CED01N7

N-Channel Enhancement Mode Field Effect Transistor FEATURES 700V, 0.8A, RDS(ON) = 18 Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED01N7/CEU01N7 D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 700 Units V V A A W W/ C C ±30 0.8 3.0 31 0.25 -55 to 150 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 4 50 Units C/W C/W Details are subject to change without notice . 1 Rev 2. 2011.Jan http://www.cetsemi.com CED01N7/CEU01N7 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Notes : a.Drain current limited by maximum junction temperature. b.Repetitive Rating : Pulse width limited by maximum junction temperature. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. Tc = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 0.8A VDS = 480V,ID = 0.4A, VGS = 10V Test Condition VGS = 0V, ID = 250µA VDS = 700V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 0.5A 2 16 Min 700 1 10 -10 4 18 Typ Max Units V µA uA uA V Ω VDS = 25V, VGS = 0V, f = 1.0 MHz 135 45 20 19 13 24 35 6 1 4.4 0.8 1.5 38 26 48 70 7.8 pF pF pF ns ns ns ns nC nC nC A V VDD = 300V, ID = 0.4A, VGS = 10V, RGEN = 4.7Ω Drain-Source Diode Characteristics and Maximun Ratings 2 CED01N7/CEU01N7 1.2 1.0 0.8 0.6 0.4 0.2 0 0.0 VGS=10,8,7V 2.0 25 C 1.6 1.2 0.8 0.4 0.0 ID, Drain Current (A) ID, Drain Current (A) VGS=4V TJ=125 C -55 C 4 5 6 7 4 8 12 16 20 24 1 2 3 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 240 200 160 120 80 40 0 Ciss 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -100 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics ID=0.5A VGS=10V Coss Crss 0 5 10 15 20 25 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VDS=VGS TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature IS, Source-drain current (A) VGS=0V 10 0 VTH, Normalized Gate-Source Threshold Voltage ID=250µA 10 -1 -25 0 25 50 75 100 125 150 10 -2 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 3 CED01N7/CEU01N7 VGS, Gate to Source Voltage (V) 10 8 6 4 2 0 VDS=480V ID=0.4A 10 1 ID, Drain Current (A) RDS(ON)Limit 10 0 100ms 1ms 10ms DC 10 -1 0 1 2 3 4 5 6 10 -2 TC=25 C TJ=150 C Single Pulse 10 0 10 1 10 2 10 3 Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDD t on V IN VGS RGEN G RL D VOUT td(on) VOUT 10% VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area toff tr 90% td(off) 90% 10% tf INVERTED 90% S VIN 50% 10% 50% PULSE WIDTH Figure 9. Switching Test Circuit Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 0.2 10 -1 0.1 0.05 0.02 0.01 Single Pulse PDM t1 t2 10 -2 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 10 -2 10 -1 10 0 10 1 10 2 10 3 10 4 Square Wave Pulse Duration (msec) Figure 11. Normalized Thermal Transient Impedance Curve 4