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UCC27211A
SLUSBL4C – AUGUST 2013 – REVISED OCTOBER 2015
UCC27211A 120-V Boot, 4-A Peak, High-Frequency High-Side and Low-Side Driver
1 Features
2 Applications
•
•
1
•
•
•
•
•
•
•
•
•
•
•
•
Drives Two N-Channel MOSFETs in High-Side
and Low-Side Configuration With Independent
Inputs
Maximum Boot Voltage 120-V DC
4-A Sink, 4-A Source Output Currents
0.9-Ω Pullup and Pulldown Resistance
Input Pins Can Tolerate –10 V to +20 V and are
Independent of Supply Voltage Range
TTL or Pseudo-CMOS Compatible Input Versions
8-V to 17-V VDD Operating Range, (20-V ABS
MAX)
7.2-ns Rise and 5.5-ns Fall Time With 1000-pF
Load
Fast Propagation Delay Times (20-ns typical)
4-ns Delay Matching
Symmetrical Undervoltage Lockout for High-Side
and Low-Side Driver
All Industry Standard Packages Available
– SOIC-8
– 4-mm × 4-mm SON-8
– 4-mm × 4-mm SON-10
Specified from –40 to +140°C
•
•
•
•
•
•
Power Supplies for Telecom, Datacom, and
Merchant
Half-Bridge and Full-Bridge Converters
Push-Pull Converters
High Voltage Synchronous-Buck Converters
Two-Switch Forward Converters
Active-Clamp Forward Converters
Class-D Audio Amplifiers
3 Description
The UCC27211A driver is based on the popular
UCC27201 MOSFET drivers; but, this device offers
several significant performance improvements. Peak
output pullup and pulldown current has been
increased to 4-A source and 4-A sink, and pullup and
pulldown resistance have been reduced to 0.9 Ω, and
thereby allows for driving large power MOSFETs with
minimized switching losses during the transition
through the Miller Plateau of the MOSFET. The input
structure can directly handle –10 VDC, which
increases robustness and also allows direct interface
to gate-drive transformers without using rectification
diodes. The inputs are also independent of supply
voltage and have a 20-V maximum rating.
Device Information(1)
PART NUMBER
UCC27211A
PACKAGE
BODY SIZE (NOM)
SOIC (8)
4.90 mm × 3.91 mm
VSON (8)
4.00 mm × 4.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Typical Application Diagram
+12V
Propagation Delays vs Supply Voltage
32
+100V
T=25°C
SECONDARY
SIDE
CIRCUIT
VDD
HB
DRIVE
HI
LI
CONTROL
HI
PWM
CONTROLLER
HO
HS
DRIVE
LO
LO
UCC27211A
Propagation Delay (ns)
28
24
20
16
12
TDLRR
TDLFF
TDHRR
TDHFF
8
VSS
ISOLATION
AND
FEEDBACK
4
UDG-13114
0
8
12
16
VDD=VHB − Supply Voltage (V)
20
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
UCC27211A
SLUSBL4C – AUGUST 2013 – REVISED OCTOBER 2015
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Description (continued).........................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
5
7.1
7.2
7.3
7.4
7.5
7.6
7.7
7.8
5
5
5
6
6
7
7
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Switching Characteristics: Propagation Delays ........
Switching Characteristics: Delay Matching ...............
Switching Characteristics: Output Rise and Fall
Time ...........................................................................
7.9 Switching Characteristics: Miscellaneous .................
7.10 Typical Characteristics ............................................
8
7
7
9
Detailed Description ............................................ 12
8.1
8.2
8.3
8.4
9
Overview .................................................................
Functional Block Diagram .......................................
Feature Description.................................................
Device Functional Modes........................................
12
13
13
14
Application and Implementation ........................ 15
9.1 Application Information............................................ 15
9.2 Typical Application .................................................. 15
10 Power Supply Recommendations ..................... 20
11 Layout................................................................... 20
11.1 Layout Guidelines ................................................. 20
11.2 Layout Example .................................................... 21
11.3 Thermal Considerations ........................................ 21
12 Device and Documentation Support ................. 22
12.1
12.2
12.3
12.4
12.5
Documentation Support ........................................
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
22
22
22
22
22
13 Mechanical, Packaging, and Orderable
Information ........................................................... 22
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision B (September 2013) to Revision C
Page
•
Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section ................................................................................................. 1
•
Changed PowerPAD to thermal pad throughout document .................................................................................................. 1
•
Removed the UCC27210A device from the data sheet ......................................................................................................... 1
Changes from Revision A (August 2013) to Revision B
•
Page
Changed marketing status from product preview to production data..................................................................................... 1
Changes from Original (August 2013) to Revision A
Page
•
Added Note 2 to the Terminal Functions Table...................................................................................................................... 4
•
Changed Repetitive pulse data from –18 V to –(24 V – VDD)............................................................................................... 5
•
Added additional details to Note 2.......................................................................................................................................... 5
•
Changed Voltage on HS, VHS (repetitive pulse < 100 ns) data from –15 to –(24 V – VDD).................................................. 5
2
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5 Description (continued)
The switching node of the UCC27211A (HS pin) can handle –18-V maximum, which allows the high-side channel
to be protected from inherent negative voltages caused by parasitic inductance and stray capacitance. The
UCC27210A (Pseudo-CMOS inputs) and UCC27211A (TTL inputs) have increased hysteresis that allows for
interface to analog or digital PWM controllers with enhanced noise immunity.
