BCX55

BCX54 BCX55 BCX56 SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX54, BCX55, and BCX56 types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current general purpose amplifier applications. MARKING CODE: SEE MARKING CODE TABLE ON FOLLOWING PAGE SOT-89 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Peak Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD TJ, Tstg ΘJA BCX54 45 45 BCX55 60 60 5.0 1.0 1.5 100 200 1.3 -65 to +150 96 BCX56 100 80 UNITS V V V A A mA mA W °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL ICBO ICBO IEBO BVCBO BVCBO BVCBO BVCEO BVCEO BVCEO VCE(SAT) VBE(ON) hFE hFE hFE hFE hFE fT TEST CONDITIONS VCB=30V VCB=30V, TA=125°C VEB=5.0V IC=100µA (BCX54) IC=100µA (BCX55) IC=100µA (BCX56) IC=10mA (BCX54) IC=10mA (BCX55) IC=10mA (BCX56) IC=500mA, IB=50mA VCE=2.0V, IC=500mA VCE=2.0V, IC=5.0mA VCE=2.0V, IC=150mA VCE=2.0V, IC=150mA (BCX54-10, BCX55-10, BCX56-10) VCE=2.0V, IC=150mA (BCX54-16, BCX55-16, BCX56-16) VCE=2.0V, IC=500mA VCE=5.0V, IC=10mA, f=100MHz MIN TYP MAX 100 10 100 UNITS nA µA nA V V V V V V V V 45 60 100 45 60 80 0.5 1.0 40 63 63 100 25 130 250 160 250 MHz R5 (20-November 2009) BCX54 BCX55 BCX56 SURFACE MOUNT NPN SILICON TRANSISTOR SOT-89 CASE - MECHANICAL OUTLINE LEAD CODE: 1) EMITTER 2) COLLECTOR 3) BASE DEVICE BCX54 BCX54-10 BCX54-16 BCX55 BCX55-10 BCX55-16 BCX56 BCX56-10 BCX56-16 MARKING CODE BA BC BD BE BG BM BH BK BL (Bottom View) R5 (20-November 2009) w w w. c e n t r a l s e m i . c o m