PS2562L-1-A

DATA SHEET PHOTOCOUPLER PS2562-1,PS2562L-1,PS2562L1-1,PS2562L2-1 HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES −NEPOC Series− DESCRIPTION The PS2562-1 is optically coupled isolators containing a GaAs light emitting diode and an NPN silicon darlington connected phototransistor. The PS2562-1 is in a plastic DIP (Dual In-line Package) and the PS2562L-1 is lead bending type (Gull-wing) for surface mount. The PS2562L1-1 is lead bending type for long creepage distance. The PS2562L2-1 is lead bending type for long creepage distance (Gull-wing) for surface mount. FEATURES • High isolation voltage (BV = 5 000 Vr.m.s.) PIN CONNECTION (Top View) • High current transfer ratio (CTR = 2 000% TYP.) • High-speed switching (tr, tf = 100 μs TYP.) • Ordering number of tape product: PS2562L-1-F3 : 2 000 pcs/reel • Safety standards 4 3 1. Anode 2. Cathode 3. Emitter 4. Collector : PS2562L2-1-E3: 1 000 pcs/reel 1 • UL approved: No. E72422 2 • CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065, 60950) • BSI approved: No. 7112/7420 • SEMKO approved: No. 903238 • NEMKO approved: No. P09210868 • DEMKO approved: No. 314999 • FIMKO approved: No. FI 25119 • DIN EN60747-5-2 (VDE0884 Part2) approved: No. 40008862 (option) APPLICATIONS • Power supply • Telephone/FAX. • FA/OA equipment • Programmable logic controller The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Document No. PN10235EJ04V0DS (4th edition) Date Published November 2009 NS Printed in Japan The mark shows major revised points. The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field. PS2562-1,PS2562L-1,PS2562L1-1,PS2562L2-1 PACKAGE DIMENSIONS (UNIT : mm) DIP Type Long Creepage Distance PS2562L1-1 PS2562-1 4.6±0.35 4.6±0.35 4 3 1 2 6.5±0.5 6.5±0.5 4 3 1 2 0 to 15° +0.1 0.25 –0.05 1.25±0.15 10.16 3.5±0.3 3.15 3.85 ±0.35 ±0.4 3.5±0.3 3.2±0.4 4.15±0.4 7.62 0.50±0.1 0.25 M 1.25±0.15 0.50±0.10 0.25 M +0.1 0.25–0.05 2.54 0 to 15° 2.54 Lead Bending Type (Gull-Wing) Long Creepage Distance (Gull-Wing) PS2562L2-1 PS2562L-1 4.6±0.35 4.6±0.35 3 1 2 3 1 2 2.54 PHOTOCOUPLER CONSTRUCTION Unit (MIN.) Air Distance 7 mm Outer Creepage Distance 7 mm Inner Creepage Distance 4 mm Isolation Thickness 2 0.25–0.05 +0.1 0.9±0.25 10.16 +0.2 2.54 0.15 Parameter 0.25±0.2 3.5±0.3 0.1 +0.1 –0.05 0.25 +0.1 –0.05 6.5±0.5 3.5±0.3 0.25 M 0.25 1.25±0.15 0.25 M 0.9±0.25 9.60±0.4 1.25±0.15 4 6.5±0.5 4 0.4 mm Data Sheet PN10235EJ04V0DS 11.8–0.5 PS2562-1,PS2562L-1,PS2562L1-1,PS2562L2-1 MARKING EXAMPLE No. 1 pin Mark 2562 MJ931 M J Assembly Lot 9 31 Week Assembled Year Assembled (Last 1 Digit) In-house Code CTR Rank Code Package New PKG Made in Japan J Data Sheet PN10235EJ04V0DS 3 PS2562-1,PS2562L-1,PS2562L1-1,PS2562L2-1 ORDERING INFORMATION Part Number Order Number Solder Plating Packing Style Safety Standard Specification Pb-Free Approval PS2562-1 PS2562-1-A Magazine case 100 pcs Standard products PS2562L-1 PS2562L-1-A (UL, CSA, BSI, PS2562L1-1 PS2562L1-1-A SEMKO, NEMKO, PS2562L2-1 PS2562L2-1-A DEMKO, FIMKO PS2562L-1-F3 PS2562L-1-F3-A Embossed Tape 2 000 pcs/reel PS2562L2-1-E3 PS2562L2-1-E3-A Embossed Tape 1 000 pcs/reel PS2562-1-V PS2562-1-V-A Magazine