The low-side and high-side gate drivers are independently controlled and matched to 2 ns between the turnon
and turnoff of each other.
An on-chip 120-V rated bootstrap diode eliminates the external discrete diodes. Undervoltage lockout is provided
for both the high-side and the low-side drivers which provides symmetric turnon and turnoff behavior and forces
the outputs low if the drive voltage is below the specified threshold.
The UCC27211A device is offered in 8-pin SOIC (D) and 8-pin VSON (DRM) packages.
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6 Pin Configuration and Functions
D Package
8-Pin SOIC
Top View
DRM Package
8-Pin VSON
Top View
8
LO
7
VSS
HO 3
6
LI
4
5
HI
VDD
VDD
1
8
HB
2
7
HO
3
6
HS
4
5
1
LO
Exposed
Thermal
Die Pad *
HB 2
VSS
LI
HS
HI
Pin Functions
PIN
NAME
NO.
I/O
DESCRIPTION
HB
2
P
High-side bootstrap supply. The bootstrap diode is on-chip but the external bootstrap capacitor is
required. Connect positive side of the bootstrap capacitor to this pin. Typical range of HB bypass
capacitor is 0.022 µF to 0.1 µF. The capacitor value is dependant on the gate charge of the highside MOSFET and must also be selected based on speed and ripple criteria.
HI
5
I
High-side input. (1)
HO
3
O
High-side output. Connect to the gate of the high-side power MOSFET.
HS
4
P
High-side source connection. Connect to source of high-side power MOSFET. Connect the
negative side of bootstrap capacitor to this pin.
LI
6
I
Low-side input. (1)
LO
8
O
Low-side output. Connect to the gate of the low-side power MOSFET.
VDD
1
P
Positive supply to the lower-gate driver. De-couple this pin to VSS (GND). Typical decoupling
capacitor range is 0.22 µF to 4.7 µF (See (2)).
VSS
7
—
Negative supply terminal for the device that is generally grounded.
—
Utilized on the DRM package only. Electrically referenced to VSS (GND). Connect to a large
thermal mass trace or GND plane to dramatically improve thermal performance.
Thermal pad (3)
(1)
(2)
(3)
4
HI or LI input is assumed to connect to a low impedance source signal. The source output impedance is assumed less than 100 Ω. If the
source impedance is greater than 100 Ω, add a bypassing capacitor, each, between HI and VSS and between LI and VSS. The added
capacitor value depends on the noise levels presented on the pins, typically from 1 nF to 10 nF should be effective to eliminate the
possible noise effect. When noise is present on two pins, HI or LI, the effect is to cause HO and LO malfunctions to have wrong logic
outputs.
For cold temperature applications TI recommends the upper capacitance range. Follow the Layout Guidelines for PCB layout.
The thermal pad is not directly connected to any leads of the package; however, it is electrically and thermally connected to the
substrate which is the ground of the device.
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7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
Supply voltage range, VDD (2), VHB – VHS
Input voltages on LI and HI, VLI, VHI
MIN
MAX
UNIT
–0.3
20
V
V
–10
20
–0.3
VDD + 0.3
–2
VDD + 0.3
VHS – 0.3
VHB + 0.3
VHS – 2
VHB + 0.3
–1
115
–(24 V – VDD)
115
Voltage on HB, VHB
–0.3
120
V
Operating virtual junction temperature range, TJ
–40
150
°C
Storage temperature, TSTG
–65
150
°C
Output voltage on LO, VLO
Output voltage on HO, VHO
Voltage on HS, VHS
(1)
(2)
(3)
DC
Repetitive pulse < 100 ns (3)
DC
Repetitive pulse < 100 ns (3)
DC
Repetitive pulse < 100 ns
(3)
V
V
V
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltages are with respect to VSS unless otherwise noted. Currents are positive into and negative out of the specified terminal.
Verified at bench characterization. VDD is the value used in an application design.
