XTR110
SBOS141C – JANUARY 1984 – REVISED SEPTEMBER 2009
PRECISION VOLTAGE-TO-CURRENT
CONVERTER/TRANSMITTER
FEATURES
APPLICATIONS
● 4mA TO 20mA TRANSMITTER
● SELECTABLE INPUT/OUTPUT RANGES:
0V to +5V, 0V to +10V Inputs
0mA to 20mA, 5mA to 25mA Outputs
Other Ranges
● 0.005% MAX NONLINEARITY, 14 BIT
● PRECISION +10V REFERENCE OUTPUT
● SINGLE-SUPPLY OPERATION
● WIDE SUPPLY RANGE: 13.5V to 40V
● INDUSTRIAL PROCESS CONTROL
● PRESSURE/TEMPERATURE TRANSMITTERS
● CURRENT-MODE BRIDGE EXCITATION
● GROUNDED TRANSDUCER CIRCUITS
● CURRENT SOURCE REFERENCE FOR DATA
ACQUISITION
● PROGRAMMABLE CURRENT SOURCE FOR
TEST EQUIPMENT
● POWER PLANT/ENERGY SYSTEM
MONITORING
DESCRIPTION
The XTR110 is a precision voltage-to-current converter
designed for analog signal transmission. It accepts inputs
of 0 to 5V or 0 to 10V and can be connected for outputs of
4mA to 20mA, 0mA to 20mA, 5mA to 25mA, and many other
commonly used ranges.
A precision on-chip metal film resistor network provides input
scaling and current offsetting. An internal 10V voltage reference can be used to drive external circuitry.
16 +VCC
VREF Force 15
R9
+10V
Reference
VREF Sense 12
1
R8
13 Source
Sense
VREF Adjust 11
VIN1 (10V)
4
VREF In
3
A2
14
7
R1
R5
The XTR110 is available in 16-pin plastic DIP, ceramic DIP
and SOL-16 surface-mount packages. Commercial and industrial temperature range models are available.
R3
6
R4
8
R7
5
R6
Common
2
Gate
Drive
Offset
(zero)
Adjust
A1
R2
VIN2 (5V)
Source
Resistor
Span
Adjust
10 4mA
Span
9
16mA
Span
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
Copyright © 1984-2009, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
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ABSOLUTE MAXIMUM RATINGS(1)
Power Supply, +VCC ............................................................................ 40V
Input Voltage, VIN1, VIN2, VREF IN ....................................................... +VCC
See text regarding safe negative input voltage range.
Storage Temperature Range: A, B ................................ –55°C to +125°C
K, U .................................. –40°C to +85°C
Output Short-Circuit Duration, Gate Drive
and VREF Force ................................ Continuous to common and +VCC
Output Current Using Internal 50Ω Resistor ................................... 40mA
NOTE: (1) Stresses above these ratings may cause permanent damage.
Exposure to absolute maximum conditions for extended periods may degrade
device reliability.
ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Texas Instruments
recommends that all integrated circuits be handled with appropriate
precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to
complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could
cause the device not to meet its published specifications.
PACKAGE/ORDERING INFORMATION(1)
PRODUCT
PACKAGE-LEAD
PACKAGE
DESIGNATOR
TEMPERATURE
RANGE
XTR110AG
XTR110BG
XTR110KP
XTR110KU
DIP-16 Ceramic
DIP-16 Ceramic
DIP-16 Plastic
SOL-16 Surface-Mount
JD
JD
N
DW
–40°C to +85°C
–40°C to +85°C
0°C to +70°C
0°C to +70°C
NOTE: (1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI website at www.ti.com.
