CQDD-12M_10

CQDD-12M CQDD-12N SURFACE MOUNT 12 AMP SILICON TRIAC 600 THRU 800 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CQDD-12M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING: FULL PART NUMBER D2PAK CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) Peak Repetitive Off-State Voltage RMS On-State Current (TC=90°C) Peak One Cycle Surge, t=8.3ms I2t Value for Fusing, t=8.3ms Peak Gate Power, tp=10μs Average Gate Power Dissipation Peak Gate Current, tp=10μs Peak Gate Voltage, tp=10μs Critical Rate of Rise of On-State Current Repetitive, f=60Hz Operating Junction Temperature Storage Temperature Thermal Resistance Thermal Resistance SYMBOL VDRM IT(RMS) ITSM I2t PGM PG(AV) IGM VGM di/dt TJ Tstg ΘJA ΘJC CQDD-12M 600 12 80 27 40 CQDD-12N UNITS 800 V A A A2s W W A V A/μs °C °C °C/W °C/W 1.0 4.0 16 10 -40 to +125 -40 to +150 60 2.7 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM IDRM IGT IGT IH VGT VGT VTM dv/dt Rated VDRM Rated VDRM, TC=125°C VD=12V, RL=10Ω, QUAD I, II, III VD=12V, RL=10Ω, QUAD IV IT=100mA VD=12V, RL=10Ω, QUAD I, II, III VD=12V, RL=10Ω, QUAD IV ITM=17A, tp=380μs VD=2 /3 VDRM, RGK=∞, TC=125°C 10 TYP MAX 10 500 UNITS μA μA mA mA mA V V V V/μs 9.9 24.3 14.1 1.10 2.10 1.33 20 50 25 1.50 2.50 1.50 R2 (12-February 2010) CQDD-12M CQDD-12N SURFACE MOUNT 12 AMP SILICON TRIAC 600 THRU 800 VOLTS D2PAK CASE - MECHANICAL OUTLINE LEAD CODE: 1) MT1 2) MT2 3) Gate 4) MT2 MARKING: FULL PART NUMBER R2 (12-February 2010) w w w. c e n t r a l s e m i . c o m