1N990B

1N957B THRU 1N992B SILICON ZENER DIODE 6.8 VOLTS THRU 200 VOLTS 500mW, 5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N957B Series Silicon Zener Diode is a high quality voltage regulator designed for use in industrial, commercial, entertainment and computer applications. DO-35 CASE MAXIMUM RATINGS: (TL=75°C) Power Dissipation Operating and Storage Junction Temperature VZ Tolerance: Part number with “B” suffix VZ Tolerance: Part number with “C” suffix VZ Tolerance: Part number with “D” suffix SYMBOL PD TJ, Tstg 500 -65 to +200 ±5 ±2 ±1 UNITS mW °C % % % ELECTRICAL CHARACTERISTICS: (TA=25°C) VF=1.5V MAX @ IF=200mA (for all types) ZENER VOLTAGE TYPE MIN V 1N957B 1N958B 1N959B 1N960B 1N961B 1N962B 1N963B 1N964B 1N965B 1N966B 1N967B 1N968B 1N969B 1N970B 1N971B 1N972B 1N973B 1N974B 1N975B 1N976B 1N977B 1N978B 1N979B 1N980B 1N981B 1N982B 6.460 7.125 7.790 8.645 9.500 10.45 11.40 12.35 14.25 15.20 17.10 19.00 20.90 22.80 25.65 28.50 31.35 34.20 37.05 40.85 44.65 48.45 53.20 58.90 64.60 71.25 VZ @ IZT NOM V 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 MAX V 7.140 7.875 8.610 9.555 10.50 11.55 12.60 13.65 15.75 16.80 18.90 21.00 23.10 25.20 28.35 31.50 34.65 37.80 40.95 45.15 49.35 53.55 58.80 65.10 71.40 78.75 TEST CURRENT IZT mA 18.5 16.5 15.0 14.0 12.5 11.5 10.5 9.5 8.5 7.8 7.0 6.2 5.6 5.2 4.6 4.2 3.8 3.4 3.2 3.0 2.7 2.5 2.2 2.0 1.8 1.7 MAXIMUM ZENER IMPEDANCE ZZT @ IZT Ω 4.5 5.5 6.5 7.5 8.5 9.5 11.5 13.0 16.0 17.0 21.0 25.0 29.0 33.0 41.0 49.0 58.0 70.0 80.0 93.0 105 125 150 185 230 270 ZZK @ IZK Ω mA 700 700 700 700 700 700 700 700 700 700 750 750 750 750 750 1000 1000 1000 1000 1500 1500 2000 2000 2000 2000 2000 1.00 0.50 0.50 0.50 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 MAXIMUM REVERSE CURRENT IR μA 150 75 50 25 10 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 @ VR V 5.2 5.7 6.2 6.9 7.6 8.4 9.1 9.9 11.4 12.2 13.7 15.2 16.7 18.2 20.6 22.8 25.1 27.4 29.7 32.7 35.8 38.8 42.6 47.1 51.7 56.0 MAXIMUM ZENER CURRENT IZM mA 47 42 38 35 32 28 26 24 21 19 17 15 14 13 11 10 9.2 8.5 7.8 7.0 6.4 5.9 5.4 4.9 4.5 4.0 R1 (27-October 2011) 1N957B THRU 1N992B SILICON ZENER DIODE 6.8 VOLTS THRU 200 VOLTS 500mW, 5% TOLERANCE ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C) VF=1.5V MAX @ IF=200mA (for all types) ZENER VOLTAGE TYPE MIN V 1N983B 1N984B 1N985B 1N986B 1N987B 1N988B 1N989B 1N990B 1N991B 1N992B 77.90 86.45 95.00 104.5 114.0 123.5 142.5 152.0 171.0 190.0 VZ @ IZT NOM V 82 91 100 110 120 130 150 160 180 200 MAX V 86.10 95.55 105.0 115.5 126.0 136.5 157.5 168.0 189.0 210.0 TEST CURRENT IZT mA 1.5 1.4 1.3 1.1 1.0 0.95 0.85 0.80 0.68 0.65 MAXIMUM ZENER IMPEDANCE ZZT @ IZT Ω 330 400 500 750 900 1100 1500 1700 2200 2500 ZZK @ IZK Ω mA 3000 3000 3000 4000 4500 5000 6000 6500 7100 8000 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 MAXIMUM REVERSE CURRENT IR μA 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 @ VR V 62.2 69.2 76.0 83.6 91.2 98.8 114.0 121.6 136.8 152.0 MAXIMUM ZENER CURRENT IZM mA 3.7 3.3 3.0 2.7 2.5 2.3 2.0 1.9 1.7 1.5 DO-35 CASE - MECHANICAL OUTLINE R1 (27-October 2011) w w w. c e n t r a l s e m i . c o m 1N957B THRU 1N992B SILICON ZENER DIODE 6.8 VOLTS THRU 200 VOLTS 500mW, 5% TOLERANCE TYPICAL ELECTRICAL CHARACTERISTICS R1 (27-October 2011) w w w. c e n t r a l s e m i . c o m