7.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±2000
Charged-device model (CDM), per JEDEC specification JESD22C101 (2)
±1000
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
all voltages are with respect to VSS; currents are positive into and negative out of the specified terminal. –40°C < TJ = TA <
140°C (unless otherwise noted)
Supply voltage range, VDD, VHB – VHS
Voltage on HB, VHB
NOM
8
12
MAX
UNIT
17
V
–1
105
V
–(24 V – VDD)
110
V
VHS + 8,
VDD – 1
VHS + 17,
115
V
50
V/ns
–40
140
°C
Voltage on HS, VHS
Voltage on HS, VHS (repetitive pulse < 100 ns)
MIN
Voltage slew rate on HS
Operating junction temperature
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7.4 Thermal Information
UCC27211A
THERMAL METRIC (1)
D (SOIC)
DRM (SON)
8 PINS
8 PINS
UNIT
RθJA
Junction-to-ambient thermal resistance
111.8
37.7
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
56.9
47.2
°C/W
RθJB
Junction-to-board thermal resistance
53.0
9.6
°C/W
ψJT
Junction-to-top characterization parameter
7.8
2.8
°C/W
ψJB
Junction-to-board characterization parameter
52.3
9.4
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
n/a
3.6
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
7.5 Electrical Characteristics
VDD = VHB = 12 V, VHS = VSS = 0 V, no load on LO or HO, TA = TJ = –40°C to 140°C, (unless otherwise noted)
PARAMETER
TEST CONDITION
MIN
TYP
MAX
UNIT
0.05
0.085
0.17
mA
2.1
2.6
6.5
mA
2.1
2.5
6.5
mA
0.015
0.065
0.1
mA
1.5
2.5
5.1
mA
SUPPLY CURRENTS
IDD
VDD quiescent current
V(LI) = V(HI) = 0 V
IDDO
VDD operating current
f = 500 kHz, CLOAD = 0
IHB
Boot voltage quiescent current
V(LI) = V(HI) = 0 V
IHBO
Boot voltage operating current
f = 500 kHz, CLOAD = 0
IHBS
HB to VSS quiescent current
V(HS) = V(HB) = 115 V
0.0005
1
µA
IHBSO
HB to VSS operating current
f = 500 kHz, CLOAD = 0
0.07
1.2
mA
INPUT
VHIT
Input voltage threshold
1.9
2.3
2.7
V
VLIT
Input voltage threshold
1.3
1.6
1.9
V
VIHYS
Input voltage hysteresis
RIN
Input pulldown resistance
700
mV
68
kΩ
UNDER-VOLTAGE LOCKOUT (UVLO)
VDDR
VDD turnon threshold
VDDHYS
Hysteresis
VHBR
VHB turnon threshold
VHBHYS
Hysteresis
6.2
7
7.8
0.5
5.6
6.7
V
V
7.9
1.1
V
V
BOOTSTRAP DIODE
VF
Low-current forward voltage
IVDD-HB = 100 µA
0.65
0.8
V
VFI
High-current forward voltage
IVDD-HB = 100 mA
0.85
0.95
V
RD
Dynamic resistance, ΔVF/ΔI
IVDD-HB = 100 mA and 80 mA
0.3
0.5
0.85
Ω
0.05
0.1
0.19
V
0.1
0.16
0.29
V
LO GATE DRIVER
VLOL
Low-level output voltage
ILO = 100 mA
VLOH
High level output voltage
ILO = –100 mA, VLOH = VDD – VLO
Peak pull-up current (1)
VLO = 0 V
3.7
A
Peak pull-down current (1)
VLO = 12 V
4.5
A
HO GATE DRIVER
VHOL
Low-level output voltage
IHO = 100 mA
VHOH
High-level output voltage
IHO = –100 mA, VHOH = VHB – VHO
Peak pull-up current (1)
VHO = 0 V
3.7
A
VHO = 12 V
4.5
A
Peak pull-down current
(1)
6
(1)
0.05
0.1
0.19
V
0.1
0.16
0.29
V
Ensured by design.
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7.6 Switching Characteristics: Propagation Delays
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
TDLFF
VLI falling to VLO falling
10
16
30
ns
TDHFF
VHI falling to VHO falling
10
16
30
ns
TDLRR
VLI rising to VLO rising
10
20
42
ns
TDHRR
VHI rising to VHO rising
10
20
42
ns
TYP
MAX
UNIT
TJ = 25°C
4
9.5
TJ = –40°C to 140°C
4
17
TJ = 25°C
4
9.5
TJ = –40°C to 140°C
4
17
CLOAD = 0
7.7 Switching Characteristics: Delay Matching
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TMON
From HO OFF to LO ON
TMOFF
From LO OFF to HO ON
TEST CONDITIONS
MIN
ns
ns
7.8 Switching Characteristics: Output Rise and Fall Time
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
tR
LO rise time
tR
HO rise time
tF
LO fall time
tF
HO fall time
tR
LO, HO
CLOAD = 0.1 µF, (3 V to 9 V)
0.36
0.6
µs
tF
LO, HO
CLOAD = 0.1 µF, (9 V to 3 V)
0.15
0.4
µs
TYP
MAX
CLOAD = 1000 pF, from 10% to 90%
CLOAD = 1000 pF, from 90% to 10%
7.2
ns
7.2
ns
5.5
ns
5.5
ns
7.9 Switching Characteristics: Miscellaneous
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
Minimum input pulse width that changes the
output
Bootstrap diode turnoff time (1) (2)
(1)
(2)
(3)
UNIT
50
IF = 20 mA, IREV = 0.5 A (3)
20
ns
ns
Ensured by design.
IF: Forward current applied to bootstrap diode, IREV: Reverse current applied to bootstrap diode.
Typical values for TA = 25°C.
