NE68139-T1

SILICON TRANSISTOR NE681 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST VCE = 3 V, IC = 5 mA MSG 20 3.0 MAG 10 Associated Gain, Maximum Stable Gain and Maximum Available Gain, GA, MSG, MAG (dB) s ber m TE: art nu e not O . ar E N ing p ign t s EA S l o w hee ew de r PL ta s r n ol da ef DESCRIPTION e fo o Th this nded f s offic e from mme sal eco e call r s lea ls: P i eta 135 d E68 39R N 6 81 NE E B 00 (CHIP) 35 (MICRO-X) NEC's NE681 series of NPN epitaxial silicon transistors are designed for low noise, high gain, low cost amplifier applications. Both the chip and micro-x versions are suitable for amplifier applications up to 4 GHz. The NE681 die is also available in six different low cost plastic surface mount package styles. NE681's unique device characteristics allow you to use a single matching point to simultaneously achieve both low noise and high gain. 18 (SOT 343 STYLE) 19 (3 PIN ULTRA SUPER MINI MOLD) NOISE FIGURE, GAIN MSG AND MAG vs. FREQUENCY 30 (SOT 323 STYLE) 33 (SOT 23 STYLE) Minimum Noise Figure, NF min (dB) 39 (SOT 143 STYLE) 39R (SOT 143R STYLE) 2.0 NF GA 0 1.0 0.5 1.0 2.0 3.0 Frequency, f (GHz) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Date Published: June 28, 2005 NE681 SERIES ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE PARAMETERS AND CONDITIONS Gain Bandwidth Product at VCE = 8 V, IC = 20 mA VCE = 3 V, IC = 7 mA Noise Figure at VCE = 8 V, IC = 7 mA, f = 1 GHz f = 2 GHz Associated Gain at VCE = 8 V, IC = 7 mA, f = 1 GHz f = 2 GHz Insertion Power Gain at VCE = 8 V, IC = 20 mA, f = 1 GHz f = 2 GHz Forward Current Gain2 at VCE = 8 V, IC = 20 mA VCE = 3 V, IC = 7 mA Collector Cutoff Current at VCB = 10 V, IE = 0 mA Emitter Cutoff Current at VEB = 1 V, IC = 0 mA Feedback Capacitance at VCB = 3 V, IE = 0 mA, f = 1 MHz VCB = 10 V, IE = 0 mA, f = 1 MHz Total Power Dissipation NE68100 00 (CHIP) UNITS MIN TYP MAX GHz GHz dB dB dB dB dB dB 9.0 NE68118 NE68119 NE68130 2SC5012 2SC5007 2SC4227 18 19 30 MIN TYP MAX MIN TYP MAX MIN TYP MAX 9.0 7.0 1.2 1.6 2.3 14 12 17 11 100 250 13 15 9 100 250 80 µA µA pF pF mW 1.0 1.0 1.0 1.0 0.45 0.2 0.7 80 600 0.25 0.8 833 150 1000 100 833 150 160 1.0 1.0 0.9 0.45 40 240 1.0 1.0 0.9 2.5 1.4 1.8 14 10 14 8 7.0 1.5 1.6 13.5 9 13 7.5 SYMBOLS fT NF GNF |S21E|2 9 50 hFE 50 ICBO IEBO CRE3 RTH (J-A) PT Thermal Resistance (Junction to Ambient) °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE PARAMETERS AND CONDITIONS Gain Bandwidth Product at VCE = 8 V, IC = 20 mA VCE = 3 V, IC = 7 mA Noise Figure at VCE = 8 V, IC = 7 mA, f = 1 GHz f = 2 GHz Associated Gain at VCE = 8 V, IC = 7 mA, f = 1 GHz f = 2 GHz Insertion Power Gain at VCE = 8 V, IC = 20 mA, f = 1 GHz f = 2 GHz Forward Current Gain2 at VCE= 8 V, IC = 20 mA VCE = 3 V, IC = 7 mA Collector Cutoff Current at VCB = 10 V, IE = 0 mA Emitter Cutoff Current at VEB = 1 V, IC = 0 mA Feedback Capacitance at VCB = 10 V, IE = 0 mA, f = 1 MHz Thermal Resistance (Junction to Ambient) Total Power Dissipation µA µA pF °C/W mW 0.35 NE68133 NE68135 NE68139/39R 2SC3583 2SC3604 2SC4094 33 35 39 MIN TYP MAX MIN TYP MAX MIN TYP MAX 9.0 1.2 2 1.6 13 12 11 12.5 7 250 1.0 1.0 0.9 625 200 0.2 15 8.5 250 1.0 1.0 0.7 590 295 0.25 50 100 200 1.0 1.0 0.8 625 200 2.3 13.5 9.0 9.0 1.2 2 SYMBOLS fT NF GNF UNITS GHz GHz dB dB dB dB dB dB |S21E|2 9 50 11 100 hFE ICBO IEBO CRE3 RTH (J-A) PT 50 100 Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed (PW ≤ 350 ms, duty cycle ≤ 2 %). 3. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. NE681 SERIES ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS VCBO VCEO VEBO IC TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Operating Junction Temperature Storage Temperature UNITS V V V mA °C °C RATINGS 20 10 1.5 65 1502 -55 to +1503 NE68100 TYPICAL NOISE PARAMETERS (TA = 25°C) FREQ. (MHz) 500 1000 2000 4000 NFOPT (dB) 1.3 1.45 2.1 3.25 GA (dB) 26.42 20.54 14.41 7.76 ΓOPT MAG 0.20 0.20 0.22 0.42 ANG 91 148 178 -115 Rn/50 0.20 0.21 0.51 0.85 VCE = 8 V, IC = 7 mA Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. TJ for NE68135 and NE68100 is 200°C. 3. Maximum storage temperature for the NE68135 is -65 to +150°C. NE68130 TYPICAL NOISE PARAMETERS (TA = 25°C) FREQ. (MHz) NFOPT (dB) 1.48 1.90 2.15 2.70 1.10 1.26 1.40 1.80 2.22 2.75 GA (dB) 10.23 10.15 9.00 4.46 14.69 12.73 11.29 7.40 6.14 4.89 ΓOPT MAG 0.74 0.72 0.69 0.66 0.65 0.60 0.56 0.53 0.47 0.49 ANG 43 79 99 126 45 80 99 123 166 -166 Rn/50 1.35 0.92 0.60 0.38 0.42 0.30 0.24 0.17 0.12 0.08 NE68119 TYPICAL NOISE PARAMETERS (TA = 25°C) FREQ. (MHz) NFOPT (dB) GA (dB) ΓOPT MAG 0.73 0.74 0.70 0.66 0.59 0.56 0.50 0.49 0.40 0.38 0.39 0.36 0.37 0.31 0.30 0.33 0.32 0.36 0.36 0.28 0.28 0.28 0.28 0.33 0.44 ANG 42 72 90 43 48 89 131 39 68 87 134 165 43 71 89 139 166 -163 39 64 81 130 158 -166 -141 Rn/50 1.70 1.01 0.78 0.46 0.35 0.30 0.16 0.28 0.17 0.14 0.08 0.11 0.20 0.15 0.13 0.09 0.11 0.13 0.22 0.16 0.14 0.11 0.12 0.14 0.16 VCE = 2.5 V, IC = 0.3 mA 500 800 1000 1500 500 800 1000 1500 2000 2500 VCE = 2.5 V, IC = 0.3 mA 500 1.24 9.26 800 1000 500 800 1000 1.67 2.18 0.97 1.19 1.31 6.95 6.02 13.86 9.12 10.09 VCE = 2.5 V, IC = 1 mA VCE = 2.5 V, IC = 1 mA 1500 1.71 7.99 VCE = 2.5 V, IC = 3 mA 500 800 1000 1500 0.92 1.02 1.11 1.42 17.19 14.23 12.78 10.30 8.24 19.00 15.57 13.91 11.25 9.08 7.62 20.30 16.82 15.10 12.35 10.21 8.85 7.86 VCE = 2.5 V, IC = 3 mA 500 800 1000 1500 2000 2500 1.00 1.06 1.16 1.46 1.80 2.15 17.28 14.35 12.69 9.50 7.70 6.03 0.47 0.44 0.43 0.39 0.35 0.35 44 83 100 130 177 -177 0.25 0.21 0.17 0.12 0.11 0.09 2000 1.82 VCE = 3 V, IC = 5 mA 500 800 1000 1500 2000 2500 500 800 1000 1500 2000 2500 3000 1.00 1.10 1.19 1.40 1.70 2.05 1.10 1.20 1.30 1.50 1.77 2.10 2.40 VCE = 8 V, IC = 7mA 500 1000 2000 3000 4000 1.30 1.40 1.80 2.50 3.60 20.34 13.96 8.56 5.64 4.50 0.29 0.25 0.25 0.48 0.67 50 84 155 -167 -135 0.27 0.18 0.16 0.10 0.20 VCE = 8 V, IC = 7 mA NE68135 TYPICAL NOISE PARAMETERS (TA = 25°C) FREQ. (MHz) NFOPT (dB) GA (dB) 17.33 13.60 9.25 ΓOPT MAG 0.28 0.37 0.51 ANG 71 160 -139 Rn/50 0.22 0.15 0.27 VCE = 8 V, IC = 7 mA 1000 1.1 2000 4000 1.6 3.4 NE681 SERIES NE68133 TYPICAL NOISE PARAMETERS (TA = 25°C) FREQ. (MHz) NFOPT (dB) GA (dB) ΓOPT MAG 0.75 0.74 0.68 0.63 0.68 0.63 0.57 0.50 0.44 0.54 0.51 0.46 0.36 0.35 ANG 47 72 88 122 47 70 87 120 168 47 67 86 128 172 Rn/50 1.15 0.97 0.71 0.34 0.42 0.34 0.30 0.17 0.11 0.24 0.20 0.18 0.12 0.10 NE68139 TYPICAL NOISE PARAMETERS (TA = 25°C) FREQ. (MHz) 500 800 1000 500 800 1000 1500 NFOPT (dB) 1.20 1.45 1.67 0.90 1.10 1.26 1.70 GA (dB) 14.10 8.42 8.37 15.71 12.30 11.66 8.85 ΓOPT MAG 0.78 0.75 0.68 0.63 0.56 0.53 0.49 0.57 0.45 0.39 0.37 0.35 0.43 0.26 0.16 0.20 0.31 0.53 0.71 ANG 47 72 95 44 72 98 145 178 44 73 99 151 -177 42 133 176 -165 -123 -101 Rn/50 1.28 0.84 0.56 0.43 0.26 0.20 0.12 0.07 0.25 0.19 0.16 0.09 0.07 0.17 0.14 0.09 0.14 0.48 0.90 VCE = 2.5 V, IC = 0.3 mA 500 1.21 12.45 800 1000 1500 500 800 1000 1500 2000 500 800 1000 1500 2000 1.69 1.95 2.52 .92 1.20 1.35 1.71 2.00 0.86 1.00 1.08 1.25 1.40 7.72 5.96 3.12 14.52 10.57 9.29 6.53 5.53 16.37 12.41 11.07 8.61 6.99 VCE = 2.5 V, IC = 0.3 mA VCE = 2.5 V, IC = 1 mA VCE = 2.5 V, IC = 1.0 mA 2000 2.20 7.12 VCE = 2.5 V, IC = 3 mA 500 800 1000 1500 2000 500 1000 1500 2000 3000 4000 0.88 1.00 1.08 1.30 1.80 1.15 1.25 1.4 1.6 2.15 3.0 18.20 14.62 13.29 10.54 8.60 20.50 15.62 12.49 10.48 8.00 6.81 VCE = 2.5 V, IC = 3 mA VCE = 8 V, IC = 7 mA TYPICAL PERFORMANCE CURVES (TA = 25°C) FORWARD INSERTION GAIN AND MAXIMUM AVAILABLE GAIN vs. FREQUENCY 30 NE68100 & NE68135 INSERTION GAIN vs. COLLECTOR CURRENT 12 VCE = 8 V f = 2 GHz Insertion Gain, |S21E|2 (dB) Maximum Available Gain, MAG (dB) VCE = 8 V IC = 20 mA |S21E|2 NE68100 MAG NE68135 Insertion Gain, |S21E|2 (dB) 25 10 f = 3 GHz 20 8 f = 4 GHz 6 15 10 NE68133 5 |S21E| 2 MAG 4 2 0 0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10 0 1 2 3 5 7 10 20 30 50 Frequency, f (GHz) Collector Current, IC (mA) NE681 SERIES TYPICAL PERFORMANCE CURVES (TA = 25°C) DC POWER