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CSDD-12M_10

CSDD-12M_10

  • 厂商:

    CENTRAL

  • 封装:

  • 描述:

    CSDD-12M_10 - SURFACE MOUNT SILICON CONTROLLED RECTIFIER 12 AMP, 600 THRU 800 VOLTS - Central Semico...

  • 数据手册
  • 价格&库存
CSDD-12M_10 数据手册
CSDD-12M CSDD-12N SURFACE MOUNT SILICON CONTROLLED RECTIFIER 12 AMP, 600 THRU 800 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CSDD-12M series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications and control systems. MARKING: FULL PART NUMBER D2PAK CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL CSDD-12M CSDD-12N Peak Repetitive Off-State Voltage VDRM, VRRM 600 800 RMS On-State Current (TC=90°C) IT(RMS) 12 Peak One Cycle Surge, t=10ms I2t Value for Fusing, t=10ms Peak Gate Power, tp=10μs Average Gate Power Dissipation Peak Forward Gate Current, tp=10μs Peak Forward Gate Voltage, tp=10μs Peak Reverse Gate Voltage, tp=10μs Critical Rate of Rise of On-State Current Operating Junction Temperature Storage Temperature Thermal Resistance Thermal Resistance ITSM I2t PGM PG(AV) IFGM VFGM VRGM di/dt TJ Tstg ΘJA ΘJC 110 60 40 1.0 4.0 16 5.0 100 -40 to +125 -40 to +150 60 2.5 UNITS V A A A2s W W A V V A/μs °C °C °C/W °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM, IRRM IDRM, IRRM IGT IH VGT VTM dv/dt Rated VDRM, VRRM Rated VDRM, VRRM, TC=125°C VD=12V, RL=10Ω IT=100mA VD=12V, RL=10Ω ITM=24A, tp=380μs VD=2 /3 VDRM, TC=125°C 200 TYP MAX 10 3.0 UNITS μA mA mA mA V V V/μs 3.5 8.7 0.64 1.21 15 20 1.50 1.60 R2 (17-February 2010) CSDD-12M CSDD-12N SURFACE MOUNT SILICON CONTROLLED RECTIFIER 12 AMP, 600 THRU 800 VOLTS D2PAK CASE - MECHANICAL OUTLINE LEAD CODE: 1) Cathode 2) Anode 3) Gate 4) Anode MARKING: FULL PART NUMBER R2 (17-February 2010) w w w. c e n t r a l s e m i . c o m
CSDD-12M_10 价格&库存

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