PIN CONFIGURATION
TOP VIEW
2
Source Resistor
1
16 +VCC
Common
2
15 VREF Force
VREF In
3
14 Gate Drive
VIN1 (10V)
4
13 Source Sense
VIN2 (5V)
5
12 VREF Sense
Zero Adjust
6
11 VREF Adjust
Zero Adjust
7
10 4mA Span
Span Adjust
8
9
16mA Span
XTR110
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SBOS141C
ELECTRICAL CHARACTERISTICS
At TA = +25°C and VCC = +24V and RL = 250Ω**, unless otherwise specified.
XTR110AG, KP, KU
PARAMETER
TRANSMITTER
Transfer Function
Input Range: VIN1(5)
VIN2
Current, IO
Nonlinearity
Offset Current, IOS
Initial
vs Temperature
vs Supply, VCC
Span Error
Initial
vs Temperature
vs Supply, VCC
Output Resistance
Input Resistance
Dynamic Response
Settling Time
CONDITIONS
MIN
Specified Performance
Specified Performance
Specified Performance(1)
Derated Performance(1)
16mA/20mA Span(2)
IO = 4mA(1)
0
0
4
0
(1)
(1)
(1)
POWER SUPPLY
Input Voltage, VCC
Quiescent Current
TEMPERATURE RANGE
Specification: AG, BG
KP, KU
Operating: AG, BG
KP, KU
MAX
MIN
TYP
MAX
UNITS
IO = 10 [(VREFIn/16) + (VIN1/4) + (VIN2/2)] /RSPAN
+10
*
+5
*
20
*
40
*
0.01
0.025
0.002
*
*
*
*
0.005
V
V
mA
mA
% of Span
0.2
0.0003
0.0005
0.4
0.005
0.005
0.02
*
*
0.1
0.003
*
% of Span
% of Span/°C
% of Span/V
0.3
0.0025
0.003
10 x 109
27
22
19
0.6
0.005
0.005
0.05
0.0009
*
*
*
*
*
0.2
0.003
*
% of Span
% of Span/°C
% of Span/V
Ω
kΩ
kΩ
kΩ
IO = 20mA
(1)
(1)
(1)
From Drain of FET (QEXT)(3)
VIN1
VIN2
VREF In
To 0.1% of Span
To 0.01% of Span
15
20
1.3
Slew Rate
VOLTAGE REFERENCE
Output Voltage
vs Temperature
vs Supply, VCC
vs Output Current
vs Time
Trim Range
Output Current
TYP
XTR110BG
+9.95
Line Regulation
Load Regulation
Specified Performance
+10
35
0.0002
0.0005
100
–0.100
10
+13.5
Excluding IO
3
–40
0
–55
–25
µs
µs
mA/µs
*
*
*
+10.05
50
0.005
0.01
+9.98
+0.25
*
*
+40
4.5
*
+85
+70
+125
+85
*
15
*
*
*
+10.02
30
*
*
*
V
ppm/°C
%/V
%/mA
ppm/1k hrs
V
mA
*
*
V
mA
*
*
*
*
°C
°C
°C
°C
*
* Specifications same as AG/KP grades. ** Specifications apply to the range of RL shown in Typical Performance Curves.
NOTES: (1) Including internal reference. (2) Span is the change in output current resulting from a full-scale change in input voltage. (3) Within compliance range limited
by (+VCC – 2V) +VDS required for linear operation of the FET. (4) For VREF adjustment circuit see Figure 3. (5) For extended IREF drive circuit see Figure 4. (5) Unit may
be damaged. See Input Voltage Range section.
XTR110
SBOS141C
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3
TYPICAL PERFORMANCE CURVES
TA = +25°C, VCC = 24VDC, RL = 250Ω, unless otherwise noted.