DERATING CURVES COLLECTOR TO BASE CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Collector to Base Capacitance, COB (pF) 400 5.0 Total Power Dissipation, PT (mW) 3.0 2.0 300 1.0 0.7 0.5 200 NE68133 100 NE68135 0.3 0.2 NE68133 NE68135 0.1 1 2 3 5 7 10 20 30 50 0 0 50 100 150 200 Ambient Temperature, TA (°C) Collector to Base Voltage, VCB (V) FORWARD CURRENT GAIN vs. COLLECTOR CURRENT 500 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 50 Gain Bandwidth Product, fT (GHz) VCE = 8 V DC Forward Current Gain, hFE 300 200 30 20 VCE = 8 V 100 70 50 30 20 10 7 5 3 2 10 1 2 3 5 7 10 20 30 50 1 1 2 3 5 7 10 20 30 50 Collector Current, IC (mA) NE68133 NOISE FIGURE vs. COLLECTOR CURRENT 3.0 VCE = 8 V f = 1 GHz 2.5 Collector Current, IC (mA) NE68100 & NE68135 NOISE FIGURE vs. COLLECTOR CURRENT 3.0 VCE = 8 V f = 2 GHz 2.5 Noise Figure, NF (dB) 2.0 Noise Figure, NF (dB) 1 2 3 5 7 10 20 30 50 2.0 1.5 1.5 1.0 1.0 0.5 0.5 0 1 2 3 5 7 10 20 30 50 0 Collector Current, IC (mA) Collector Current, IC (mA) NE681 SERIES TYPICAL COMMON EMITTER SCATTERING PARAMETERS j50 j25 S11 17 GHz j10 j100 90˚ 120˚ 60˚ 150˚ S12 17 GHz 30˚ 0 10 S22 17 GHz 25 50 100 S11 0.1 GHz 0 S22 0.1 GHz 180˚ S21 0.1 GHz S12 0.1 0.2 0.3 0.4 0.5 0˚ 0.1 GHz S21 17 GHz 10 15 20 -30˚ -j10 -150˚ -j25 -j100 -j50 NE68100 VCE = 8 V, IC = 7 mA FREQUENCY (MHz) 100 200 500 1000 1500 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 12000 MAG 0.827 0.809 0.742 0.701 0.689 0.686 0.687 0.693 0.699 0.708 0.717 0.721 0.725 0.726 0.724 0.722 S11 Coordinates in Ohms Frequency in GHz (VCE = 8 V, IC = 7 mA) S21 S12 ANG 163.9 151.0 123.0 101.5 90.4 82.0 69.7 59.1 49.8 41.1 31.7 23.3 14.2 5.9 -2.0 -9.7 MAG 0.012 0.022 0.038 0.047 0.049 0.053 0.061 0.071 0.081 0.096 0.116 0.125 0.146 0.169 0.179 0.192 ANG 88.3 65.5 42.2 36.7 33.0 35.0 45.9 48.7 53.2 57.0 56.6 56.9 55.9 54.9 51.9 49.0 -120˚ S21 25 -90˚ -60˚ S22 MAG ANG 0.964 -7.0 0.894 -16.8 0.691 -27.4 0.536 -29.0 0.483 -28.6 0.461 -29.2 0.447 -33.6 0.449 -40.6 0.454 -48.0 0.473 -57.1 0.490 -66.8 0.519 -76.0 0.549 -86.4 0.582 -96.0 0.621 -104.8 0.663 -114.1 K 0.03 0.13 0.28 0.47 0.71 0.88 1.11 1.21 1.27 1.15 0.99 0.97 0.83 0.74 0.71 0.69 MAG1 (dB) 32.1 29.1 25.2 22.0 20.2 18.7 14.4 11.8 10.0 9.4 10.3 9.5 8.3 7.1 6.4 5.4 ANG -20.8 -49.5 -101.1 -139.2 -156.6 -167.2 179.8 172.2 166.6 162.1 157.0 151.7 145.5 137.6 131.2 123.6 MAG 19.513 17.981 12.631 7.498 5.182 3.959 2.687 2.048 1.662 1.431 1.250 1.105 0.989 0.868 0.773 0.673 VCE = 8 V, IC = 20 mA 100 200 500 1000 1500 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 12000 0.665 0.664 0.663 0.663 0.667 0.669 0.676 0.686 0.693 0.705 0.719 0.727 0.726 0.733 0.732 0.728 -47.0 -85.3 -135.8 -161.1 -171.7 -178.4 172.7 167.3 162.6 159.0 154.5 149.4 143.5 135.9 129.4 122.1 38.130 31.089 16.975 9.066 6.113 4.627 3.112 2.361 1.913 1.643 1.433 1.266 1.134 1.001 0.897 0.787 154.1 135.9 108.9 93.2 84.9 78.3 67.9 58.6 50.1 42.2 33.3 25.4 16.7 8.4 0.5 -7.1 0.011 0.017 0.025 0.028 0.036 0.042 0.054 0.071 0.086 0.103 0.123 0.133 0.153 0.171 0.185 0.197 90.0 70.3 45.4 49.5 49.6 53.2 59.2 62.6 63.5 65.1 63.2 60.6 60.4 57.3 53.9 51.8 0.885 -15.0 0.753 -26.0 0.504 -30.8 0.404 -27.0 0.377 -26.3 0.369 -26.6 0.361 -31.6 0.362 -38.5 0.372 -45.8 0.386 -55.5 0.405 -65.0 0.433 -74.2 0.464 -84.5 0.500 -94.4 0.546 -103.2 0.587 -112.6 0.01 0.12 0.45 0.82 0.97 1.10 1.25 1.21 1.19 1.08 0.94 0.91 0.84 0.76 0.71 0.72 35.4 32.6 28.3 25.1 22.3 18.5 14.6 12.5 10.8 10.3 10.7 9.8 8.7 7.7 6.9 6.0 S-Parameters include bond wires. BASE: Total 1 wire (s), 1 per bond pad, 0.0122" (309 µm) long each wire. COLLECTOR: Total 1 wire (s), 1 per bond pad, 0.008" (203 µm) long each wire. EMITTER: Total 2 wire (s), 1 per side, 0.0194" (494 µm) long each wire. WIRE: 0.0007" (17.7 µm) dia., gold. Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE681 SERIES TYPICAL COMMON EMITTER SCATTERING PARAMETERS j50 j25 j100 90˚ 120˚ 60˚ j10 S11 5 GHz 150˚ S21 0.5 GHz 180˚ 30˚ 0 10 25 50 S22 5 GHz 100 S11 0.05 GHz 0 S22 0.05 GHz S12 0.5 GHz 4 0.2 0.3 S21 5 GHz 0.5 0˚ S12 5 GHz -30˚ -j10 -150˚ -j25 -j50 -j100 6 8 NE68119 VCE = 2.5 V, IC = 0.3 mA FREQUENCY (MHz) 50 100 200 300 400 500 600 700 800 900 1000 1500 2000 3000 50 100 200 300 400 500 600 700 800 900 1000 1500 2000 3000 MAG 0.995 0.992 0.981 0.967 0.950 0.929 0.915 0.892 0.874 0.853 0.838 0.770 0.723 0.693 0.979 0.965 0.944 0.915 0.877 0.836 0.802 0.770 0.741 0.714 0.694 0.616 0.572 0.555 S11 ANG -6.1 -11.9 -23.5 -35.3 -46.1 -57.0 -67.0 -77.0 -86.0 -94.5 -102.9 -139.2 -170.6 132.2 -8.4 -15.9 -30.0 -44.6 -57.8 -70.1 -81.8 -92.3 -102.0 -110.7 -118.7 -153.7 177.3 125.5 MAG 1.283 1.081 1.038 1.021 0.985 0.952 0.936 0.888 0.869 0.808 0.784 0.652 0.564 0.441 4.317 3.510 3.384 3.234 3.069 2.855 2.671 2.502 2.341 2.195 2.041 1.547 1.255 0.940 S21 Coordinates in Ohms Frequency in GHz (VCE = 2.5 V, IC = 3 mA) S12 ANG 174.1 170.4 158.4 149.2 139.2 130.0 121.0 112.7 105.0 97.2 90.6 61.2 39.0 9.0 172.8 166.3 155.6 145.3 134.8 125.6 116.9 109.0 102.0 95.1 89.4 63.8 43.4 10.4 MAG 0.017 0.027 0.052 0.078 0.096 0.114 0.130 0.144 0.153 0.160 0.165 0.169 0.146 0.085 0.016 0.026 0.049 0.069 0.090 0.104 0.115 0.122 0.127 0.133 0.135 0.132 0.124 0.132 ANG 88.1 80.9 74.0 65.0 58.4 52.4 44.5 38.5 32.7 27.3 21.8 1.6 -12.7 6.0 87.7 77.4 71.9 60.3 54.9 45.7 40.8 34.6 29.9 25.9 21.6 9.1 6.7 20.2 -120˚ S21 10 -90˚ -60˚ S22 MAG 0.997 0.995 0.991 0.989 0.979 0.962 0.948 0.937 0.928 0.916 0.908 0.869 0.842 0.803 0.990 0.986 0.971 0.949 0.918 0.883 0.850 0.822 0.798 0.778 0.762 0.706 0.672 0.627 ANG -1.1 -4.5 -9.3 -14.3 -18.2 -22.5 -26.4 -30.1 -33.9 -37.1 -40.5 -54.5 -66.5 -91.2 -1.3 -7.5 -13.0 -19.4 -24.6 -29.1 -33.4 -37.2 -40.6 -43.4 -46.4 -58.1 -68.2 -89.7 K MAG1 (dB) 0.02 0.06 0.11 0.15 0.20 0.23 0.30 0.33 0.36 0.42 0.45 0.66 0.95 1.98 0.04 0.10 0.09 0.15 0.17 0.25 0.28 0.33 0.38 0.43 0.48 0.75 1.07 1.41 18.8 16.0 13.0 11.2 10.1 9.2 8.6 7.9 7.5 7.0 6.8 5.9 5.9 1.5 24.3 21.3 18.4 16.7 15.3 14.4 13.7 13.1 12.7 12.2 11.8 10.7 8.4 4.7 VCE = 2.5 V, IC = 1.0 mA VCE = 2.5 V, IC = 3 mA 50 100 200 300 400 500 600 700 800 900 1000 1500 2000 3000 0.937 0.904 0.839 0.771 0.699 0.642 0.598 0.564 0.534 0.511 0.494 0.438 0.409 0.410 -13.0 -22.9 -44.6 -63.4 -79.9 -93.8 -106.0 -116.4 -125.9 -134.1 -141.6 -172.6 162.4 117.0 10.816 9.618 8.856 7.858 6.982 6.172 5.458 4.898 4.429 4.032 3.696 2.618 2.042 1.474 167.8 161.4 145.9 133.0 121.6 112.2 104.1 97.3 91.1 85.5 80.6 59.5 41.8 11.1 0.014 0.023 0.044 0.061 0.071 0.080 0.086 0.089 0.093 0.095 0.099 0.113 0.130 0.187 85.2 76.5 65.5 55.3 48.3 42.4 38.7 36.7 34.0 33.3 32.1 29.1 28.7 24.2 0.970 0.955 0.907 0.830 0.761 0.699 0.651 0.613 0.587 0.565 0.549 0.508 0.485 0.448 -5.3 -12.0 -21.5 -29.5 -35.9 -39.7 -43.3 -46.0 -48.2 -50.1 -52.3 -59.9 -67.6 -85.5 0.08 0.10 0.16 0.25 0.32 0.41 0.48 0.55 0.62 0.69 0.74 0.99 1.15 1.16 28.9 26.2 23.0 21.1 19.9 18.9 18.0 17.4 16.8 16.3 15.7 13.6 9.6 6.5 See note on next page. NE681 SERIES TYPICAL COMMON EMITTER SCATTERING PARAMETERS j50 j25 j100 j150 j10 j250 90˚ 120˚ 60˚ S12 2 GHz S21 2 GHz S12 .05 .10 .15 0.1 GHz 10 -150˚ 15 20 -30˚ 20 25 0˚ 150˚ S21 0.1 GHz 30˚ 0 10 25 S11 2 GHz 50 100 150 250 500 10 0 180˚ S22 0.1 GHz -j10 S22 2 GHz S11 0.1 GHz -j100 -j250 -j150 -j25 NE68133 VCE = 8 V, IC = 7 mA FREQUENCY (MHz) 100 200 500 1000 1500 2000 3000 MAG 0.802 0.639 0.344 0.170 0.115 0.098 0.137 S11 -j50 Coordinates in Ohms Frequency in GHz (VCE = 8 V, IC = 10 mA) S21 S12 ANG 153.8 134.2 105.5 86.7 75.3 66.2 53.2 MAG 0.023 0.039 0.065 0.109 0.160 0.212 0.313 ANG 68.7 69.8 67.8 73.5 74.8 74.7 73.2 -120˚ S21 25 -90˚ -60˚ S22 MAG 0.918 0.783 0.579 0.491 0.454 0.438 0.409 ANG -12.7 -19.9 -21.5 -17.7 -17.8 -16.9 -21.0 K 0.37 0.46 0.81 1.01 1.05 1.04 0.99 MAG1 (dB) 28.8 25.6 20.7 15.2 11.2 9.0 7.3 ANG -27.1 -49.2 -83.3 -113.4 -144.1 -176.3 137.6 MAG 17.578 14.213 7.671 4.126 2.870 2.254 1.669 VCE = 8 V, IC = 10 mA 100 200 500 1000 1500 2000 3000 0.744 0.553 0.277 0.134 0.092 0.079 0.122 -31.7 -54.5 -87.1 -115.8 -146.2 180.0 134.2 21.212 16.031 8.093 