case 100 pcs PS2562L-1-V PS2562L-1-V-A (VDE0884 Part2) PS2562L1-1-V PS2562L1-1-V-A approved products PS2562L2-1-V PS2562L2-1-V-A (option) PS2562L-1-V-F3 PS2562L-1-V-F3-A Embossed Tape 2 000 pcs/reel PS2562L2-1-V-E3 PS2562L2-1-V-E3-A Embossed Tape 1 000 pcs/reel approved) DIN EN60747-5-2 *1 For the application of the Safety Standard, following part number should be used. 4 Data Sheet PN10235EJ04V0DS Application Part Number PS2562-1 *1 PS2562-1,PS2562L-1,PS2562L1-1,PS2562L2-1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) Parameter Symbol Ratings Unit Reverse Voltage VR 6 V Forward Current (DC) IF 80 mA ΔPD/°C 1.5 mW/°C PD 150 mW IFP 1 A Collector to Emitter Voltage VCEO 40 V Emitter to Collector Voltage VECO 6 V IC 200 mA ΔPC/°C 2.0 mW/°C PC 200 mW BV 5 000 Vr.m.s. Operating Ambient Temperature TA –55 to +100 °C Storage Temperature Tstg –55 to +150 °C Diode Power Dissipation Derating Power Dissipation *1 Peak Forward Current Transistor Collector Current Power Dissipation Derating Power Dissipation Isolation Voltage *2 *1 PW = 100 μs, Duty Cycle = 1% *2 AC voltage for 1 minute at TA = 25°C, RH = 60% between input and output. Pins 1-2 shorted together, 3-4 shorted together. Data Sheet PN10235EJ04V0DS 5 PS2562-1,PS2562L-1,PS2562L1-1,PS2562L2-1 ELECTRICAL CHARACTERISTICS (TA = 25°C) Parameter Diode Transistor Symbol Conditions Forward Voltage VF IF = 10 mA Reverse Current IR VR = 5 V Terminal Capacitance Ct V = 0 V, f = 1.0 MHz ICEO VCE = 40 V, IF = 0 mA CTR IF = 1 mA, VCE = 2 VDC Collector to Emitter Dark MIN. TYP. MAX. Unit 1.17 1.4 V 5 μA 50 pF 400 nA Current Coupled Current Transfer Ratio 200 2 000 % *1 (IC/IF) Collector Saturation VCE (sat) IF = 1 mA, IC = 2 mA 1.0 V Voltage VI-O = 1.0 kVDC Isolation Capacitance CI-O V = 0 V, f = 1.0 MHz 0.5 pF *2 Rise Time tr VCC = 10 V, IC = 10 mA, RL = 100 Ω 100 μs *2 tf 100 *1 CTR rank K : 2 000 to (%) L : 700 to 3 400 (%) M : 200 to 1 000 (%) *2 Test circuit for switching time Pulse Input VCC PW = 1 ms Duty Cycle = 1/10 IF 50 Ω 6 Ω RI-O Fall Time 10 11 Isolation Resistance VOUT RL = 100 Ω Data Sheet PN10235EJ04V0DS PS2562-1,PS2562L-1,PS2562L1-1,PS2562L2-1 TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified) DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE Transistor Power Dissipation PC (mW) Diode Power Dissipation PD (mW) 150 100 1.5 mW/°C 50 0 25 50 75 100 125 25 100 75 125 150 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 160 5 mA 140 TA = +100°C +60°C +25°C 5 0°C –25°C –55°C 1 0.5 120 100 80 2 mA 60 40 1 mA 20 0.8 50 FORWARD CURRENT vs. FORWARD VOLTAGE Collector Current IC (mA) Forward Current IF (mA) 50 Ambient Temperature TA (°C) 0.1 0.9 1.0 1.1 1.2 1.4 1.3 0 1.5 IF = 0.5 mA 2 4 6 8 10 Forward Voltage VF (V) Collector to Emitter Voltage VCE (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 200 VCE = 2 V 5V 10 V 24 V 40 V 1000 100 10 1 –50 –25 0 25 50 75 100 2 mA 50 1 mA 10 0.5 mA 5 0.2 mA 1 0.5 0.2 0.4 Ambient Temperature TA (°C) Remark 5 mA 100 10 000 Collector Current IC (mA) Collector to Emitter Dark Current ICEO (nA) 2 mW/°C 100 Ambient Temperature TA (°C) 10 0.7 150 0 150 100 50 200 IF = 0.1 mA 0.6 0.8 1.0 