BCX38C

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS BCX38A BCX38B BCX38C TO-92 Plastic Package E BC ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Peak Pulse Current Collector Current Continuous Power Dissipation @ Ta=25ºC Operating and Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO ICM IC PD Tj, Tstg VALUE 60 80 10 2 800 625 - 55 to +200 UNITS V V V A mA mW ºC ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) TEST CONDITION DESCRIPTION SYMBOL IC=10mA, IB=0 VCEO (sus) Collector Emitter Sustaining Voltage Collector Base Voltage Emitter Base Voltage Collector Cut off Current Emitter Cut off Current Collector Emitter Saturation Voltage Base Emitter On Voltage DC Current Gain VCBO VEBO ICBO IEBO *VCE(sat) *VBE(on) *hFE IC=10µA, IE=0 IE=10µA, IC=0 VCB=60V, IE = 0 VEB=8V, IC = 0 IC=800mA, IB=8mA IC=800mA, VCE=5V BCX38A IC=100mA, VCE=5V IC=500mA, VCE=5V BCX38B IC=100mA, VCE=5V IC=500mA, VCE=5V BCX38C IC=100mA, VCE=5V IC=500mA, VCE=5V *Pulsed Conditions: Pulse Width = 300µ s, Duty Cycle