4.284 2.981 2.350 1.736 148.4 127.9 102.0 85.3 75.2 66.5 53.9 0.017 0.037 0.061 0.109 0.165 0.217 0.320 57.9 69.0 72.6 76.3 75.9 75.2 73.7 0.896 0.737 0.540 0.461 0.430 0.413 0.380 -14.6 -21.7 -20.9 -17.0 -16.5 -16.8 -21.3 0.50 0.54 0.88 1.04 1.04 1.03 0.99 31.0 26.4 21.2 14.7 11.3 9.3 7.3 VCE = 8 V, IC = 20 mA 100 200 500 1000 1500 2000 3000 0.594 0.389 0.175 0.089 0.064 0.070 0.120 -43.3 -66.3 -95.5 -127.5 -160.8 167.0 132.5 29.285 19.280 8.683 4.512 3.078 2.406 1.774 138.1 117.5 96.1 82.3 73.3 64.9 53.1 0.013 0.035 0.057 0.110 0.167 0.221 0.322 61.2 73.1 74.0 79.6 78.9 74.9 72.4 0.792 0.614 0.481 0.440 0.416 0.404 0.379 -19.4 -22.6 -16.5 -13.2 -13.9 -13.8 -19.4 0.57 0.69 0.98 1.03 1.04 1.02 0.98 33.5 27.4 21.8 15.1 11.4 9.5 7.4 VCE = 8 V, IC = 30 mA 100 200 500 1000 1500 2000 3000 Note: 1. Gain Calculations: MAG = |S21| |S12| 0.557 0.354 0.158 0.080 0.065 0.076 0.127 -46.9 -70.7 -100.5 -136.1 -175.0 156.0 128.4 30.197 19.196 8.499 4.363 3.009 2.348 1.742 135.2 115.1 94.8 81.7 72.7 65.0 53.0 0.017 0.029 0.059 0.111 0.167 0.219 0.325 65.9 73.4 77.7 80.7 80.1 77.1 74.2 0.836 0.664 0.503 0.455 0.428 0.415 0.387 -17.4 -22.2 -17.7 -14.3 -14.2 -14.2 -19.7 0.50 0.67 0.95 1.03 1.03 1.03 0.98 32.5 28.2 21.6 14.9 11.5 9.2 7.3 (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE681 SERIES TYPICAL COMMON EMITTER SCATTERING PARAMETERS 5 GHz 5 GHz S21 0.1 GHz S22 S11 0.1 GHz 0.1 GHz S12 0.1 GHz 5 GHz 5 GHz NE68135 VCE = 8 V, IC = 7 mA FREQUENCY (MHz) 100 5 00 1000 1500 2000 3000 4000 5000 S11 MAG .836 .659 .585 .557 .562 .561 .562 .563 ANG -26.1 -105.0 -146.1 -167.0 -180.0 159.6 142.8 127.0 MAG 18.427 11.481 6.625 4.555 3.507 2.413 1.854 1.516 S21 ANG 160.4 114.7 90.3 75.5 63.9 43.4 25.1 8.0 Coordinates in Ohms Frequency in GHz (VCE = 8 V, IC = 10 mA) S12 MAG .014 .041 .051 .058 .068 .088 .113 .142 ANG 73.6 44.3 38.3 39.3 41.3 43.1 41.9 38.7 MAG .959 .654 .512 .472 .462 .468 .490 .522 S22 ANG -11.3 -33.2 -38.5 -43.1 -49.4 -64.3 -80.4 -96.0 K 0.16 0.38 0.68 0.93 1.02 1.11 1.07 0.98 MAG1 (dB) 31.1 24.4 21.1 18.9 16.4 12.4 10.6 10.3 VCE = 8 V, IC = 10 mA 100 500 1000 1500 2000 3000 4000 5000 .781 .609 .558 .540 .547 .549 .551 .551 -32.1 -117.6 -154.7 -173.1 175.3 156.5 140.6 125.2 24.097 13.015 7.233 4.925 3.778 2.590 1.990 1.629 157.2 109.6 87.5 73.9 62.9 43.3 25.5 8.7 .013 .036 .045 .055 .067 .091 .119 .149 73.4 44.6 43.2 45.8 47.6 47.4 44.2 39.4 .937 .582 .457 .425 .420 .428 .452 .486 -13.9 -35.2 -38.5 -42.6 -48.8 -63.7 -79.7 -95.2 0.15 0.47 0.79 1.00 1.05 1.09 1.05 0.96 32.6 25.6 22.0 19.4 16.1 12.7 10.9 10.4 VCE = 8 V, IC = 20 mA 100 500 1000 1500 2000 3000 4000 5000 .654 .547 .535 .527 .534 .541 .544 .544 -49.9 -139.7 -168.1 -177.7 168.5 151.9 137.2 122.7 36.807 14.980 7.916 5.328 4.072 2.780 2.131 1.745 149.3 101.5 83.2 71.3 61.1 42.7 25.5 9.0 .012 .027 .038 .051 .065 .094 .124 .156 67.4 49.0 53.7 56.2 56.6 53.4 47.8 41.3 .877 .475 .392 .375 .376 .389 .415 .451 -19.2 -34.9 -35.7 -39.9 -46.5 -61.9 -78.1 -93.7 0.21 0.66 0.95 1.08 1.09 1.07 1.01 0.94 35.0 27.5 23.2 18.4 16.2 13.1 11.6 10.5 VCE = 8 V, IC = 30 mA 100 500 1000 1500 2000 3000 4000 5000 .575 .539 .537 .532 .541 .549 .552 .553 -64.1 -150.2 -173.7 173.7 165.5 149.8 135.7 121.2 43.452 15.238 7.926 5.318 4.058 2.767 2.118 1.731 144.0 97.9 81.2 69.9 60.1 41.9 24.9 8.5 .010 .023 .036 .049 .064 .094 .125 .157 64.1 52.7 58.9 60.7 60.2 55.9 49.8 42.9 .831 .441 .381 .370 .374 .390 .416 .453 -21.9 -32.3 -32.9 -37.8 -44.9 -60.9 -77.4 -93.3 0.26 0.77 1.01 1.11 1.09 1.06 1.00 0.92 36.3 28.2 22.7 18.3 16.1 13.2 12.1 10.4 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE681 SERIES TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = 25°C) 1 .6 2 90˚ 135˚ S12 3 GHz 45˚ S22 3 GHz .2 4 10 0 .2 .6 1 2 4 10 S11 0.5 GHz S11 3 GHz -.2 -4 S22 0.5 GHz -10 S21 180˚ 0.5 GHz S12 0.5 GHz S21 3 GHz 0.05 0.10 0.15 0˚ 2.5 5 -2 -.6 NE68139 VCE = 2.5 V, IC = 0.3 mA FREQUENCY (MHz) 50 100 200 300 400 500 600 800 1000 1500 2000 3000 S11 MAG 0.996 0.995 0.990 0.973 0.953 0.931 