NESG3031M14-A

DATASHEET NEC's NPN SiGe NESG3031M14 HIGH FREQUENCY TRANSISTOR FEATURES • THE DEVICE IS AN IDEAL CHOICE FOR LOW NOISE, HIGH-GAIN AMPLIFICATION: NF = 0.95 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz NF = 1.1 dB TYP., Ga = 9.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz • MAXIMUM STABLE POWER GAIN: MSG = 15.0 dB TYP. @ VCE = 3 V, IC = 20 mA, f = 5.8 GHz • SiGe HBT TECHNOLOGY (UHS3) ADOPTED: fmax = 110 GHz • M14 PACKAGE: 4-pin lead-less minimold package M14 Package ORDERING INFORMATION PART NUMBER NESG3031M14-A NESG3031M14-T3-A QUANTITY 50 pcs (Non reel) 10 kpcs/reel SUPPLYING FORM • 8 mm wide embossed taping • Pin 1 (Collector), Pin 4 (Emitter) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25ºC) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC Ptot Note Tj Tstg RATINGS 12.0 4.3 1.5 35 150 150 −65 to +150 UNIT V V V mA mW °C °C Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PWB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. California Eastern Laboratories 1 NESG3031M14 ELECTRICAL CHARACTERISTICS (TA = +25ºC) PARAMETER DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Insertion Power Gain Noise Figure (1) Noise Figure (2) Associated Gain (1) Associated Gain (2) Reverse Transfer Capacitance Maximum Stable Power Gain Gain 1 dB Compression Output Power 3rd Order Intermodulation Distortion Output Intercept Point | S21e |2 NF NF Ga Ga Cre Note 2 MSGNote 3 PO (1 dB) OIP3 VCE = 3 V, IC = 20 mA, f = 5.8 GHz VCE = 2 V, IC = 6 mA, f = 5.2 GHz, ZS = ZSopt, ZL = ZLopt VCE = 2 V, IC = 6 mA, f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt VCE = 2 V, IC = 6 mA, f = 5.2 GHz, ZS = ZSopt, ZL = ZLopt VCE = 2 V, IC = 6 mA, f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt VCB = 2 V, IE = 0 mA, f = 1 MHz VCE = 3 V, IC = 20 mA, f = 5.8 GHz VCE = 3 V, IC (set) = 20 mA, f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt VCE = 3 V, IC (set) = 20 mA, f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt 6.5 − − − 7.5 − 12.0 − − 9.0 0.95 1.1 10.0 9.5 0.15 15.0 13.0 18.0 − − 1.5 − − 0.25 − − − dB dB dB dB dB pF dB dBm dBm ICBO IEBO hFE Note 1 VCB = 5 V, IE = 0 mA VEB = 1 V, IC = 0 mA VCE = 2 V, IC = 6 mA − − 220 − − 300 100 100 380 nA nA − SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded 3. MSG = S21 S12 hFE CLASSIFICATION RANK Marking hFE Value FB zJ 220 to 380 2 NESG3031M14 TYPICAL CHARACTERISTICS (TA = 25ºC, unless otherwise specified) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Total Power Dissipation Ptot (mW) Mounted on glass epoxy PWB (1.08 cm2 × 1.0 mm (t)) Reverse Transfer Capacitance Cre (pF) 250 200 150 100 50 REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 0.3 f = 1 MHz 0.2 0.1 0 25 50 75 100 125 150 0 2 4 6 8 10 Ambient Temperature TA (ºC) Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 Collector Current IC (mA) 10 1 0.1 0.01 0.001 VCE = 1 V Collector Current IC (mA) 100 10 1 0.1 0.01 0.001 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VCE = 2 V 0.0001 0.5 0.6 0.7 0.8 0.9 1.0 0.0001 0.5 0.6 0.7 0.8 0.9 1.0 0.00001 0.4 0.00001 0.4 Base to Emitter Voltage VBE (V) Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 Collector Current IC (mA) 10 1 0.1 0.01 0.001 VCE = 3 V Collector Current IC (mA) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 40 200 µ A 180 µ A 160 µ A 140 µ A 120 µ A 100 µ A 80 µ A 60 µ A 40 µ A IB = 20 µ A 30 20 10 0.0001 0.5 0.6 0.7 0.8 0.9 1.0 0.00001 0.4 0 1 2 3 4 5 Base to Emitter Voltage VBE (V) Collector to Emitter Voltage VCE (V) Remark The graphs indicate nominal characteristics. 3 NESG3031M14 DC CURRENT GAIN vs. COLLECTOR CURRENT 1,000 VCE = 1 V 1,000 DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = 2 V DC Current Gain hFE DC Current Gain hFE 100 100 10 0.1 1 10 100 10 0.1 1 10 100 Collector Current IC (mA) Collector Current IC (mA) DC CURRENT GAIN vs. COLLECTOR CURRENT 1,000 Gain Bandwidth Product fT (GHz) VCE = 3 V 30 25 20 15 10 5 0 1 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT VCE = 1 V f = 2 GHz DC Current Gain hFE 100 10 0.1 1 10 100 10 Collector Current IC (mA) 100 Collector Current IC (mA) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 30 Gain Bandwidth Product fT (GHz) 25 20 15 10 5 0 1 10 Collector Current IC (mA) 100 Gain Bandwidth Product fT (GHz) VCE = 2 V f = 2 GHz 30 25 20 15 10 5 0 1 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT VCE = 3 V f = 2 GHz 10 Collector Current IC (mA) 100 Remark The graphs indicate nominal characteristics. 