CP316V_10

PROCESS Small Signal Transistors CP316V NPN - High Voltage Transistor Chip PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 5 INCH WAFER 57,735 PRINCIPAL DEVICE TYPES CMPT5551 CXT5551 CZT5551 2N5551 EPITAXIAL PLANAR 20 x 20 MILS 7.1 MILS 4.0 x 4.0 MILS 4.7 x 4.7 MILS Al - 30,000Å Au - 18,000Å R2 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS CP316V Typical Electrical Characteristics R2 (22-March 2010) w w w. c e n t r a l s e m i . c o m