N-Channel Enhancement Mode Field Effect Transistor FEATURES
Type CEP04N7G CEB04N7G CEF04N7G VDSS 700V 700V 700V RDS(ON) 3.3Ω 3.3Ω 3.3Ω ID 4A 4A 4A d @VGS 10V 10V 10V
CEP04N7G/CEB04N7G CEF04N7G
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
D
D
G
G D S G
CEP SERIES TO-220
S CEB SERIES TO-263(DD-PAK)
G
D
S
CEF SERIES TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Limit Symbol TO-220/263 VDS VGS ID IDM PD TJ,Tstg
e
TO-220F
Units V V
700
±30
4 16 84 0.67 -55 to 150 4
d d
A A W W/ C C
16 35 0.28
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA 1.5 62.5 Limit 3.6 65 Units C/W C/W
Details are subject to change without notice . 1
Rev 3. 2009.July http://www.cetsemi.com
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b
CEP04N7G/CEB04N7G CEF04N7G
Tc = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) Test Condition VGS = 0V, ID = 250µA VDS = 700V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 2A 2 2.5 Min 700 25 100 -100 4 3.3 Typ Max Units V
µA
4
nA nA V Ω
gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD
VDS = 40V, ID = 1A VDS = 25V, VGS = 0V, f = 1.0 MHz
2 595 80 20 18 17 40.5 19 14 3 6 2.5 36 34 81 38 18.2
S pF pF pF ns ns ns ns nC nC nC A V
VDD = 300V, ID = 4A, VGS = 10V, RGEN = 25Ω
VDS = 480V, ID = 4A, VGS = 10V
Drain-Source Diode Characteristics and Maximun Ratings VGS = 0V, IS = 2.5A 1.5
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e.Pulse width limited by safe operating area .
2
CEP04N7G/CEB04N7G CEF04N7G
6 9 VGS=10,8,7V 7.5 6 4.5 3 25 C 1.5 0 TJ=125C -55 C 4 5 6
ID, Drain Current (A)
4
3
2
VGS=4V
1
0 0.0
ID, Drain Current (A)
5
5
10
15
20
25
30
1
2
3
VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics
1200 1000 800 600 400 200 0 Coss Crss 0 5 10 15 20 25 Ciss 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100
VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics
ID=2A VGS=10V
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
C, Capacitance (pF)
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VDS=VGS
TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature
VGS=0V
10
1
VTH, Normalized Gate-Source Threshold Voltage
IS, Source-drain current (A)
ID=250µA
10
0
-25
0
25
50
75
100
125
150
10-1 0.4
0.7
1.0
1.3
1.7
2.0
TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature
VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current
3
CEP04N7G/CEB04N7G CEF04N7G
VGS, Gate to Source Voltage (V)
10 8 6 4 2 0 VDS=480V ID=4A 10
2
ID, Drain Current (A)
4
10
1
RDS(ON)Limit
1ms 10ms 100ms DC
10
0
0
3
6
9
12
15
10
-1
TC=25 C TJ=175 C Single Pulse 10
0
10
1
10
2
10
3
Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDD t on V IN VGS RGEN G RL D VOUT td(on) VOUT
10%
VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area
toff tr
90%
td(off)
90% 10%
tf
INVERTED
90%
S
VIN
50% 10%
50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
10
0
r(t),Normalized Effective Transient Thermal Impedance
D=0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2
10
-1
10
-2
Single Pulse
10
-3
1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2
-5
10
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve
4
很抱歉,暂时无法提供与“CEB04N7G”相匹配的价格&库存,您可以联系我们找货
免费人工找货