CXT7820

CXT7820 SURFACE MOUNT VERY LOW VCE(SAT) PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT7820 is a very low VCE(SAT) PNP transistor designed for applications where electrical and thermal efficiency are prime requirements. Packaged in an industry standard SOT-89 case, this device brings updated electrical specifications and characteristics suitable for the most demanding designs. MARKING: FULL PART NUMBER SOT-89 CASE • Device is Halogen Free by design FEATURES: APPLICATIONS: • High Current (IC=1.0A) • VCE(SAT)=0.34V MAX @ IC=1.0A • SOT-89 surface mount package • Complementary NPN device: CXT3820 MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance • DC/DC Converters • Voltage Clamping • Protection Circuits • Battery powered Cell Phones, Pagers, Digital Cameras, PDAs, Laptops, etc. SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg ΘJA UNITS V V V A A mA W °C °C/W 80 60 5.0 1.0 2.0 300 1.2 -65 to +150 104 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=60V IEBO VEB=5.0V BVCBO IC=100µA 80 BVCEO IC=10mA 60 BVEBO IE=100µA 5.0 VCE(SAT) IC=100mA, IB=1.0mA VCE(SAT) IC=500mA, IB=50mA VCE(SAT) IC=1.0A, IB=100mA VBE(SAT) IC=1.0A, IB=50mA VBE(ON) VCE=5.0V, IC=1.0A hFE VCE=5.0V, IC=1.0mA 200 hFE VCE=5.0V, IC=500mA 150 hFE VCE=5.0V, IC=1.0A 100 fT VCE=10V, IC=50mA 150 Cob VCB=10V, IE=0, f=1.0MHz MAX 100 100 0.175 0.18 0.34 1.1 0.9 UNITS nA nA V V V V V V V V 15 MHz pF R1 (23-February 2010) CXT7820 SURFACE MOUNT VERY LOW VCE(SAT) PNP SILICON TRANSISTOR SOT-89 CASE - MECHANICAL OUTLINE (Bottom View) LEAD CODE: 1) Emitter 2) Collector 3) Base MARKING: FULL PART NUMBER R1 (23-February 2010) w w w. c e n t r a l s e m i . c o m