VREF LINE REGULATION vs FREQUENCY
IO POWER SUPPLY REGULATION vs FREQUENCY
10
∆ IO /∆ VCC (% of span/V)
10
∆ VREF/∆ VCC (%/V)
1
0.1
0.01
0.001
1
0.1
0.01
0.001
1
10
100
1k
10k
100k
1
10
Ripple Frequency (Hz)
JUNCTION TEMPERATURE RISE
vs VREF OUTPUT CURRENT
10k
100k
TOTAL OUTPUT ERROR vs TEMPERATURE
Max. Temp. Rise
for +85°C Ambient
80
Max. TJ = +175°C
θJA = 70°C/W
60
Error (% of span)
Junction Temperature Rise
Above Ambient (°C)
1k
2
100
VCC = +40V
40
VCC = +24V
20
1
AG
0
BG
–1
AG
VCC = +15V
–2
0
0
2
6
4
8
–40
10
–20
ICC vs TEMPERATURE
20
40
60
80
MAXIMUM RL vs VCC
5
2500
IO = 20mA
4
2000
IO MAX = 20mA
3
RL (Ω)
ICC (mA) (excluding IO)
0
Temperature (°C)
VREF Output Current (mA)
(IOUT has minimal effect on TJ)
IO = 4mA
2
1500
1000
1
IO MAX = 40mA
500
0
0
–40
–20
0
20
40
60
80
15
Temperature (°C)
4
100
Ripple Frequency (Hz)
20
25
30
35
40
+VCC (V)
XTR110
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SBOS141C
TYPICAL PERFORMANCE CURVES (Continued)
At TA = +25°C, VCC = 24VDC, RL = 250Ω, unless otherwise noted.
PULSE RESPONSE
SETTLING TIME WITH NEG VIN STEP
VIN
VIN
0V
0V
0V
IO Error
(0.01% of
Span/Box)
IO
into
500Ω
0V
SETTLING TIME WITH POS VIN STEP
VIN
0V
0V
IO Error
(0.01% of
Span/Box)
XTR110
SBOS141C
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5
APPLICATIONS INFORMATION
Figure 1 shows the basic connections required for 0V to 10V
input and 4ma to 20mA output. Other input voltage and
output current ranges require changes in connections of pins
3, 4, 5, 9 and 10 as shown in the table of Figure 1.
have a voltage rating equal or greater than the maximum
power supply voltage. Various recommended types are shown
in Table I.
MANUFACTURER
PART NO.
BVDSS(1)
BVGS(1)
PACKAGE
Ferranti
ZVP1304A
ZVP1304B
ZVP1306A
ZVP1306B
40V
40V
60V
60V
20V
20V
20V
20V
TO-92
TO-39
TO-92
TO-39
The complete transfer function of the XTR110 is:
10
IO =
(VREF IN)
16
+
(VIN1)
+
4
(VIN2)
2
(1)
RSPAN
RSPAN is the total impedance seen at the emitter of the
internal NPN transistor. This impedance varies depending
on how pins 8, 9 and 10 are configured. Typical operating
region configurations are shown in Figure 1. An external
RSPAN can be connected for different output current ranges
as described later.
EXTERNAL TRANSISTOR
An external pass transistor, QEXT, is required as shown in
Figure 1. This transistor conducts the output signal current.
A P-channel MOSFET transistor is recommended. It must
International
Rectifier
IRF9513
60V
20V
TO-220
Motorola
MTP8P08
80V
20V
TO-220
RCA
RFL1P08
RFT2P08
80V
80V
20V
20V
TO-39
TO-220
Siliconix
(preferred)
VP0300B
VP0300L
VP0300M
VP0808B
VP0808L
VP0808M
30V
30V
30V
80V
80V
80V
40V
40V
40V
40V
40V
40V
TO-39
TO-92
TO-237
TO-39
TO-92
TO-237
Supertex
VP1304N2
VP1304N3
VP1306N2
VP1306N3
40V
40V
60V
60V
20V
20V
20V
20V
TO-220
TO-92
TO-220
TO-92
NOTE: (1) BVDSS—Drain-source breakdown voltage. BVGS—Gate-source
breakdown voltage.
TABLE I. Available P-Channel MOSFETs.
