CSD-8N

CSD-8M CSD-8N 8.0 AMP SCR 600 THRU 800 VOLTS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CSD-8M series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications and control systems. MARKING CODE: FULL PART NUMBER DPAK THYRISTOR CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Peak Repetitive Off-State Voltage RMS On-State Current (TC=90°C) Peak One Cycle Surge (t=10ms) I2t Value for Fusing (t=10ms) Peak Gate Power (tp=10µs) Average Gate Power Dissipation Peak Forward Gate Current (tp=10µs) Peak Forward Gate Voltage (tp=10µs) Peak Reverse Gate Voltage (tp=10µs) Critical Rate of Rise of On-State Current Storage Temperature Junction Temperature VDRM, VRRM IT(RMS) ITSM I 2t PGM PG (AV) IFGM VFGM VRGM di/dt Tstg TJ CSD -8M 600 8.0 80 32 40 1.0 4.0 16 5.0 50 -40 to +150 -40 to +125 CSD -8N 800 UNITS V A A A 2s W W A V V A/µs °C °C ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM, IRRM IDRM, IRRM IGT IH VGT VTM dv/dt Rated VDRM, VRRM Rated VDRM, VRRM, TC=125°C VD=12V, RL=10Ω IT=100mA VD=12V, RL=10Ω ITM=16A, tp=380µs VD=2 /3 VDRM, TC=125°C 200 TYP MAX 10 2.0 UNITS µA mA mA mA V V V/µs 3.0 7.3 0.9 1.3 15 20 1.5 1.8 R0 (20-May 2004) Central TM Semiconductor Corp. CSD-8M CSD-8N 8.0 AMP SCR 600 THRU 800 VOLTS DPAK THYRISTOR CASE - MECHANICAL OUTLINE LEAD CODE: 1) CATHODE 2) ANODE 3) GATE 4) ANODE MARKING CODE: FULL PART NUMBER SYMBOL A B C D E F G H J K L M N DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0.086 0.094 2.18 2.39 0.018 0.032 0.46 0.81 0.035 0.050 0.89 1.27 0.205 0.228 5.21 5.79 0.047 0.055 1.20 1.40 0.018 0.024 0.45 0.60 0.250 0.268 6.35 6.81 0.205 0.215 5.20 5.46 0.235 0.245 5.97 6.22 0.100 0.108 2.55 2.74 0.025 0.040 0.64 1.02 0.025 0.035 0.64 0.89 0.090 2.28 DPAK THYRISTOR (REV: R0) R0 (20-May 2004)