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LI
Input
(HI, LI)
HI
TDLRR, TDHRR
LO
Output
(HO, LO)
TDLFF, TDHFF
HO
TMON
TMOFF
Figure 1. Timing Diagram
8
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7.10 Typical Characteristics
100
T = 25°C
VDD = 12V
IDDO − Operating Current (mA)
IDD, IHB − Quiescent Current (µA)
100
80
60
40
20
IDD
IHB
0
0
2
4
6
8
10
12
14
16
VDD = VHB − Supply Voltage (V)
18
10
1
0.1
0.01
20
CL=0pF, T=−40°C
CL=0pF, T=25°C
CL=0pF, T=140°C
CL=1000pF, T=25°C
CL=1000pF, T=140°C
CL=4700pF, T=140°C
10
Figure 2. Quiescent Current vs Supply Voltage
VHB − VHS = 12V
IHBO − Operating Current (mA)
IDDO − Operating Current (mA)
G002
100
V DD = 12V
10
1
CL=0pF, T=−40°C
CL=0pF, T=25°C
CL=0pF, T=140°C
CL=1000pF, T=25°C
CL=1000pF, T=140°C
CL=4700pF, T=140°C
0.1
10
100
Frequency (kHz)
10
1
0.1
0.01
1000
CL=0pF, T=−40°C
CL=0pF, T=25°C
CL=0pF, T=140°C
CL=1000pF, T=25°C
CL=1000pF, T=140°C
CL=4700pF, T=140°C
10
Figure 4. IDD Operating Current vs Frequency
1000
6
HI, LI − Input Threshold Voltage (V)
T = 25°C
5
4
3
2
1
0
−1
100
Frequency (kHz)
Figure 5. Boot Voltage Operating Current vs
Frequency (HB To HS)
6
HI, LI − Input Threshold Voltage (V)
1000
Figure 3. IDD Operating Current vs Frequency
100
0.01
100
Frequency (kHz)
Rising
Falling
8
12
16
VDD − Supply Voltage (V)
20
Figure 6. Input Threshold vs Supply Voltage
VDD = 12V
5
4
3
2
1
0
−1
−40
Rising
Falling
−20
0
20
40
60
80
Temperature (°C)
100
120
140
Figure 7. Input Thresholds vs Temperature
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Typical Characteristics (continued)
0.32
0.2
IHO=ILO= 100mA
0.28
VOL − LO/HO Output Voltage (V)
VOH − LO/HO Output Voltage (V)
IHO=ILO= 100mA
0.24
0.2
0.16
0.12
VDD=VHB=8V
VDD=VHB=12V
VDD=VHB=16V
VDD=VHB=20V
0.08
0.04
0
−40
−20
0
20
40
60
80
Temperature (°C)
100
120
0.16
0.12
0.08
VDD=VHB=8V
VDD=VHB=12V
VDD=VHB=16V
VDD=VHB=20V
0.04
0
−40
140
Figure 8. LO and HO High-Level Output Voltage
vs Temperature
−20
0
20
40
60
80
Temperature (°C)
100
120
140
Figure 9. LO and HO Low-Level Output Voltage
vs Temperature
8
1.5
7.6
1.2
Hysteresis (V)
Threshold (V)
7.2
6.8
6.4
0.9
0.6
6
0.3
5.6
VDD Rising Threshold
HB Rising Threshold
5.2
−40
−20
0
20
40
60
80
Temperature (°C)
100
120
VDD UVLO Hysteresis
HB UVLO Hysteresis
0
−40
140
Figure 10. Undervoltage Lockout Threshold
vs Temperature
20
40
60
80
Temperature (°C)
100
120
140
G010
32
VDD=VHB=12V
32
28
24
20
16
12
TDLRR
TDLFF
TDHRR
TDHFF
8
4
0
−40
−20
0
20
40
60
80
Temperature (°C)
100
120
140
Figure 12. Propagation Delays vs Temperature
Propagation Delay (ns)
VDD=VHB=12V
36
Propagation Delay (ns)
0
Figure 11. Undervoltage Lockout Threshold Hysteresis
vs Temperature
40
10
−20
G009
24
16
TDLRR
TDLFF
TDHRR
TDHFF
8
0
−40
−20
0
20
40
60
80
Temperature (°C)
100
120
140
Figure 13. Propagation Delays vs Temperature
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Typical Characteristics (continued)
10
32
VDD=VHB=12V
T=25°C
8
24
Delay Matching (ns)
Propagation Delay (ns)
28
20
16
12
TDLRR
TDLFF
TDHRR
TDHFF
8
4
0
8
12
16
VDD=VHB − Supply Voltage (V)
6
4
2
0
−2
−40
20
TMon
TMoff
−20
0
20
40
60
80
Temperature (°C)
100
120
140
Figure 15. Delay Matching vs Temperature
Figure 14. Propagation Delays vs Supply Voltage
5
100
4
10
Diode Current (mA)
ILO, IHO − Output Current (A)
VDD=VHB=12V
3
2
1
0
1
0.1
0.01
Pull Down Current
Pull Up Current
0
2
4
6
8
VLO, VHO − Output Voltage (V)
10
12
0.001
500
550
G016
Figure 16. Output Current vs Output Voltage
600
650
700
750
Diode Voltage (mV)
800
850
G017
Figure 17. Diode Current vs Diode Voltage
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8 Detailed Description
8.1 Overview
The UCC27211A devices represent Texas Instruments’ latest generation of high-voltage gate drivers, which are
designed to drive both the high-side and low-side of N-Channel MOSFETs in a half- and full-bridge or
synchronous-buck configuration. The floating high-side driver can operate with supply voltages of up to 120 V,
which allows for N-Channel MOSFET control in half-bridge, full-bridge, push-pull, two-switch forward, and active
clamp forward converters.
