UC1709, UC2709, UC3709
DUAL HIGH- SPEED FET DRIVER
SLUS196C -- NOVEMBER 1996 -- REVISED FEBRUARY 2008
D
D
D
D
D
D
1.5 Amp Source/Sink Drive
Pin Compatible with 0026 Products
40 ns Rise and Fall into 1000pF
Low Quiescent Current
5 V to 40 V Operation
Thermal Protection
simplified schematic (only one driver shown)
VCC
5 VOLT
REGULATOR
description
The UC3709 family of power drivers is an
effective low-cost solution to the problem of
providing fast turn-on and off for the
capacitive gates of power MOSFETs. Made
with a high-speed Schottky process, these
devices will provide up to 1.5 A of either
source or sink current from a totem--pole
output stage configured for minimal
cross-conduction current spike.
THERMAL
SENSE
INPUT
A OR B
6k
INPUT
A OR B
5.6 V
The UC3709 is pin compatible with the
MMH0026 or DS0026, and while the delay
times are longer, the supply current is much
less than these older devices.
GND
UDG--00068
With inverting logic, these units feature complete TTL compatibility at the inputs with an output stage that can
swing over 30 V. This design also includes thermal shutdown protection.
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)†}
Parameter
DW PACKAGE
J PACKAGE
L PACKAGE
N PACKAGE
UNIT
40
40
40
40
V
. . . . . . . . Steady--State
±500
±500
±500
±500
mA
. . . . . . . . Peak Transient
Supply Voltage, VCC
Output Current (Source or Sink)
±1.5
±1.0
±1.0
±1.5
A
. . . . . . . . Capacitive Discharge Energy
20
15
15
20
mJ
Digital Inputs}
5.5
5.5
5.5
5.5
V
Power Dissipation at TA = 25°C
1
1
1
1
W
Power Dissipation at TC = 25°C
3
2
2
3
W
Operating Junction Temperature Range (TJ)
--55 to 125
--55 to 125
--55 to 125
--55 to 125
°C
Storage Temperature Range
--65 to 150
--65 to 150
--65 to 150
--65 to 150
°C
300
300
300
300
°C
Lead Temperature (Soldering, 10 Seconds)
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
‡ All currents are positive into and negative out of the specified terminals. Digital drive can exceed 5.5V if input is limited to 10mA. Consult the
Packaging Section of the Databook for thermal limitations and considerations of the package.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright © 2004 -- 2008, Texas Instruments Incorporated
www.ti.com
1
UC1709, UC2709, UC3709
DUAL HIGH- SPEED FET DRIVER
SLUS196C -- NOVEMBER 1996 -- REVISED FEBRUARY 2008
THERMAL RESISTANCE TABLE
PACKAGE
θjc(°C/W)
θja(°C/W)
SOIC--16 (DW)
20 (1)
35 to 58 (3)
DIL--16 (J)
28 (2)
125 to 160
LCC--16 (L)
20 (2)
70 to 80
DIL--16 (N)
45
90 (3)
NOTES: (1) Specified thermal resistance is θjl (junction to lead)where noted.
(2) θjc data values stated were derived from MIL-STD-1835B. MIL-STD-1835B states, “The baseline values
shown are worst case (mean +2s) for a 60x60 mil microcircuit device silicon die and applicable for devices
with die sizes up to 14400 square mils. For device die sizes greater than 14400 square mils use the
following values; dual-in-line, 11°C/W; flat pack, .10°C/W; pin grid array, 10°C/W”.
(3) Specified θja (junction to ambient) is for devices mounted to 5-inch2 FR4 PC board with one ounce copper
where noted. When resistance range is given, lower values are for 5 inch2 aluminum PC board. Test PWB
was 0.062 inch thick and typically used 0.635-mm trace widths for power packages and 1.3-mm trace
widths for non-power packages with a 100-mil x 100-mil probe land area at the end of each trace.
2
N/C
N/C
OUTPUT A
3
2
1
20 19
8 PIN DIL N OR J PACKAGE
(TOP VIEW)
N/C
INPUT A
LCC--20 (TOP VIEW)
L PACKAGES
N/C
1
8
N/C
INPUT A
2
7
OUTPUT A
GROUND
3
6
VCC
INPUT B
4
5
OUTPUT B
N/C -- No internal connection
SOIC--16 (TOP VIEW)
DW PACKAGE
N/C
1
16 VCC
N/C
2
15 N/C
N/C
3
14 N/C
OUTPUT A
4
13 OUTPUT B
N/C
5
12 N/C
INPUT A
6
11 INPUT B
18
N/C
N/C
5
17
N/C
GROUND
6
16
VCC
N/C
7
15
N/C
N/C
7
10 N/C
N/C
8
14
N/C
GROUND
8
9 N/C
N/C
OUTPUT B
10 11 12 13
N/C
9
N/C
4
INPUT B
N/C
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UC1709, UC2709, UC3709
DUAL HIGH- SPEED FET DRIVER
SLUS196C -- NOVEMBER 1996 -- REVISED FEBRUARY 2008
electrical characteristics over recommended operating free-air temperature range, TA = 55°C to
125°C for the UC1709, --40°C to 85°C for the UC2709, and 0°C to 70°C for the UC3709;
VCC = 20 V, TA = TJ.
