) NOTES: (1) Specified thermal resistance is θjl (junction to lead)where noted. (2) θjc data values stated were derived from MIL-STD-1835B. MIL-STD-1835B states, “The baseline values shown are worst case (mean +2s) for a 60x60 mil microcircuit device silicon die and applicable for devices with die sizes up to 14400 square mils. For device die sizes greater than 14400 square mils use the following values; dual-in-line, 11°C/W; flat pack, .10°C/W; pin grid array, 10°C/W”. (3) Specified θja (junction to ambient) is for devices mounted to 5-inch2 FR4 PC board with one ounce copper where noted. When resistance range is given, lower values are for 5 inch2 aluminum PC board. Test PWB was 0.062 inch thick and typically used 0.635-mm trace widths for power packages and 1.3-mm trace widths for non-power packages with a 100-mil x 100-mil probe land area at the end of each trace. 2 N/C N/C OUTPUT A 3 2 1 20 19 8 PIN DIL N OR J PACKAGE (TOP VIEW) N/C INPUT A LCC--20 (TOP VIEW) L PACKAGES N/C 1 8 N/C INPUT A 2 7 OUTPUT A GROUND 3 6 VCC INPUT B 4 5 OUTPUT B N/C -- No internal connection SOIC--16 (TOP VIEW) DW PACKAGE N/C 1 16 VCC N/C 2 15 N/C N/C 3 14 N/C OUTPUT A 4 13 OUTPUT B N/C 5 12 N/C INPUT A 6 11 INPUT B 18 N/C N/C 5 17 N/C GROUND 6 16 VCC N/C 7 15 N/C N/C 7 10 N/C N/C 8 14 N/C GROUND 8 9 N/C N/C OUTPUT B 10 11 12 13 N/C 9 N/C 4 INPUT B N/C www.ti.com UC1709, UC2709, UC3709 DUAL HIGH- SPEED FET DRIVER SLUS196C -- NOVEMBER 1996 -- REVISED FEBRUARY 2008 electrical characteristics over recommended operating free-air temperature range, TA = 55°C to 125°C for the UC1709, --40°C to 85°C for the UC2709, and 0°C to 70°C for the UC3709; VCC = 20 V, TA = TJ. PARAMETER Supply current TEST CONDITIONS MIN TYP MAX UNIT Both outputs low 10 12 mA Both outputs high 7 10 mA 0.8 V Logic 0 input voltage Logic 1 input voltage 2.2 V Input current VI = 0 --0.6 --1.0 mA Input leakage VI = 5 V Output high saturation VCC --V VO Output low saturation VO 0.05 0.1 mA IO = --50 mA 1.5 2.0 V IO = --500 mA 2.0 2.5 V IO = 50 mA 0.1 0.4 V IO = 500 mA 2.0 2.5 Thermal shutdown 155 V mA typical switching characteristics, VCC = 20 V, TA = 25°C, delays measured to 10% output change PARAMETER TEST CONDITIONS OUTPUT CL = 0 nF 2.2 nF UNITS Rise time delay 80 80 ns 10% to 90% rise 20 40 ns Fall time delay 60 80 ns 20 40 ns 10% to 90% fall Output rise VCC cross--conduction curent spike duration Output fall NOTE: Refer to UC1705 specifications for further information. www.ti.com 25 ns 0 ns 3 UC1709, UC2709, UC3709 DUAL HIGH- SPEED FET DRIVER SLUS196C -- NOVEMBER 1996 -- REVISED FEBRUARY 2008 APPLICATION INFORMATION D1, D2: UC3611 Schottky Diodes Figure 1. Power bipolar drive circuit. D1, D2: UC3611 Schottky Diodes Figure 2. Power MOSFET drive circuit. Figure 3. Charge pump circuits. 4 www.ti.com UC1709, UC2709, UC3709 DUAL HIGH- SPEED FET DRIVER SLUS196C -- NOVEMBER 1996 -- REVISED FEBRUARY 2008 D1, D2: UC3611 Schottky Diodes Figure 4. Transformer coupled push--pull MOSFET drive circuit. D1, D2: UC3611 Schottky Diodes Figure 5. Power MOSFET drive circuit using negative bias voltage and level shifting to ground referenced PWM www.ti.com 5 UC1709, UC2709, UC3709 DUAL HIGH- SPEED FET DRIVER SLUS196C -- NOVEMBER 1996 -- REVISED FEBRUARY 2008 D1, D2: UC3611 Schottky Diodes Figure 6. Transformer coupled MOSFET drive circuit. 6 www.ti.com PACKAGE OPTION ADDENDUM www.ti.com 10-Jun-2022 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) Samples (4/5) (6) 5962-0151201VPA ACTIVE CDIP JG 8 1 Non-RoHS & Green SNPB N / A for Pkg Type -55 to 125 0151201VPA UC1709 Samples UC1709J ACTIVE CDIP JG 8 1 Non-RoHS & Green SNPB N / A for Pkg Type -55 to 125 UC1709J Samples UC1709J883B ACTIVE CDIP JG 8 1 Non-RoHS & Green SNPB N / A for Pkg Type -55 to 125 UC1709J/ 883B Samples UC1709L ACTIVE LCCC FK 20 1 Non-RoHS & Green SNPB N / A for Pkg Type -55 to 125 UC1709L Samples UC1709L883B ACTIVE LCCC FK 20 1 Non-RoHS & Green SNPB N / A for Pkg Type -55 to 125 UC1709L/ 883B Samples UC2709DW ACTIVE SOIC DW 16 40 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 85 UC2709DW Samples UC2709N ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type -40 to 85 UC2709N Samples UC3709DW ACTIVE SOIC DW 16 40 RoHS & Green NIPDAU Level-2-260C-1 YEAR 0 to 70 UC3709DW Samples UC3709N ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type 0 to 70 UC3709N Samples UC3709NG4 ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type 0 to 70 UC3709N Samples (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of