The UCC27211A devices feature 4-A source and sink capability, industry best-in-class switching characteristics
and a host of other features listed in Table 1. These features combine to ensure efficient, robust and reliable
operation in high-frequency switching power circuits.
Table 1. UCC27211A Highlights
FEATURE
BENEFIT
4-A source and sink current with 0.9-Ω output resistance
High peak current ideal for driving large power MOSFETs with
minimal power loss (fast-drive capability at Miller plateau)
Input pins (HI and LI) can directly handle –10 VDC up to 20 VDC
Increased robustness and ability to handle undershoot and
overshoot can interface directly to gate-drive transformers without
having to use rectification diodes.
120-V internal boot diode
Provides voltage margin to meet telecom 100-V surge requirements
Switch node (HS pin) able to handle –18 V maximum for 100 ns
Allows the high-side channel to have extra protection from inherent
negative voltages caused by parasitic inductance and stray
capacitance
Robust ESD circuitry to handle voltage spikes
Excellent immunity to large dV/dT conditions
18-ns propagation delay with 7.2-ns rise time and 5.5-ns fall time
Best-in-class switching characteristics and extremely low-pulse
transmission distortion
2-ns (typ) delay matching between channels
Avoids transformer volt-second offset in bridge
Symmetrical UVLO circuit
Ensures high-side and low-side shut down at the same time
CMOS optimized threshold or TTL optimized thresholds with
increased hysteresis
Complementary to analog or digital PWM controllers; increased
hysteresis offers added noise immunity
In UCC27211A, the high side and low side each have independent inputs that allow maximum flexibility of input
control signals in the application. The boot diode for the high-side driver bias supply is internal to the
UCC27211A. The UCC27210A is the Pseudo-CMOS compatible input version and the UCC27211A is the TTL or
logic compatible version. The high-side driver is referenced to the switch node (HS), which is typically the source
pin of the high-side MOSFET and drain pin of the low-side MOSFET. The low-side driver is referenced to VSS,
which is typically ground. UCC27211A functions are divided into the input stages, UVLO protection, level shift,
boot diode, and output driver stages.
12
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8.2 Functional Block Diagram
2
HB
3
HO
4
HS
8
LO
7
VSS
UVLO
LEVEL
SHIFT
HI
5
VDD
1
UVLO
LI
6
8.3 Feature Description
8.3.1 Input Stages
The input stages provide the interface to the PWM output signals. The input impedance is 100-kΩ nominal and
input capacitance is approximately 2 pF. The 100 kΩ is a pulldown resistance to VSS (ground). The PseudoCMOS input structure has been designed to provide large hysteresis and at the same time to allows interfacing
to a multitude of analog or digital PWM controllers. In some CMOS designs, the input thresholds are determined
as a percentage of VDD. By doing so, the high-level input threshold can become unreasonably high and
unusable. The device recognizes the fact that VDD levels are trending downward and it therefore provides a
rising threshold with 5.0 V (typical) and falling threshold with 3.2 V (typical). The input hysteresis of the is 1.8 V
(typical).
The input stages of the UCC27211A have impedance of 70-kΩ nominal and input capacitance is approximately
2 pF. Pulldown resistance to VSS (ground) is 70 kΩ. The logic level compatible input provides a rising threshold of
2.3 V and a falling threshold of 1.6 V.
8.3.2 Undervoltage Lockout (UVLO)
The bias supplies for the high-side and low-side drivers have UVLO protection. VDD as well as VHB to VHS
differential voltages are monitored. The VDD UVLO disables both drivers when VDD is below the specified
threshold. The rising VDD threshold is 7.0 V with 0.5-V hysteresis. The VHB UVLO disables only the high-side
driver when the VHB to VHS differential voltage is below the specified threshold. The VHB UVLO rising threshold is
6.7 V with 1.1-V hysteresis.
8.3.3 Level Shift
The level shift circuit is the interface from the high-side input to the high-side driver stage which is referenced to
the switch node (HS). The level shift allows control of the HO output referenced to the HS pin and provides
excellent delay matching with the low-side driver.
8.3.4 Boot Diode
The boot diode necessary to generate the high-side bias is included in the UCC27211A family of drivers. The
diode anode is connected to VDD and cathode connected to VHB. With the VHB capacitor connected to HB and the
HS pins, the VHB capacitor charge is refreshed every switching cycle when HS transitions to ground. The boot
diode provides fast recovery times, low diode resistance, and voltage rating margin to allow for efficient and
reliable operation.
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Feature Description (continued)
8.3.5 Output Stages
The output stages are the interface to the power MOSFETs in the power train. High slew rate, low resistance and
high peak current capability of both output drivers allow for efficient switching of the power MOSFETs. The lowside output stage is referenced from VDD to VSS and the high side is referenced from VHB to VHS.
8.4 Device Functional Modes
The device operates in normal mode and UVLO mode. See the Undervoltage Lockout (UVLO) section for
information on UVLO operation mode. In the normal mode the output state is dependent on states of the HI and
LI pins. Table 2 lists the output states for different input pin combinations.