PARAMETER
Supply current
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Both outputs low
10
12
mA
Both outputs high
7
10
mA
0.8
V
Logic 0 input voltage
Logic 1 input voltage
2.2
V
Input current
VI = 0
--0.6
--1.0
mA
Input leakage
VI = 5 V
Output high saturation VCC --V
VO
Output low saturation VO
0.05
0.1
mA
IO = --50 mA
1.5
2.0
V
IO = --500 mA
2.0
2.5
V
IO = 50 mA
0.1
0.4
V
IO = 500 mA
2.0
2.5
Thermal shutdown
155
V
mA
typical switching characteristics, VCC = 20 V, TA = 25°C, delays measured to 10% output change
PARAMETER
TEST CONDITIONS
OUTPUT CL =
0 nF
2.2 nF
UNITS
Rise time delay
80
80
ns
10% to 90% rise
20
40
ns
Fall time delay
60
80
ns
20
40
ns
10% to 90% fall
Output rise
VCC cross--conduction
curent spike duration
Output fall
NOTE: Refer to UC1705 specifications for further information.
www.ti.com
25
ns
0
ns
3
UC1709, UC2709, UC3709
DUAL HIGH- SPEED FET DRIVER
SLUS196C -- NOVEMBER 1996 -- REVISED FEBRUARY 2008
APPLICATION INFORMATION
D1, D2: UC3611 Schottky Diodes
Figure 1. Power bipolar drive circuit.
D1, D2: UC3611 Schottky Diodes
Figure 2. Power MOSFET drive circuit.
Figure 3. Charge pump circuits.
4
www.ti.com
UC1709, UC2709, UC3709
DUAL HIGH- SPEED FET DRIVER
SLUS196C -- NOVEMBER 1996 -- REVISED FEBRUARY 2008
D1, D2: UC3611 Schottky Diodes
Figure 4. Transformer coupled push--pull MOSFET drive circuit.
D1, D2: UC3611 Schottky Diodes
Figure 5. Power MOSFET drive circuit using negative bias voltage
and level shifting to ground referenced PWM
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5
UC1709, UC2709, UC3709
DUAL HIGH- SPEED FET DRIVER
SLUS196C -- NOVEMBER 1996 -- REVISED FEBRUARY 2008
D1, D2: UC3611 Schottky Diodes
Figure 6. Transformer coupled MOSFET drive circuit.
6
www.ti.com
PACKAGE OPTION ADDENDUM
www.ti.com
10-Jun-2022
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
Samples
(4/5)
(6)
5962-0151201VPA
ACTIVE
CDIP
JG
8
1
Non-RoHS
& Green
SNPB
N / A for Pkg Type
-55 to 125
0151201VPA
UC1709
Samples
UC1709J
ACTIVE
CDIP
JG
8
1
Non-RoHS
& Green
SNPB
N / A for Pkg Type
-55 to 125
UC1709J
Samples
UC1709J883B
ACTIVE
CDIP
JG
8
1
Non-RoHS
& Green
SNPB
N / A for Pkg Type
-55 to 125
UC1709J/
883B
Samples
UC1709L
ACTIVE
LCCC
FK
20
1
Non-RoHS
& Green
SNPB
N / A for Pkg Type
-55 to 125
UC1709L
Samples
UC1709L883B
ACTIVE
LCCC
FK
20
1
Non-RoHS
& Green
SNPB
N / A for Pkg Type
-55 to 125
UC1709L/
883B
Samples
UC2709DW
ACTIVE
SOIC
DW
16
40
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
-40 to 85
UC2709DW
Samples
UC2709N
ACTIVE
PDIP
P
8
50
RoHS & Green
NIPDAU
N / A for Pkg Type
-40 to 85
UC2709N
Samples
UC3709DW
ACTIVE
SOIC
DW
16
40
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
0 to 70
UC3709DW
Samples
UC3709N
ACTIVE
PDIP
P
8
50
RoHS & Green
NIPDAU
N / A for Pkg Type
0 to 70
UC3709N
Samples
UC3709NG4
ACTIVE
PDIP
P
8
50
RoHS & Green
NIPDAU
N / A for Pkg Type
0 to 70
UC3709N
Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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