4 NESG3031M14 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 30 25 20 15 10 5 0 1 10 Frequency f (GHz) 100 MSG MAG VCE = 1 V IC = 20 mA 30 25 20 15 10 5 0 1 10 Frequency f (GHz) 100 MSG MAG MAG MSG |S21e|2 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY VCE = 2 V IC = 20 mA |S21e|2 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 30 25 20 15 10 5 0 1 10 Frequency f (GHz) 100 MAG MSG |S21e|2 MSG MAG Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) VCE = 3 V IC = 20 mA INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 30 25 20 15 10 5 0 1 10 Collector Current IC (mA) 100 MSG MAG VCE = 1 V f = 2.4 GHz |S21e|2 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 30 25 20 15 10 5 0 1 10 Collector Current IC (mA) 100 |S21e|2 Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) VCE = 2 V f = 2.4 GHz MSG MAG INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 30 25 20 15 10 5 0 1 10 Collector Current IC (mA) 100 |S21e|2 VCE = 3 V f = 2.4 GHz MSG MAG Remark The graphs indicate nominal characteristics. 5 NESG3031M14 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 25 20 15 10 5 0 -5 1 10 Collector Current IC (mA) 100 |S21e| 2 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 25 20 15 10 5 0 -5 1 10 Collector Current IC (mA) 100 |S21e|2 VCE = 2 V f = 5.2 GHz MSG MAG VCE = 1 V f = 5.2 GHz MSG MAG INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 25 20 15 10 5 0 -5 1 10 Collector Current IC (mA) 100 |S21e|2 VCE = 3 V f = 5.2 GHz MSG MAG INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 25 20 15 10 5 0 -5 1 10 Collector Current IC (mA) 100 |S21e|2 MSG MAG VCE = 1 V f = 5.8 GHz INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 25 20 15 10 5 0 -5 1 10 Collector Current IC (mA) 100 MSG MAG VCE = 2 V f = 5.8 GHz INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 25 20 15 10 5 0 -5 1 10 Collector Current IC (mA) 100 |S21e|2 VCE = 3 V f = 5.8 GHz MSG MAG |S21e|2 Remark The graphs indicate nominal characteristics. 6 NESG3031M14 OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER 20 Output Power Pout (dBm) 15 10 5 0 -5 -20 IC VCE = 3 V, f = 2.4 GHz IC (set) = 20 mA Pout 30 20 10 0 50 Collector Current IC (mA) Output Power Pout (dBm) 40 20 15 10 5 0 -5 -15 OUTPUT POWER, COLLECTOR CURRENT vs. INPUT POWER VCE = 3 V, f = 5.8 GHz IC (set) = 20 mA Pout IC 50 Collector Current IC (mA) Associated Gain Ga (dB) 40 30 20 10 0 10 -15 -10 -5 0 5 -10 -5 0 5 Input Power Pin (dBm) Input Power Pin (dBm) NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 5 Ga Associated Gain Ga (dB) Noise Figure NF (dB) Noise Figure NF (dB) 4 3 2 1 0 NF 1 10 Collector Current IC (mA) 16 12 8 4 0 100 4 3 2 1 0 20 5 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 15 Ga 12 9 6 NF 3 0 100 VCE = 2 V f = 2.4 GHz VCE = 2 V f = 5.8 GHz 1 10 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. 7 NESG3031M14 PACKAGE DIMENSIONS (UNIT : mm) 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PACKAGE) 1.0±0.05 0.8+0.07 -0.05 3 2 4 1 zJ PIN CONNECTIONS 1. 2. 3. 4. Collector Emitter Base Emitter Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 0.5±0.05 0.11+0.15 -0.0 0.15±0.05 1.2+0.07 -0.05 0.8 01/31/2005 A Business Partner of NEC Compound Semiconductor Devices, Ltd. 8 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Lead (Pb) Mercury Cadmium Hexavalent Chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 100 PPM < 1000 PPM < 1000 PPM < 1000 PPM Concentration contained in CEL devices -A Not Detected Not Detected Not Detected Not Detected Not Detected Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. 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