Table 2. Device Logic Table
LI PIN
HO (1)
L
L
L
L
L
H
L
H
H
L
H
L
H
H
H
H
HI PIN
(1)
(2)
HO is measured with respect to HS.
LO is measured with respect to VSS.
14
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
To affect fast switching of power devices and reduce associated switching power losses, a powerful gate driver is
employed between the PWM output of controllers and the gates of the power semiconductor devices. Also, gate
drivers are indispensable when it is impossible for the PWM controller to directly drive the gates of the switching
devices. With the advent of digital power, this situation will be often encountered because the PWM signal from
the digital controller is often a 3.3-V logic signal which cannot effectively turn on a power switch. Level shifting
circuitry is needed to boost the 3.3-V signal to the gate-drive voltage (such as 12 V) in order to fully turn on the
power device and minimize conduction losses. Traditional buffer drive circuits based on NPN/PNP bipolar
transistors in totem-pole arrangement, being emitter follower configurations, prove inadequate with digital power
because they lack level-shifting capability. Gate drivers effectively combine both the level-shifting and buffer-drive
functions. Gate drivers also find other needs such as minimizing the effect of high-frequency switching noise by
locating the high-current driver physically close to the power switch, driving gate-drive transformers, and
controlling floating power-device gates, reducing power dissipation and thermal stress in controllers by moving
gate charge power losses from the controller into the driver.
Finally, emerging wide band-gap power device technologies such as GaN based switches, which are capable of
supporting very high switching frequency operation, are driving very special requirements in terms of gate drive
capability. These requirements include operation at low VDD voltages (5 V or lower), low propagation delays and
availability in compact, low-inductance packages with good thermal capability. Gate-driver devices are extremely
important components in switching power, and they combine the benefits of high-performance, low-cost
component count and board-space reduction as well as simplified system design.
9.2 Typical Application
+12V
+100V
SECONDARY
SIDE
CIRCUIT
VDD
HB
DRIVE
HI
PWM
CONTROLLER
LI
CONTROL
HI
HO
HS
DRIVE
LO
LO
UCC27211A
VSS
ISOLATION
AND
FEEDBACK
UDG-13114
Figure 18. UCC27211A Typical Application Diagram
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Typical Application (continued)
+12V
+100V
VDD
HB
DRIVE
HI
PWM
CONTROLLER
LI
CONTROL
HI
SECONDARY
SIDE
CIRCUIT
HO
HS
DRIVE
LO
LO
UCC27211
VSS
+12V
VDD
+100V
HB
LI
CONTROL
HI
DRIVE
HI
HO
HS
DRIVE
LO
LO
UCC27211
Figure 19. UCC27211 Typical Application Diagram
9.2.1 Design Requirements
Table 3. Design Specifications
16
DESIGN PARAMETER
EXAMPLE VALUE
Supply voltage, VDD
12 V
Voltage on HS, VHS
0 V to 100 V
Voltage on HB, VHB
12 V to 112 V
Output current rating, IO
–4 A to 4 A
Operating frequency
500 kHz
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9.2.2 Detailed Design Procedure
9.2.2.1 Input Threshold Type
The UCC27211A has an input maximum voltage range from –10 V to 20 V. This increased robustness means
that both parts can be directly interfaced to gate drive transformers. The UCC27211A features TTL compatible
input threshold logic with wide hysteresis. The threshold voltage levels are low voltage and independent of the
VDD supply voltage, which allows compatibility with both logic-level input signals from microcontrollers as well as
higher-voltage input signals from analog controllers. See the Electrical Characteristics table for the actual input
threshold voltage levels and hysteresis specifications for the UCC27211A device.
9.2.2.2 VDD Bias Supply Voltage
The bias supply voltage to be applied to the VDD pin of the device should never exceed the values listed in the
Absolute Maximum Ratings table. However, different power switches demand different voltage levels to be
applied at the gate terminals for effective turnon and turnoff. With certain power switches, a positive gate voltage
may be required for turnon and a negative gate voltage may be required for turnoff, in which case the VDD bias
supply equals the voltage differential. With a wide operating range from 8 V to 17 V, the UCC27211A device can
be used to drive a variety of power switches, such as Si MOSFETs, IGBTs, and wide-bandgap power
semiconductors (such as GaN, certain types of which allow no higher than 6 V to be applied to the gate
terminals).
9.2.2.3 Peak Source and Sink Currents
Generally, the switching speed of the power switch during turnon and turnoff should be as fast as possible in
order to minimize switching power losses. The gate driver device must be able to provide the required peak
current for achieving the targeted switching speeds with the targeted power MOSFET. The system requirement
for the switching speed is typically described in terms of the slew rate of the drain-to-source voltage of the power
MOSFET (such as dVDS/dt). For example, the system requirement might state that a SPP20N60C3 power
MOSFET must be turned-on with a dVDS/dt of 20V/ns or higher with a DC bus voltage of 400 V in a continuousconduction-mode (CCM) boost PFC-converter application. This type of application is an inductive hard-switching
application and reducing switching power losses is critical. This requirement means that the entire drain-tosource voltage swing during power MOSFET turnon event (from 400 V in the OFF state to VDS(on) in on state)
must be completed in approximately 20 ns or less. When the drain-to-source voltage swing occurs, the Miller
charge of the power MOSFET (QGD parameter in SPP20N60C3 data sheet is 33 nC typical) is supplied by the
peak current of gate driver. According to power MOSFET inductive switching mechanism, the gate-to-source
voltage of the power MOSFET at this time is the Miller plateau voltage, which is typically a few volts higher than
the threshold voltage of the power MOSFET, VGS(TH).
