CMUT5551_10

CMUT5551 SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications. MARKING CODE: 55C SOT-523 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 180 160 6.0 600 250 -65 to +150 500 UNITS V V V mA mW °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO ICBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE fT Cob hfe NF VCB=120V VCB=120V, TA=100°C IC=100μA IC=1.0mA IE=10μA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA VCE=5.0V, IC=1.0mA VCE=5.0V, IC=10mA VCE=5.0V, IC=50mA VCE=10V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=5.0V, IC=200μA, RS=10Ω, f=10Hz to 15.7kHz 80 80 30 100 50 MAX 50 50 UNITS nA μA V V V 180 160 6.0 0.15 0.20 1.00 1.00 250 300 6.0 200 8.0 V V V V MHz pF dB R1 (9-February 2010) CMUT5551 SURFACE MOUNT NPN SILICON TRANSISTOR SOT-523 CASE - MECHANICAL OUTLINE (Bottom View) LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODE: 55C R1 (9-February 2010) w w w. c e n t r a l s e m i . c o m