+VCC
Force 15
R9 50Ω
R8
500Ω
+10V
Reference
11
+VCC
13.5 to 40V
1
13
4
VIN
0 to 10V
1µF
16
Sense 12
VREF
Adj.
+
IO
Short
Connection
(see text)
14
QEXT
P-Channel
MOSFET
(see text)
IO/10
3
R1
R2
15kΩ
R5
16.25kΩ
5kΩ
7
R3
20kΩ
6
Zero
Adjust
IO
4 to 20mA
R4
10kΩ
8
IO/10
5
R7 6250Ω
2
10
9
RL
(250Ω typ)
Span Adjust
4mA Span
16mA Span
R6 1562.5Ω
INPUT
OUTPUT
RANGE (V) RANGE (mA)
0-10
2-10
0-10
0-10
0-5
1-5
0-5
0-5
0-20
4-20
4-20
5-25
0-20
4-20
4-20
5-25
PIN 3
PIN 4
PIN 5
PIN 9
PIN 10
Com
Com
+10V Ref
+10V Ref
Com
Com
+10V Ref
+10V Ref
Input
Input
Input
Input
Com
Com
Com
Com
Com
Com
Com
Com
Input
Input
Input
Input
Com
Com
Com
Com
Com
Com
Com
Com
Com
Com
Open
Com
Com
Com
Open
Com
FIGURE 1. Basic Circuit Connection.
6
XTR110
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SBOS141C
If the supply voltage, +VCC, exceeds the gate-to-source
breakdown voltage of QEXT, and the output connection
(drain of QEXT) is broken, QEXT could fail. If the gate-tosource breakdown voltage is lower than +VCC, QEXT can be
protected with a 12V zener diode connected from gate to
source.
+VCC
16
PMAX = (+VCC) IFS
13
XTR110
TIP30B
etc.
14
Two PNP discrete transistors (Darlington-connected) can be
used for QEXT—see Figure 2. Note that an additional capacitor is required for stability. Integrated Darlington transistors
are not recommended because their internal base-emitter
resistors cause excessive error.
TRANSISTOR DISSIPATION
Maximum power dissipation of QEXT depends on the power
supply voltage and full-scale output current. Assuming that
the load resistance is low, the power dissipated by QEXT is:
47nF
1
2
0.047µF
2N2907
etc.
RL
Common
FIGURE 2. QEXT Using PNP Transistors.
(2)
+VCC
The transistor type and heat sinking must be chosen according to the maximum power dissipation to prevent overheating. See Table II for general recommendations.
VREF Force
15
VREF Sense
12
VREF Adjust
VREF
PACKAGE TYPE
TO-92
TO-237
TO-39
TO-220
TO-3
R
20kΩ
ALLOWABLE POWER DISSIPATION
Lowest: Use minimum supply and at +25°C.
Acceptable: Trade-off supply and temperature.
Good: Adequate for majority of designs.
Excellent: For prolonged maximum stress.
Use if hermetic package is required.
(VREF IN)
16
+
(VIN1)
4
+
(VIN2)
2
11
XTR110
(1)
2 Common
NOTE: (1) RS gives higher resolution with reduced
range, set RS = 0Ω for larger range.
TABLE II. External Transistor Package Type and
Dissipation.
VA1 =
RS
16
Adjust Range
±5% Optimum
INPUT VOLTAGE RANGE
The internal op amp A1 can be damaged if its non-inverting
input (an internal node) is pulled more than 0.5V below
common (0V). This could occur if input pins 3, 4 or 5 were
driven with an op amp whose output could swing negative
under abnormal conditions. The voltage at the input of A1 is:
IOUT
FIGURE 3. Optional Adjustment of Reference Voltage.
QREF
+10VREF
Force
15
Sense
12
16
+VCC
XTR110
(3)
2
This voltage should not be allowed to go more negative than
–0.5V. If necessary, a clamp diode can be connected from
the negative-going input to common to clamp the input
voltage.