To achieve the targeted dVDS/dt, the gate driver must be capable of providing the QGD charge in 20 ns or less. In
other words a peak current of 1.65 A (= 33 nC / 20 ns) or higher must be provided by the gate driver. The
UCC27211A gate driver is capable of providing 4-A peak sourcing current which clearly exceeds the design
requirement and has the capability to meet the switching speed needed. The 2.4× overdrive capability provides
an extra margin against part-to-part variations in the QGD parameter of the power MOSFET along with additional
flexibility to insert external gate resistors and fine tune the switching speed for efficiency versus EMI
optimizations. However, in practical designs the parasitic trace inductance in the gate drive circuit of the PCB will
have a definitive role to play on the power MOSFET switching speed. The effect of this trace inductance is to
limit the dI/dt of the output current pulse of the gate driver. In order to illustrate this, consider output current pulse
waveform from the gate driver to be approximated to a triangular profile, where the area under the triangle
(½ × IPEAK × time) would equal the total gate charge of the power MOSFET (QG parameter in SPP20N60C3
power MOSFET datasheet = 87 nC typical). If the parasitic trace inductance limits the dI/dt then a situation may
occur in which the full peak current capability of the gate driver is not fully achieved in the time required to deliver
the QG required for the power MOSFET switching. In other words the time parameter in the equation would
dominate and the IPEAK value of the current pulse would be much less than the true peak current capability of the
device, while the required QG is still delivered. Because of this, the desired switching speed may not be realized,
even when theoretical calculations indicate the gate driver is capable of achieving the targeted switching speed.
Thus, placing the gate driver device very close to the power MOSFET and designing a tight gate drive-loop with
minimal PCB trace inductance is important to realize the full peak-current capability of the gate driver.
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9.2.2.4 Propagation Delay
The acceptable propagation delay from the gate driver is dependent on the switching frequency at which it is
used and the acceptable level of pulse distortion to the system. The UCC27211A features 16-ns (typical)
propagation delays, which ensures very little pulse distortion and allows operation at very high-frequencies. See
the Electrical Characteristics table for the propagation and switching characteristics of the UCC27211A device.
9.2.2.5 Power Dissipation
Power dissipation of the gate driver has two portions as shown in Equation 1.
PDISS = PDC + PSW
(1)
The DC portion of the power dissipation is PDC = IQ × VDD where IQ is the quiescent current for the driver. The
quiescent current is the current consumed by the device to bias all internal circuits such as input stage, reference
voltage, logic circuits, protections, and also any current associated with switching of internal devices when the
driver output changes state (such as charging and discharging of parasitic capacitances, parasitic shoot-through,
and so forth). The UCC27211A features very low quiescent currents (less than 0.17 mA, refer to the Electrical
Characteristics table and contain internal logic to eliminate any shoot-through in the output driver stage. Thus the
effect of the PDC on the total power dissipation within the gate driver can be safely assumed to be negligible.
The power dissipated in the gate-driver package during switching (PSW) depends on the following factors:
• Gate charge required of the power device (usually a function of the drive voltage VG, which is very close to
input bias supply voltage VDD)
• Switching frequency
• Use of external gate resistors. When a driver device is tested with a discrete, capacitive load calculating the
power that is required from the bias supply is fairly simple. The energy that must be transferred from the bias
supply to charge the capacitor is given by Equation 2.
EG = ½CLOAD × VDD2
where
•
•
CLOAD is load capacitor
VDD is bias voltage feeding the driver
(2)
There is an equal amount of energy dissipated when the capacitor is charged and when it is discharged. This
leads to a total power loss given by Equation 3.
PG = CLOAD × VDD2 × fSW
where
•
fSW is the switching frequency
(3)
The switching load presented by a power MOSFET/IGBT is converted to an equivalent capacitance by examining
the gate charge required to switch the device. This gate charge includes the effects of the input capacitance plus
the added charge needed to swing the drain voltage of the power device as it switches between the ON and OFF
states. Most manufacturers provide specifications of typical and maximum gate charge, in nC, to switch the
device under specified conditions. Using the gate charge Qg, determine the power that must be dissipated when
switching a capacitor which is calculated using the equation QG = CLOAD × VDD to provide Equation 4 for power.
PG = CLOAD × VDD2 × fSW = QG × VDD × fSW
(4)
This power PG is dissipated in the resistive elements of the circuit when the MOSFET/IGBT is being turned on
and off. Half of the total power is dissipated when the load capacitor is charged during turnon, and the other half
is dissipated when the load capacitor is discharged during turnoff. When no external gate resistor is employed
between the driver and MOSFET/IGBT, this power is completely dissipated inside the driver package. With the
use of external gate-drive resistors, the power dissipation is shared between the internal resistance of driver and
external gate resistor.
