BAW101

NE W BAW101 Central DESCRIPTION TM Semiconductor Corp. DUAL, ISOLATED HIGH VOLTAGE SWITCHING DIODES The CENTRAL SEMICONDUCTOR BAW101 type is a Silicon Dual Isolated High Voltage Switching diode designed for surface mount switching applications requiring high voltage capabilities. Marking Code is CJP. SOT-143 CASE MAXIMUM RATINGS (TA=25°C) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Forward Surge Current, tp=1 ms Power Dissipation Operating and Storage Junction Temperature Thermal Resistance TJ,Tstg -65 to +150 357 °C °C/W SYMBOL VR VRRM IF IFRM IFSM PD 300 300 200 500 4500 350 UNITS V V mA mA mA mW QJA ELECTRICAL CHARACTERISTICS PER DIODE (TA=25°C unless otherwise noted) SYMBOL IR IR BVR VF CT trr TEST CONDITIONS VR=250V VR=250V, TA=150°C IR=100mA IF=100mA VR=0V, f=1.0MHz IF=IR=30mA, Irr=3.0mA, RL=100W MIN TYP MAX 150 50 UNITS nA mA V V pF ns 300 0.9 1.3 5.0 50 90 All Dimensions in Inches (mm). TOP VIEW LEAD CODE: 1) 2) 3) 4) Cathode 1 Cathode 2 Anode 2 Anode 1 R2 91