CZT5401E_10

CZT5401E ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT5401E is a PNP Silicon Transistor, packaged in an SOT-223 case, designed for general purpose amplifier applications requiring high breakdown voltage. MARKING: FULL PART NUMBER FEATURES: SOT-223 CASE APPLICATIONS: • General purpose switching and amplification • Telephone applications MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage • High Collector Breakdown Voltage 250V • Low Leakage Current 50nA MAX • Low Saturation Voltage 150mV MAX @ 50mA • Complementary Device: CZT5551E • SOT-223 Surface Mount Package SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 250 220 7.0 600 2.0 -65 to +150 62.5 UNITS V V V mA W °C °C/W ♦ ♦ Collector-Emitter Voltage ♦ Emitter-Base Voltage Power Dissipation Continuous Collector Current Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL ICBO ICBO IEBO TEST CONDITIONS VCB=120V VCB=120V, TA=100°C VEB=3.0V IC=100µA IC=1.0mA IE=10µA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA 250 220 7.0 100 150 1.00 1.00 MIN MAX 50 50 50 UNITS nA μA nA V V V mV mV V V ♦ BVCBO ♦ BVCEO ♦ BVEBO ♦ VCE(SAT) ♦ VCE(SAT) VBE(SAT) VBE(SAT) ♦ Enhanced specification R1 (1-March 2010) CZT5401E ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS VCE=5.0V, IC=1.0mA VCE=5.0V, IC=10mA VCE=5.0V, IC=50mA VCE=10V, IC=150mA VCE=10V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=5.0V, IC=200μA, RS=10Ω, f=10Hz to 15.7kHz ♦ Enhanced specification MIN 100 100 75 25 100 40 MAX 300 UNITS ♦ hFE ♦ hFE ♦ hFE ♦ hFE fT Cob hfe NF 300 6.0 200 8.0 MHz pF dB SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter 4) Collector MARKING: FULL PART NUMBER R1 (1-March 2010) w w w. c e n t r a l s e m i . c o m