CMUT5401E

CMUT5401E ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUT5401E is a PNP Silicon Transistor, packaged in an SOT-523 case, designed for general purpose amplifier applications requiring high breakdown voltage and small space saving packaging. MARKING CODE: 4C5 FEATURES: • High Collector Breakdown Voltage 250V • Low Leakage Current 50nA Max APPLICATIONS: • Low Saturation Voltage 150mV Max @ 50mA • General purpose switching and amplification • Complementary Device CMUT5551E • Telephone applications • SOT-523 Surface Mount Package SOT-523 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 250 220 7.0 600 250 -65 to +150 500 UNITS V V V mA mW °C °C/W ♦ Collector-Base Voltage ♦ Collector-Emitter Voltage ♦ Emitter-Base Voltage Power Dissipation Continuous Collector Current Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO ICBO IEBO VCB=120V VCB=120V, TA=100°C VEB=3.0V IC=100µA IC=1.0mA IE=10µA IC=10mA, IC=50mA, IB=1.0mA IB=5.0mA 250 220 7.0 MAX 50 50 50 UNITS nA μA nA V V V ♦ BVCBO ♦ BVCEO ♦ BVEBO ♦ VCE(SAT) ♦ VCE(SAT) VBE(SAT) VBE(SAT) 100 150 1.00 1.00 mV mV V V IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA ♦ Enhanced Specification R1 (9-February 2010) CMUT5401E ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS VCE=5.0V, IC=1.0mA VCE=5.0V, IC=10mA VCE=5.0V, IC=50mA VCE=10V, IC=150mA VCE=10V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=5.0V, IC=200μA, RS=10Ω, f=10Hz to 15.7kHz 40 MIN 100 100 75 25 100 300 6.0 200 MHz pF 300 MAX UNITS ♦ hFE ♦ hFE ♦ hFE ♦ hFE fT Cob hfe NF 8.0 dB ♦ Enhanced Specification SOT-523 CASE - MECHANICAL OUTLINE (Bottom View) LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODE: 4C5 R1 (9-February 2010) w w w. c e n t r a l s e m i . c o m