For 100mA with VCC up to
40V use 2N3055 for QREF.
FIGURE 4. Increasing Reference Current Drive.
COMMON (Ground)
Careful attention should be directed toward proper connection of the common (grounds). All commons should
be joined at one point as close to pin 2 of the XTR110 as
possible. The exception is the IOUT return. It can be
returned to any point where it will not modulate the
common at pin 2.
VOLTAGE REFERENCE
The reference voltage is accurately regulated at pin 12
(VREF SENSE). To preserve accuracy, any load including pin
3 should be connected to this point. The circuit in Figure 3
shows adjustment of the voltage reference.
The current drive capability of the XTR110’s internal reference is 10mA. This can be extended if desired by adding an
external NPN transistor shown in Figure 4.
OFFSET (ZERO) ADJUSTMENT
The offset current can be adjusted by using the potentiometer, R1, shown in Figure 5. Set the input voltage to zero and
then adjust R1 to give 4mA at the output. For spans starting
XTR110
SBOS141C
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7
+
1
12
Output Current, IO (mA)
Third Wire
16
24V
–
XTR110
4
0V
to
+10V
S
13
3
14
5
7
6
8
2
9
G
15
R1
10
R3
Zero Adjust ±1.8% of Span
5
RL
250Ω
1V
to
+5V
Out
Span Adjust ±0.45%
as shown
16mA Span
D
4mA to
20mA Out
R4
R1 = 100kΩ
R2 = 100kΩ
R3 = 49.9kΩ
R4 = 31.6Ω
20
1µF Tantalum
15
4mA Offset
−2.5
0
2
4
6
8
10
Input Voltage, VIN1 (V)
R2
Offset
Adjust
FIGURE 6. Zero and Span of 0V to +10V Input, 4mA to
20mA Output Configuration (see Figure 5).
Span Adjust
FIGURE 5. Offset and Span Adjustment Circuit for 0V to
+10V Input, 4mA to 20mA Output.
Output Current, IO (mA)
20
at 0mA, the following special procedure is recommended:
set the input to a small nonzero value and then adjust R1 to
the proper output current. When the input is zero the output
will be zero. Figures 6 and 7 show graphically how offset is
adjusted.
SPAN ADJUSTMENT
The span is adjusted at the full-scale output current using the
potentiometer, R2, shown in Figure 5. This adjustment is
interactive with the offset adjustment, and a few iterations
may be necessary. For the circuit shown, set the input
voltage to +10V full scale and adjust R2 to give 20mA fullscale output. Figures 6 and 7 show graphically how span is
adjusted.
The values of R2, R3, and R4 for adjusting the span are
determined as follows: choose R4 in series to slightly decrease the span; then choose R2 and R3 to increase the span
to be adjustable about the center value.
LOW TEMPERATURE COEFFICIENT OPERATION
Although the precision resistors in the XTR110 track within
1ppm/°C, the output current depends upon the absolute
temperature coefficient (TC) of any one of the resistors, R6,
R7, R8, and R9. Since the absolute TC of the output current
can have 20ppm/°C, maximum, the TC of the output current
can have 20ppm/°C drift. For low TC operation, zero TC
resistors can be substituted for either the span resistors (R6
or R7) or for the source resistor (R9) but not both.
8
See values in Figure 6.
In addition, connect
pins 9 and 10 together.
15
Span Adjust
20mA Span
10
5
Zero Adjust
0mA Offset
0
2
4
6
8
10
Input Voltage, VIN1 (V)
FIGURE 7. Zero and Span of 0V to +10VIN, 0mA to 20mA
Output Configuration (see Figure 5).
EXTENDED SPAN
For spans beyond 40mA, the internal 50Ω resistor (R9) may
be replaced by an external resistor connected between pins
13 and 16.
