N-Channel Enhancement Mode Field Effect Transistor FEATURES
Type CEP1165 CEB1165 CEF1165 VDSS 600V 600V 600V RDS(ON) 0.9Ω 0.9Ω 0.9Ω ID 10A 10A 10A e @VGS 10V 10V 10V
CEP1165/CEB1165 CEF1165
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
D
D
G
S CEB SERIES TO-263(DD-PAK)
G
G D S
G
CEP SERIES TO-220
D
S
CEF SERIES TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Limit Symbol TO-220/263 VDS VGS ID IDM PD TJ,Tstg
f
TO-220F
Units V V
600
±30
10 40 167 1.33 -55 to 150 10 40 50 0.4
e e
A A W W/ C C
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA 0.75 62.5 Limit 2.5 65 Units C/W C/W
Details are subject to change without notice . 1
Rev 1. 2006.Nov http://www.cetsemi.com
CEP1165/CEB1165 CEF1165
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage
b
Tc = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS g VSD VGS = 0V, IS = 10A g VDS = 480V, ID = 10A, VGS = 10V Test Condition VGS = 0V, ID = 250µA VDS = 600V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 5A 2 0.75 Min 600 10 100 -100 4 0.9 Typ Max Units V
µA
4
nA nA V Ω
VDS = 5V, ID = 10A VDS = 25V, VGS = 0V, f = 1.0 MHz
6 1780 170 25 18 8 37 7 30 9.2 7.8 10 1.5 36 16 64 14 38
S pF pF pF ns ns ns ns nC nC nC A V
VDD = 300V, ID = 10A, VGS = 10V, RGEN = 10Ω
Drain-Source Diode Characteristics and Maximun Ratings
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. e.Limited only by maximum temperature allowed . f .Pulse width limited by safe operating area . g.Full package IS(max) = 4.7A .
2
CEP1165/CEB1165 CEF1165
12 10 VGS=10,9,8,7V 8 6 4 2 0 VGS=6V 18 15 12 9 6 25 C 3 0 TJ=125C -55 C 4 5 6
ID, Drain Current (A)
VGS=5V
0
3
6
9
12
ID, Drain Current (A)
1
2
3
VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics
1800 1500 1200 900 600 300 0 Coss Crss 0 5 10 15 20 25 Ciss 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -100
VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics
ID=5A VGS=10V
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
C, Capacitance (pF)
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VDS=VGS
TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature IS, Source-drain current (A)
VGS=0V
10
1
VTH, Normalized Gate-Source Threshold Voltage
ID=250µA
10
0
-25
0
25
50
75
100
125
150
10
-1
0.4
0.8
1.2
1.6
2.0
TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature
VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current
3
CEP1165/CEB1165 CEF1165
VGS, Gate to Source Voltage (V)
10 8 6 4 2 0 VDS=480V ID=10A RDS(ON)Limit
ID, Drain Current (A)
100ms 10
1
4
1ms 10ms DC
10
0
0
8
16
24
32
10
-1
TC=25 C TJ=150 C Single Pulse 10
0
10
1
10
2
10
3
Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDD t on V IN VGS RGEN G RL D VOUT td(on) VOUT
10%
VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area
toff tr
90%
td(off)
90% 10%
tf
INVERTED
90%
S
VIN
50% 10%
50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
10
0
r(t),Normalized Effective Transient Thermal Impedance
D=0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2
10
-1
10
-2
Single Pulse
10
-3
1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2
-5
10
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve
4
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