0.909 0.862 0.819 0.744 0.732 0.762 -1 Coordinates in Ohms Frequency in GHz (VCE = 2.5 V, IC = 3 mA) 7.5 225˚ 10 270˚ 315˚ S21 ANG MAG 1.089 1.079 1.071 1.032 0.993 0.991 1.008 0.908 0.871 0.729 0.632 0.438 ANG 175.2 173.1 161.9 153.6 145.9 137.2 129.9 114.3 101.2 72.2 51.7 28.5 MAG 0.014 0.027 0.050 0.075 0.098 0.122 0.138 0.167 0.184 0.192 0.155 0.089 S12 ANG 83.2 80.3 74.5 68.7 64.3 59.3 53.5 42.7 33.4 14.1 3.4 8.4 MAG S22 ANG -1.1 -2.7 -5.7 -8.7 -11.4 -13.8 -16.4 -21.0 -25.0 -35.2 -46.3 -76.7 0.995 0.993 0.989 0.985 0.976 0.965 0.949 0.918 0.888 0.828 0.802 0.770 K 0.13 0.06 0.16 0.19 0.19 0.25 0.28 0.37 0.45 0.66 0.85 1.62 MAG1 (dB) 18.9 16.0 13.3 11.4 10.1 9.1 8.6 7.4 6.8 5.8 5.0 2.3 -3.4 -11.4 -20.3 -30.7 -41.2 -50.3 -60.5 -79.9 -98.5 -140.0 -173.0 142.1 VCE = 2.5 V, IC = 1.0 mA 50 100 200 300 400 500 600 800 1000 1500 2000 3000 0.985 0.971 0.942 0.914 0.876 0.828 0.790 0.715 0.663 0.596 0.600 0.660 -6.8 -14.8 -27.5 -40.4 -53.8 -65.2 -76.9 -98.4 -117.6 -157.8 173.8 136.9 3.763 3.648 3.497 3.346 3.184 3.043 2.880 2.516 2.237 1.686 1.346 0.941 175.3 171.0 159.1 149.4 140.6 131.8 124.1 109.8 98.4 74.8 56.9 30.9 0.016 0.029 0.050 0.070 0.092 0.106 0.119 0.137 0.145 0.145 0.130 0.144 86.4 82.4 74.3 65.4 58.7 53.8 47.7 38.9 32.3 23.5 24.6 47.4 0.989 0.980 0.963 0.946 0.916 0.884 0.845 0.778 0.726 0.631 0.583 0.538 -2.8 -4.8 -9.5 -13.9 -17.8 -20.9 -24.1 -28.6 -31.9 -39.8 -48.9 -75.9 0.01 0.01 0.10 0.17 0.20 0.25 0.30 0.40 0.49 0.75 1.04 1.21 23.7 21.0 18.4 16.8 15.4 14.6 13.8 12.6 11.9 10.7 8.9 5.4 VCE = 2.5 V, IC = 3 mA 50 100 200 300 400 500 600 800 1000 1500 2000 3000 Note: 1. Gain Calculations: MAG = |S21| |S12| 0.916 0.895 0.829 0.755 0.694 0.619 0.574 0.500 0.470 0.453 0.481 0.567 -10.7 -23.5 -42.0 -60.3 -76.4 -90.0 -103.0 -125.0 -143.4 -178.4 159.4 130.6 10.426 9.954 9.011 8.067 7.165 6.329 5.660 4.558 3.815 2.684 2.078 1.442 172.1 164.8 148.6 136.2 125.8 117.1 109.8 97.8 88.7 70.7 56.4 34.1 0.015 0.027 0.046 0.061 0.074 0.083 0.089 0.099 0.106 0.123 0.141 0.197 84.7 79.0 67.6 57.7 52.4 49.8 46.7 43.3 42.0 43.6 47.3 49.7 0.975 0.972 0.910 0.826 0.754 0.690 0.634 0.552 0.496 0.412 0.362 0.302 -4.6 -9.6 -18.1 -24.5 -29.3 -32.3 -34.4 -37.1 -38.6 -43.3 -51.3 -78.6 0.07 0.05 0.19 0.29 0.35 0.43 0.50 0.65 0.77 0.99 1.11 1.08 28.4 25.7 22.9 21.2 19.9 18.8 18.0 16.6 15.6 13.4 9.7 6.9 (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE681 SERIES TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = 25°C) NE68139 VCE = 8 V, IC = 7 mA FREQUENCY (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 2000 3000 4000 5000 Note: 1. Gain Calculations: MAG = |S21| |S12| S11 MAG 0.764 0.675 0.569 0.481 0.432 0.398 0.374 0.354 0.339 0.332 0.333 0.343 0.332 0.343 0.348 0.414 0.502 0.595 0.650 ANG -28 -55 -76 -94 -110 -120 -133 -141 -152 -159 -166 -174 180 173 171 150 126 110 97 MAG 17.806 15.233 12.659 10.620 8.886 7.696 6.888 6.073 5.422 4.963 4.576 4.264 3.912 3.656 3.433 2.656 1.829 1.426 1.119 S21 ANG 156 138 126 116 107 102 97 93 88 85 81 78 76 73 71 56 38 17 1 MAG 0.002 0.008 0.018 0.025 0.035 0.043 0.046 0.056 0.055 0.066 0.069 0.076 0.080 0.089 0.098 0.129 0.192 0.256 0.317 S12 ANG 53 70 61 59 59 58 59 59 60 61 62 62 63 63 66 60 60 50 44 S22 MAG ANG 0.944 -12 0.855 -19 0.734 -22 0.698 -25 0.602 -24 0.589 -24 0.530 -26 0.522 -25 0.493 -28 0.493 -25 0.488 -28 0.457 -27 0.467 -29 0.449 -29 0.447 -29 0.388 -40 0.323 -63 0.302 -95 0.343 -126 K 0.91 0.54 0.69 0.74 0.86 0.86 0.99 0.97 1.13 1.05 1.08 1.09 1.12 1.09 1.06 1.04 1.00 0.88 0.83 MAG1 (dB) 39.5 32.8 28.5 26.3 24.0 22.5 21.8 20.4 17.7 17.4 16.5 15.7 14.8 14.3 13.9 11.9 9.8 7.5 5.5 (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE681 SERIES NE68118 NONLINEAR MODEL SCHEMATIC CCBPKG CCB LC LBX Base LB CCE LCX Collector Q1 CBEPKG LE LC CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS(1) Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 2.7e-16 185 1.02 15 0.055 1.77e-11 2.1 1 1 Infinity Infinity 0 2 0.6 12 3.7 1.2e-5 8 1.2e-12 0.77 0.5 0.8e-12 