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9.2.3 Application Curves
Figure 20. Negative 10-V Input
Figure 21. Step Input
Figure 22. Symmetrical UVLO
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10 Power Supply Recommendations
The bias supply voltage range for which the UCC27211A device is recommended to operate is from 8 V to 17 V.
The lower end of this range is governed by the internal undervoltage-lockout (UVLO) protection feature on the
VDD pin supply circuit blocks. Whenever the driver is in UVLO condition when the VDD pin voltage is below the
V(ON) supply start threshold, this feature holds the output low, regardless of the status of the inputs. The upper
end of this range is driven by the 20-V absolute maximum voltage rating of the VDD pin of the device (which is a
stress rating). Keeping a 3-V margin to allow for transient voltage spikes, the maximum recommended voltage for
the VDD pin is 17 V. The UVLO protection feature also involves a hysteresis function, which means that when the
VDD pin bias voltage has exceeded the threshold voltage and device begins to operate, and if the voltage drops,
then the device continues to deliver normal functionality unless the voltage drop exceeds the hysteresis
specification VDD(hys). Therefore, ensuring that, while operating at or near the 8-V range, the voltage ripple on the
auxiliary power supply output is smaller than the hysteresis specification of the device is important to avoid
triggering device shutdown. During system shutdown, the device operation continues until the VDD pin voltage
has dropped below the V(OFF) threshold, which must be accounted for while evaluating system shutdown timing
design requirements. Likewise, at system start-up the device does not begin operation until the VDD pin voltage
has exceeded the V(ON) threshold.
The quiescent current consumed by the internal circuit blocks of the device is supplied through the VDD pin.
Although this fact is well known, it is importatnt to recognize that the charge for source current pulses delivered
by the HO pin is also supplied through the same VDD pin. As a result, every time a current is sourced out of the
HO pin, a corresponding current pulse is delivered into the device through the VDD pin. Thus, ensure that a local
bypass capacitor is provided between the VDD and GND pins and located as close to the device as possible for
the purpose of decoupling is important. A lo-ESR, ceramic surface-mount capacitor is required. TI recommends
using a capacitor in the range 0.22 µF to 4.7 µF between VDD and GND. In a similar manner, the current pulses
delivered by the LO pin are sourced from the HB pin. Therefore a 0.022-µF to 0.1-µF local decoupling capacitor
is recommended between the HB and HS pins.
11 Layout
11.1 Layout Guidelines
To
•
•
•
•
•
•
•
•
•
improve the switching characteristics and efficiency of a design, the following layout rules must be followed.
Locate the driver as close as possible to the MOSFETs.
Locate the VDD – VSS and VHB-VHS (bootstrap) capacitors as close as possible to the device (see Figure 23).
Pay close attention to the GND trace. Use the thermal pad of the DRM package as GND by connecting it to
the VSS pin (GND). The GND trace from the driver goes directly to the source of the MOSFET, but must not
be in the high current path of the MOSFET drain or source current.
Use similar rules for the HS node as for GND for the high-side driver.
For systems using multiple and UCC27211A devices, TI recommends that dedicated decoupling capacitors
be located at VDD-VSS for each device.
Care must be taken to avoid placing VDD traces close to LO, HS, and HO signals.
Use wide traces for LO and HO closely following the associated GND or HS traces. A width of 60 to 100 mils
is preferable where possible.
Use as least two or more vias if the driver outputs or SW node must be routed from one layer to another. For
GND, the number of vias must be a consideration of the thermal pad requirements as well as parasitic
inductance.
Avoid LI and HI (driver input) going close to the HS node or any other high dV/dT traces that can induce
significant noise into the relatively high impedance leads.
A poor layout can cause a significant drop in efficiency or system malfunction, and it can even lead to decreased
reliability of the whole system.
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11.2 Layout Example
UCC2721x
Figure 23. UCC27211A PCB Layout Example
11.3 Thermal Considerations
The useful range of a driver is greatly affected by the drive-power requirements of the load and the thermal
characteristics of the package. For a gate driver to be useful over a particular temperature range, the package
must allow for efficient removal of the heat produced while keeping the junction temperature within rated limits.
The thermal metrics for the driver package are listed in Thermal Information. For detailed information regarding
the table, refer to the Application Note from Texas Instruments entitled Semiconductor and IC Package Thermal
Metrics (SPRA953). The UCC27211A device is offered in SOIC (8) and VSON (8). The Thermal Information
section lists the thermal performance metrics related to the SOT-23 package.
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12 Device and Documentation Support
12.1 Documentation Support
12.1.1 Related Documentation
The reference and link to additional information may be found at www.ti.com.
• Additional layout guidelines for PCB land patterns may be found in, QFN/SON PCB Attachment, Application
Brief (SLUA271)
12.2 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.3 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
12.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
UCC27211ADRMR
ACTIVE
VSON
DRM
8
3000
RoHS & Green
NIPDAUAG
Level-1-260C-UNLIM
-40 to 140
27211A
UCC27211ADRMT
ACTIVE
VSON
DRM
8
250
RoHS & Green
NIPDAUAG
Level-1-260C-UNLIM
-40 to 140
27211A
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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