1.2 1.4 1.6 Collector Saturation Voltage VCE (sat) (V) The graphs indicate nominal characteristics. Data Sheet PN10235EJ04V0DS 7 PS2562-1,PS2562L-1,PS2562L1-1,PS2562L2-1 CURRENT TRANSFER RATIO vs. FORWARD CURRENT 8 000 1.4 Normalized to 1.0 at TA = 25°C, IF = 1 mA, VCE = 2 V 1.2 Current Transfer Ratio CTR (%) Normalized Current Transfer Ratio CTR NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE 1.0 0.8 0.6 0.4 0.2 –25 0 25 50 75 3 000 2 000 1 000 0.1 100 1 5 10 30 Forward Current IF (mA) SWITCHING TIME vs. LOAD RESISTANCE CURRENT TRANSFER RATIO vs. FORWARD CURRENT 3 000 tf 100 50 Current Transfer Ratio CTR (%) VCC = 5 V, 500 IC = 2 mA, CTR = 2 280% tr td 10 5 ts 100 500 1k VCE = 2 V 2 500 2 000 Sample A B C D 1 500 1 000 500 0 5k 10 50 100 500 Load Resistance RL (Ω) Forward Current IF ( μ A) SWITCHING TIME vs. LOAD RESISTANCE FREQUENCY RESPONSE 10 000 5 000 tf VCC = 5 V, IF = 1 mA, CTR = 2 280% 1 000 500 ts 100 50 tr IF = 1 mA, VCE = 2 V 0 Normalized Gain GV 2 30 50 0.5 Ambient Temperature TA (°C) 1 000 Switching Time t ( μ s) 6 000 Sample A B C 5 000 D 4 000 0 –50 Switching Time t ( μ s) VCE = 2 V 7 000 –5 –10 –15 RL = 100 Ω –20 10 td 300 500 1k 5k 10 k 50 k 100 k Load Resistance RL (Ω) Remark 8 0.2 0.5 1 2 5 10 20 Frequency f (kHz) The graphs indicate nominal characteristics. Data Sheet PN10235EJ04V0DS 50 100 200 PS2562-1,PS2562L-1,PS2562L1-1,PS2562L2-1 LONG TERM CTR DEGRADATION 1.2 IF = 1 mA CTR (Relative Value) 1.0 TA = 25°C 0.8 TA = 60°C 0.6 0.4 0.2 0 10 102 103 104 105 106 Time (Hr) Remark The graph indicates nominal characteristics. Data Sheet PN10235EJ04V0DS 9 PS2562-1,PS2562L-1,PS2562L1-1,PS2562L2-1 TAPING SPECIFICATIONS (UNIT : mm) 1.55±0.1 4.5 MAX. 10.3±0.1 1.5 +0.1 –0 16.0±0.3 2.0±0.1 4.0±0.1 1.75±0.1 Outline and Dimensions (Tape) 7.5±0.1 4.0±0.1 5.3±0.1 8.0±0.1 0.4 Tape Direction PS2562L-1-F3 Outline and Dimensions (Reel) 2.0±0.5 R 1.0 φ 21.0±0.8 φ 100±1.0 2.0±0.5 φ 13.0±0.2 φ 330±2.0 17.5±1.0 21.5±1.0 Packing: 2 000 pcs/reel 10 Data Sheet PN10235EJ04V0DS 15.9 to 19.4 Outer edge of flang PS2562-1,PS2562L-1,PS2562L1-1,PS2562L2-1 2.05±0.1 4.4±0.2 12.35±0.15 11.5±0.1 1.55±0.1 24.0±0.3 2.0±0.1 4.0±0.1 1.75±0.1 Outline and Dimensions (Tape) 6.6±0.2 0.38 12.0±0.1 Tape Direction PS2562L2-1-E3 Outline and Dimensions (Reel) R 1.0 φ 21.0±0.8 φ 100±1.0 2.0±0.5 φ13.0±0.2 φ 330±2.0 2.0±0.5 25.5±1.0 29.5±1.0 Packing: 1 000 pcs/reel Data Sheet PN10235EJ04V0DS 23.9 to 27.4 Outer edge of flange 11 PS2562-1,PS2562L-1,PS2562L1-1,PS2562L2-1 NOTES ON HANDLING 1. Recommended soldering conditions (1) Infrared reflow soldering • Peak reflow temperature 260°C or below (package surface temperature) • Time of peak reflow temperature 10 seconds or less • Time of temperature higher than 220°C 60 seconds or less • Time to preheat temperature from 120 to 180°C 120±30 s • Number of reflows Three • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) Package Surface Temperature T (°C) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s 260°C MAX. 220°C to 60 s 180°C 120°C 120±30 s (preheating) Time (s) (2) Wave soldering • Temperature 260°C or below (molten solder temperature) • Time 10 seconds or less • Preheating conditions 120°C or below (package surface temperature) • Number of times One (Allowed to be dipped in solder including plastic mold portion.) • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (3) Soldering by soldering iron • Peak temperature (lead part temperature) 350°C or below • Time (each pins) 3 seconds or less • Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead. (b) Please be sure that the temperature of the package would not be heated over 100°C. 12 Data Sheet PN10235EJ04V0DS PS2562-1,PS2562L-1,PS2562L1-1,PS2562L2-1 (4) Cautions • Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. 2. Cautions regarding noise Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between collector-emitters at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum ratings. 3. Measurement conditions of current transfer ratios (CTR), which differ according to photocoupler Check the setting values before use, since the forward current conditions at CTR measurement differ according to product. When using products other than at the specified forward current, the characteristics curves may differ from the standard curves due to CTR value variations or the like. Therefore, check the characteristics under the actual operating conditions and thoroughly take variations or the like into consideration before use. USAGE CAUTIONS 1. Protect against static electricity when handling. 2. Avoid storage at a high temperature and high humidity. Data Sheet PN10235EJ04V0DS 13 PS2562-1,PS2562L-1,PS2562L1-1,PS2562L2-1 SPECIFICATION OF VDE MARKS LICENSE DOCUMENT Parameter Symbol Climatic test class (IEC 60068-1/DIN EN 60068-1) Speck Unit 55/100/21 Dielectric strength maximum operating isolation voltage UIORM 890 Vpeak Upr = 1.5 × UIORM, Pd < 5 pC Upr 1 335 Vpeak Test voltage (partial discharge test procedure b for all devices test) Upr 1 669 Vpeak UTR 8 000 Vpeak Test voltage (partial discharge test procedure a for type test and random test) Upr = 1.875 × UIORM, Pd < 5 pC Highest permissible overvoltage Degree of pollution (DIN EN 60664-1 VDE0110 Part 1) Comparative tracking index (IEC 60112/DIN EN 60112 (VDE 0303 Part 11)) 2 CTI Material group (DIN EN 60664-1 VDE0110 Part 1) 175 III a Storage temperature range Tstg –55 to +150 °C Operating temperature range TA –55 to +100 °C VIO = 500 V dc at TA = 25 °C Ris MIN. 10 12 Ω VIO = 500 V dc at TA MAX. at least 100 °C Ris MIN. 10 11 Ω Package temperature Tsi 175 °C Current (input current IF, Psi = 0) Isi 400 mA Power (output or total power dissipation) Psi 700 mW Ris MIN. 10 Isolation resistance, minimum value Safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) Isolation resistance VIO = 500 V dc at TA = 175 °C (Tsi) 14 Data Sheet PN10235EJ04V0DS 9 Ω PS2562-1,PS2562L-1,PS2562L1-1,PS2562L2-1 Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. • Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. • Do not burn, destroy, cut, crush, or chemically dissolve the product. • Do not lick the product or in any way allow it to enter the mouth. NOTICE 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. 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