0.27 Parameters MJC XCJC CJS VJS MJS FC TF XTF VTF ITF PTF TR EG XTB XTI KF AF Q1 0.56 0 0 0.75 0 0.5 14e-12 3 25 0.1 0 0.3e-9 1.11 0 3 0 1 UNITS Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps ADDITIONAL PARAMETERS Parameters CCB CCE LB LC LE CCBPKG CCEPKG CBEPKG LBX LCX LEX 68118 0.07e-12 0.01e-12 1.16e-9 1.54e-9 0.83e-9 0.09e-12 0.51e-12 0.25e-12 0.18e-9 0.8e-9 0.09e-9 (1) Gummel-Poon Model MODEL RANGE Frequency: 0.05 to 5.0 GHz Bias: VCE = 2.5 V to 8.0 V, IC = 3 mA to 10 mA Date: 5/29/96 Note: 1. This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data. NE681 SERIES NE68119 NONLINEAR MODEL SCHEMATIC CCBPKG CCB LCX LBX Base LB CCE Collector Q1 LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS(1) Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 2.7e-16 185.0 1.02 15.0 0.055 1.77e-11 2.1 1 1 Infinity Infinity 0 2 0.6 12 3.7 1.2e-5 8 1.2e-12 0.77 0.5 0.8e-12 0.27 Parameters MJC XCJC CJS VJS MJS FC TF XTF VTF ITF PTF TR EG XTB XTI KF AF Q1 0.56 0 0 0.75 0 0.5 14.0e-12 3 25 0.1 0 0.3e-9 1.11 0 3 0 1 UNITS Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps ADDITIONAL PARAMETERS Parameters CCB CCE LB LE CCBPKG CCEPKG LBX LCX LEX 68119 0.07e-12 0.01e-12 1.13e-9 0.85e-9 0.18e-12 0.21e-12 0.19e-9 0.19e-9 0.19e-9 MODEL RANGE Frequency: 0.05 to 3.0 GHz Bias: VCE = 2.5 V to 8.0 V, IC = 0.3 mA to 10 mA (1) Gummel-Poon Model NE681 SERIES NE68130 NONLINEAR MODEL SCHEMATIC CCBPKG CCB Q1 LCX LBX Base LB CCE Collector CBEPKG LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1) Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 2.7e-16 185 1.02 15 0.055 1.77e-11 2.1 1 1 Infinity Infinity 0 2 0.6 12 3.7 1.2e-5 8 1.2e-12 0.77 0.5 0.8e-12 0.27 Parameters MJC XCJC CJS VJS MJS FC TF XTF VTF ITF PTF TR EG XTB XTI KF AF Q1 0.56 0 0 0.75 0 0.5 14e-12 3 25 0.1 0 0.3e-9 1.11 0 3 0 1 UNITS Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps ADDITIONAL PARAMETERS Parameters CCB CCE LB LE CCBPKG CCEPKG CBEPKG LBX LCX LEX 68130 0.07e-12 0.01e-12 0.52e-9 1.18e-9 0.12e-12 0.16e-12 0.04e-12 0.2e-9 0.8e-9 0.2e-9 MODEL RANGE Frequency: 0.05 to 3.0 GHz Bias: VCE = 2.5 V to 8 V, IC = 0.3 mA to 10 mA Date: 10/11/96 (1) Gummel-Poon Model Note: This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data. NE681 SERIES NE68133 NONLINEAR MODEL SCHEMATIC CCBPKG CCB Q1 LCX LBX Base LB CCE Collector CBEPKG LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 2.7e-16 185 1.02 15 0.055 1.77e-11 2.1 1 1 Infinity Infinity 0 2 0.6 12 3.7 1.2e-5 8 1.2e-12 0.77 0.5 0.8e-12 0.27 Parameters MJC XCJC CJS VJS MJS FC TF XTF VTF ITF PTF TR EG XTB XTI KF AF (1) UNITS Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps Q1 0.56 0 0 0.75 0 0.5 14e-12 3 25 0.1 0 0.3e-9 1.11 0 3 0 1 ADDITIONAL PARAMETERS Parameters CCB CCE LB LE CCBPKG CCEPKG CBEPKG LBX LCX LEX 68133 0.07e-12 0.01e-12 0.9e-9 1.2e-9 0.2e-12 0.2e-12 0.01e-12 0.3e-9 0.6e-9 0.3e-9 MODEL RANGE Frequency: 0.1 to 8.0 GHz Bias: VCE = 1 V to 8 V, IC = 1 mA to 30 mA Date: 7/97 (1) Gummel-Poon Model Note: This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data. NE681 SERIES NE68135 NONLINEAR MODEL SCHEMATIC Q1 CCB_PKG 0.11pF 0.07pF CCB RB_PKG BASE 0.1 ohms 0.15nH 0.45nH LB_PKG LB LC 0.96 nH CCE 0.01pF LC_PKG 0.15nH RC_PKG COLLECTOR 0.1 ohms CCE_PKG 0.2pF CBE_PKG 0.05pF LE_PKG 0.38nH CBEX_PKG RE_PKG 0.1 ohms CCEX_PKG 0.1pF EMITTER 0.2pF BJT NONLINEAR MODEL PARAMETERS Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 2.7e-16 185.0 1.02 15.0 0.055 1.77e-11 2.1 1 1 Infinity Infinity 0 2 0.6 12 3.7 1.2e-5 8 1.2e-12 0.77 0.5 0.8e-12 0.27 Parameters MJC XCJC CJS VJS MJS FC TF XTF VTF ITF PTF TR EG XTB XTI KF AF Q1 (1) UNITS Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps 0.56 0 0 0.75 0 0.5 14e-12 3 25 0.1 0 0.3e-9 1.11 0 3 0 1 MODEL RANGE Frequency: 0.05 to 5.0 GHz Bias: VCE = 8.0 V, IC = 7 mA to 30 mA Date: 11/1/96 (1) Gummel-Poon Model NE681 SERIES NE68139 NONLINEAR MODEL SCHEMATIC CCBPKG CCB LCX LBX Base LB LC CCE Collector Q1 CBEPKG LE CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS(1) Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 2.7e-16 185.0 1.02 15.0 0.055 1.77e-11 2.1 1.0 1.0 Infinity Infinity 0 2.0 0.6 12.0 3.7 1.2e-5 8.0 1.2e-12 0.77 0.50 0.8e-12 0.27 Parameters MJC XCJC CJS VJS MJS FC TF XTF VTF ITF PTF TR EG XTB XTI KF AF Q1 0.56 0 0 0.750 0 0.50 14.0e-12 3.0 25.0 0.1 0 0.3e-9 1.11 0 3.0 0 1.0 UNITS Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps ADDITIONAL PARAMETERS Parameters CCB CCE LB LC LE CCBPKG CCEPKG CBEPKG LBX LCX LEX 68139 0.07e-12 0.01e-12 0.88e-9 0.79e-9 0.7e-9 0.165e-12 0.165e-12 0.01e-12 0.39e-9 0.39e-9 0.2e-9 (1) Gummel-Poon Model MODEL RANGE Frequency: 0.1 to 3.0 GHz Bias: VCE = 2.5 V to 8.0 V, IC = 0.3 mA to 7 mA Date: 6/17/96 NE681 SERIES OUTLINE DIMENSIONS (Units in mm) NE68100 (CHIP) (Chip Thickness: 160 mm) 0.35±0.01 0.13 BASE EMITTER 0.03φ 0.02 0.35±0.01 PACKAGE OUTLINE 18 2.1 ± 0.2 1.25 ± 0.1 +0.10 0.3 -0.05 (LEADS 2, 3, 4) PACKAGE OUTLINE 18 RECOMMENDED P.C.B. LAYOUT 0.8 2 3 0.6 2.0 ± 0.2 0.65 2 3 0.65 1.3 0.60 0.65 1 +0.10 0.4 -0.05 0.3 4 0.9 ± 0.1 PIN CONNECTIONS 1. Collector 2. Emitter 3. Base 4. Emitter +0.10 0.15 -0.05 1.25 1 1.7 0 to 0.1 4 1 PACKAGE OUTLINE 19 1.6 ± 0.1 0.8 ± 0.1 2 PACKAGE OUTLINE 19 RECOMMENDED P.C.B. LAYOUT 1.3 1.6 ± 0.1 1.0 0.5 +0.1 0.2 - 0 1 3 +0.10 0.3 -0.05 LEAD 3 ONLY 2 3 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector 0.75 ± 0.05 0.6 +0.1 0.15 -0.05 1.0 0.5 0.6 1 0.6 0 to 0.1 PACKAGE OUTLINE 30 2.1 ± 0.2 1.25 ± 0.1 PACKAGE OUTLINE 30 RECOMMENDED P.C.B. LAYOUT 1.7 2.0 ± 0.2 1.3 3 0.65 2 +0.1 0.3 -0.05 (ALL LEADS) 2 3 1 MARKING 0.15 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector 1.3 0.65 0.6 1 0.8 0.9 ± 0.1 0 to 0.1 +0.10 0.15 -0.05 NE681 SERIES OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 33 RECOMMENDED P.C.B. LAYOUT PACKAGE OUTLINE 33 (SOT-23) +0.2 2.8 -0.3 2.4 2 2.9 ± 0.2 0.95 1.9 2 +0.10 0.4 -0.05 (ALL LEADS) 3 3 1.9 1 +0.2 1.5 -0.1 +0.10 0.65 -0.15 0.95 1.1 to 1.4 0.8 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector 0.8 1 1.0 0 to 0.1 +0.10 0.16 -0.06 PACKAGE OUTLINE 35 (MICRO-X) E 3.8 MIN ALL LEADS 0.5±0.06 C B 45˚ E 2.55±0.2 +0.06 0.1 -0.04 φ2.1 1.8 MAX 0.55 PIN CONNECTIONS 1.Collector 2. Emitter 3. Base 4. Emitter PACKAGE OUTLINE 39 +0.2 2.8 -0.3 +0.2 1.5 -0.1 +0.10 0.4 -0.05 (LEADS 2, 3, 4) PACKAGE OUTLINE 39 RECOMMENDED P.C.B. LAYOUT 2.4 2.9 ± 0.2 0.95 0.85 2 3 1.9 2 3 1 +0.10 0.6 -0.05 4 PIN CONNECTIONS 1.Collector 2. Emitter 3. Base 4. Emitter 0.16 +0.10 -0.06 1.9 +0.2 1.1 -0.1 0.8 1.0 1 5˚ 0 to 0.1 5˚ 4 1.0 NE681 SERIES OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 39R RECOMMENDED P.C.B. LAYOUT PACKAGE OUTLINE 39R +0.2 2.8 -0.3 +0.10 0.6 -0.05 +0.2 1.5 -0.1 2.4 0.85 2.9 ± 0.2 2 3 1.8 2 3 0.95 1 4 +0.10 0.4 -0.05 (LEADS 1, 3, 4) 1.9 1.1+0.2 -0.1 0.8 0.16 +0.10 -0.06 PIN CONNECTIONS 1. Emitter 2. Collector 3. Emitter 4. Base 1.0 1 1.0 4 5˚ 5˚ 0 to 0.1 ORDERING INFORMATION (Solder Contains Lead) PART NUMBER NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 NE68139-T1 NE68139R-T1 QUANTITY 100 3000 3000 3000 3000 1 3000 3000 PACKAGING Waffle Pack Tape & Reel Tape & Reel Tape & Reel Tape & Reel ESD Bag Tape & Reel Tape & Reel ORDERING INFORMATION (Pb-Free) PART NUMBER NE68100 NE68118-T1-A NE68119-T1-A NE68130-T1-A NE68133-T1B-A NE68135 NE68139-T1-A NE68139R-T1 QUANTITY 100 3000 3000 3000 3000 1 3000 3000 PACKAGING Waffle Pack Tape & Reel Tape & Reel Tape & Reel Tape & Reel ESD Bag Tape & Reel Tape & Reel Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. A Business Partner of NEC Compound Semiconductor Devices, Ltd. 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Lead (Pb) Mercury Cadmium Hexavalent Chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 100 PPM < 1000 PPM < 1000 PPM < 1000 PPM Concentration contained in CEL devices -A Not Detected Not Detected Not Detected Not Detected Not Detected Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. 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