Its value can be calculated as follows:
REXT = R9 (SpanOLD/SpanNEW)
Since the internal thin-film resistors have a 20% absolute
value tolerance, measure R9 before determining the final
value of REXT. Self-heating of REXT can cause nonlinearity.
Therefore, choose one with a low TC and adequate power
rating. See Figure 10 for application.
XTR110
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SBOS141C
TYPICAL APPLICATIONS
The XTR110 is ideal for a variety of applications requiring
high noise immunity current-mode signal transmission. The
precision +10V reference can be used to excite bridges and
transducers. Selectable ranges make it very useful as a
precision programmable current source. The compact design
and low price of the XTR110 allow versatility with a
minimum of external components and design engineering
expense.
Figures 8 through 10 show typical applications of the
XTR110.
+15V
15
16
12
VIN
A4
1
+10V
Reference
11
13
4
14
3
7
T1
6
R9
15kΩ
Offset
Adjust
R1
2Ω
R10
1kΩ
8
A3
R3
20kΩ
5
10
2
9
R5
2MΩ
R6
402Ω
R7
4.75kΩ
R8 200Ω
Fine Trim
RH 50kΩ
Coarse Trim
Span
Adjust
IO
A2
T3
A1
T2
R4
2kΩ
R2
4.99Ω
–15V
200
IO (mA)
VIN (V)
0
5
–200
10
R1, R2: Low TC resistors to dissipate 0.32W continuous power.
For other current ranges, scale both resistors proportionately.
R8, R10, R11: 10-turn trimpots for greatest sensitivity.
R6, R7: Low TC resistors.
A1 - A4: 1/4 LM324 (powered by ±15V).
T1: International Rectifier IR9513(1).
T2: International Rectifier IR513(1).
T3: International Rectifier IRFF9113(1).
NOTE: (1) Or other adequate power rating MOS transistor.
FIGURE 8. ±200mA Current Pump.
XTR110
SBOS141C
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9
Isolation Barrier
+15V
Isolated Power
Supply (722)
1µF
–15V +15V
–15V +15V
15
16
12
1
3
15
0 to –10V
7
ISO122
13
XTR110
S
4
8
14
5
16
9
G
4mA to 20mA Out
D
2
RL
VL
FIGURE 9. Isolated 4mA to 20mA Channel.
+24V
15
REXT
0.1Ω
16
12
4
0V to +10V
13
XTR110
S
3
5
14
9
2
G
0A to
10A Out
D
See extended span section.
FIGURE 10. 0A to 10A Output Voltage-to-Current Converter.
10
XTR110
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SBOS141C
Revision History
DATE
REVISION PAGE
9/09
C
6
SECTION
Front Page
Applications Information
DESCRIPTION
Changed front page to standard format.
Changed text in third paragraph.
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
XTR110
SBOS141C
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11
PACKAGE OPTION ADDENDUM
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7-Oct-2021
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
(2)
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
(3)
(4/5)
(6)
XTR110AG
NRND
CDIP SB
JD
16
1
RoHS & Green
Call TI
N / A for Pkg Type
-40 to 85
XTR110AG
XTR110BG
NRND
CDIP SB
JD
16
1
RoHS & Green
Call TI
N / A for Pkg Type
-40 to 85
XTR110BG
XTR110KP
ACTIVE
PDIP
N
16
25
RoHS & Green
NIPDAU
N / A for Pkg Type
-40 to 85
XTR110KP
XTR110KPG4
ACTIVE
PDIP
N
16
25
RoHS & Green
NIPDAU
N / A for Pkg Type
-40 to 85
XTR110KP
XTR110KU
ACTIVE
SOIC
DW
16
40
RoHS & Green
NIPDAU
Level-3-260C-168 HR
-40 to 85
XTR110KU
XTR110KU/1K
ACTIVE
SOIC
DW
16
1000
RoHS & Green
NIPDAU
Level-3-260C-168 HR
-40 to 85
XTR110KU
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
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RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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