CQDD-16N

CQDD-16M CQDD-16N 16 AMP TRIAC 600 THRU 800 VOLTS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CQDD-16M series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING CODE: FULL PART NUMBER D2PAK CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Peak Repetitive Off-State Voltage RMS On-State Current (TC=90°C) Peak One Cycle Surge (t=8.3ms) I2t Value for Fusing (t=8.3ms) Peak Gate Power (tp=10µs) Average Gate Power Dissipation Peak Gate Current (tp=10µs) Peak Gate Voltage (tp=10µs) Critical Rate of Rise of On-State Current Repetitive (f=60Hz) Storage Temperature Junction Temperature Thermal Resistance Thermal Resistance di/dt Tstg TJ ΘJA ΘJC 10 -40 to +150 -40 to +125 60 2.3 A/µs °C °C °C/W °C/W VDRM IT(RMS) ITSM I2t PGM PG (AV) IGM VGM CQDD -16M 600 16 110 50 40 1.0 6.0 16 CQDD -16N 800 UNITS V A A A2s W W A V ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM IDRM IGT IGT IH VGT VGT VTM dv/dt Rated VDRM Rated VDRM, TC=125°C VD=12V, RL=10Ω, QUAD I, II, III VD=12V, RL=10Ω, QUAD IV IT=100mA VD=12V, RL=10Ω, QUAD I, II, III VD=12V, RL=10Ω, QUAD IV ITM=22.5A, tp=380µs VD=2 /3 VDRM, RGK=∞, TC=125°C 10 TYP MAX 10 2.0 UNITS µA mA mA mA mA V V V V/µs 10.9 55.2 9.8 0.97 1.51 1.35 25 75 25 1.50 2.50 1.60 R1 (24-September 2004) Central TM Semiconductor Corp. CQDD-16M CQDD-16N 16 AMP TRIAC 600 THRU 800 VOLTS D2PAK CASE - MECHANICAL OUTLINE LEAD CODE: 1) MT1 2) MT2 3) GATE 4) MT2 MARKING CODE: FULL PART NUMBER DIMENSIONS INCHES MILLIMETERS SYMBOL MIN MAX MIN MAX A 0.163 0.189 4.14 4.80 B 0.045 0.055 1.14 1.40 C 0.000 0.010 0.00 0.25 D 0.012 0.028 0.30 0.70 E 0.386 0.409 9.80 10.40 F 0.378 0.417 9.60 10.60 G 0.335 0.358 8.50 9.10 H 0.197 0.236 5.00 6.00 J 0.093 0.108 2.35 2.75 K 0.030 0.035 0.75 0.90 D2PAK (REV: R2) R1 (24-September 2004)