CMBT8599

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT8598 CMBT8599 GENERAL PURPOSE TRANSISTOR P–N–P transistor Marking CMBT8598 = 2K CMBT8599 = 2W PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.c.) Total power dissipation at Tamb = 25°C D.C. current gain –IC = 100 mA; –VCE = 5 V –V CBO –V CEO –V EBO –IC Ptot hFE CMBT 8598 max. 60 max. 60 max. max. max. min. 75 8599 80 V 80 V V mA mW 75 5 500 225 RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) –V CBO Collector–emitter voltage (open base) –V CEO Emitter–base voltage (open collector) –V EBO Collector current (d.c.) –IC max. max. max. max. 60 60 5 500 80 V 80 V V mA Continental Device India Limited Data Sheet Page 1 of 3 CMBT8598 CMBT8599 Total power dissipation at Tamb = 25°C Ptot Storage temperature Junction temperature THERMAL CHARACTERISTICS Tj = P (Rth j–t + Rth s–a) + Tamb Thermal resistance from junction to ambient max Tstg Tj 225 –55 to +150 max. 150 mW °C °C Rth j–a 556 °C/mW CHARACTERISTICS (at TA = 25°C unless otherwise specified) Collector–emitter breakdown voltage –V(BR)CEO min. 60 –IC = 1 mA; –IE = 0 Collector–base breakdown voltage –V(BR)CBO min. 60 –IC = 10 mA; –IE = 0 Emitter–base breakdown voltage –V(BR)EBO min. 5 –IE = 10 mA; –IC = 0 Collector cut–off current –I CBO max. 50 –VCB = 20 V; –IE = 0 Emitter cut–off current –I EBO max. 50 –VBE = 3 V; –IC = 0 Output capacitance at f = 100 kHz Cc max. 4.5 IE = 0; –VCB = 5 V Input capacitance at f = 100 kHz Ce max. 30 IC = 0; –VBE = 0.5 V Saturation voltages –IC = 100 mA; –IB = 5 mA Base emitter voltage IC = 1 mA; VCE = 5 V; IC = 10 mA; VCE = 5 V D.C. current gain –IC = 1 mA; –VCE = 5 V –IC = 10 mA; –VCE = 5 V –IC = 100 mA; –VCE = 5 V Noise figure at RS = 1 kW –IC = 100 mA; –VCE = 5 V f = 10 Hz to 15.7 kHz 80 80 5 50 50 V V V nA nA 4.5 pF 30 pF –VCEsat VBE(on) max. max. max. min. max. min. min. 0.4 0.7 100 300 100 75 0.4 V -V 0.9 V hFE hFE hFE NF max. 5 dB Transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz fT min. max. 150 225 MHz MHz Continental Device India Limited Data Sheet Page 2 of 3 Customer Notes Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. CDIL is a registered Trademark of Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119 email@cdil.com www.cdilsemi.com Continental Device India Limited Data Sheet Page 3 of 3