CMLDM3737

CMLDM3737 SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM3737 consists of Dual N-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Very Low rDS(ON) and Low Threshold Voltage. MARKING CODE: 7C3 FEATURES: • ESD Protection up to 2kV • 350mW Power Dissipation • Very Low rDS(ON) • Low Threshold Voltage • Logic Level Compatible • Small, SOT-563 Surface Mount Package • Complementary Dual P-Channel Device: CMLDM5757 SYMBOL VDS VGS ID IDM PD PD PD TJ, Tstg ΘJA UNITS V V mA A mW mW mW °C °C/W MAX 5.0 1.0 1.0 1.2 0.55 0.7 0.9 ID=500mA ID=500mA 1.58 0.17 0.24 UNITS μA μA V V V Ω Ω Ω nC nC nC SOT-563 CASE APPLICATIONS: • Load Switch / Level Shifting • Battery Charging • Boost Switch • Electro-luminescent Backlighting MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current (tp=10μs) Power Dissipation (Note 1) Power Dissipation (Note 2) Power Dissipation (Note 3) Operating and Storage Junction Temperature Thermal Resistance (Note 1) 20 8.0 540 1.5 350 300 150 -65 to +150 357 ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C) SYMBOL TEST CONDITIONS MIN TYP IGSSF, IGSSR VGS=4.5V, VDS=0 IDSS VDS=16V, VGS=0 BVDSS VGS(th) VSD rDS(ON) rDS(ON) rDS(ON) Qg(tot) Qgs Qgd VGS=0, ID=250μA VDS=VGS, ID=250μA VGS=0, IS=350mA VGS=4.5V, ID=540mA VGS=2.5V, ID=500mA VGS=1.8V, ID=350mA VDS=10V, VDS=10V, VGS=4.5V, VGS=4.5V, 20 0.45 VDS=10V, VGS=4.5V, ID=500mA Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2 (2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2 (3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2 R1 (28-October 2010) CMLDM3737 SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (TA=25°C) SYMBOL TEST CONDITIONS TYP MAX Crss VDS=16V, VGS=0, f=1.0MHz 20 Ciss VDS=16V, VGS=0, f=1.0MHz 150 Coss ton toff VDS=16V, VGS=0, f=1.0MHz VDD=10V, VGS=4.5V, ID=540mA, RG=10Ω VDD=10V, VGS=4.5V, ID=540mA, RG=10Ω 25 10 25 UNITS pF pF pF ns ns SOT-563 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Source Q1 2) Gate Q1 3) Drain Q2 4) Source Q2 5) Gate Q2 6) Drain Q1 MARKING CODE: 7C3 R1 (28-October 2010) w w w. c e n t r a l s e m i . c o m