2N3114

2N3114 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3114 is a NPN Silicon Transistor, mounted in a hermetically sealed package, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage Continuous Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature VEBO IC PD PD TJ, Tstg 150 150 5.0 200 0.8 5.0 -65 to +200 MAX 10 10 100 UNITS V V V mA W W °C UNITS nA µA nA V V V ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=100V ICBO VCB=100V, TA=150°C IEBO BVCBO BVCEO BVEBO VCE(SAT) VBE(SAT) hFE hFE hFE fT Cob Cib VEB=4.0V IC=100µA IC=30mA IE=100µA IC=50mA, IB=5.0mA IC=50mA, IB=5.0mA VCE=10V, IC=0.1mA VCE=10V, IC=30mA VCE=10V, IC=30mA, TA=–55°C VCE=10V, IC=30mA, f=20MHz VCB=20V, IE=0, f=140kHz VEB=0.5V, IC=0, f=140kHz 150 150 5.0 1.0 0.9 15 30 12 40 9.0 80 120 V V MHz pF pF R0 (4-November 2010) 2N3114 NPN SILICON TRANSISTOR TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R0 (4-November 2010 w w w. c e n t r a l s e m i . c o m