CEF630N

N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP630N CEB630N CEF630N VDSS 200V 200V 200V RDS(ON) 0.36Ω 0.36Ω 0.36Ω ID 9A 9A 9A d @VGS 10V 10V 10V CEP630N/CEB630N CEF630N Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D D G G D S G CEP SERIES TO-220 S CEB SERIES TO-263(DD-PAK) G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Limit Symbol TO-220/263 VDS VGS ID IDM PD TJ,Tstg e TO-220F Units V V 200 ±20 9 36 78 0.63 -55 to 150 9 33 0.27 d d A A W W/ C C 36 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA 1.6 62.5 Limit 3.7 65 Units C/W C/W Details are subject to change without notice . 1 Rev 3. 2008.Oct. http://www.cetsemi.com Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b CEP630N/CEB630N CEF630N Tc = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) Test Condition VGS = 0V, ID = 250µA VDS = 160V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 5A 2 0.30 Min 200 25 100 -100 4 0.36 Typ Max Units V µA 4 nA nA V Ω gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS f VSD VDS = 10V, ID = 5A VDS = 25V, VGS = 0V, f = 1.0 MHz 4 930 130 25 24 15 116 25 19 3 5 9 48 30 232 50 24.7 S pF pF pF ns ns ns ns nC nC nC A V VDD = 100V, ID = 5A, VGS = 10V, RGEN = 50Ω VDS = 160V, ID = 5.9A, VGS = 10V Drain-Source Diode Characteristics and Maximun Ratings VGS = 0V, IS = 9A g 1.5 Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e.Pulse width limited by safe operating area . f.Full package IS(max) = 5.9A . g.Full package VSD test condition IS = 5.9A . 2 CEP630N/CEB630N CEF630N 12 10 8 6 4 2 VGS=10,9,8,7,6V 15 12.5 10 7.5 5 25 C ID, Drain Current (A) VGS=6V ID, Drain Current (A) VGS=4V 0 0 2 4 6 8 10 12 2.5 0 TJ=125C 0 1.5 3.0 4.5 -55 C 6.0 7.5 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 1800 1500 1200 900 600 300 0 Coss Crss 0 5 10 15 20 25 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -100 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics ID=5A VGS=10V Ciss RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VDS=VGS TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature VGS=0V 1 VTH, Normalized Gate-Source Threshold Voltage IS, Source-drain current (A) ID=250µA 10 10 0 -25 0 25 50 75 100 125 150 10 -1 0.4 0.7 1.0 1.3 1.6 1.9 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 3 CEP630N/CEB630N CEF630N VGS, Gate to Source Voltage (V) 10 8 6 4 2 0 VDS=160V ID=5.9A 10 2 RDS(ON)Limit 100ms ID, Drain Current (A) 10 1 10 0 1ms 10ms 100ms DC TC=25 C TJ=175 C Single Pulse 10 0 0 5 10 15 20 10 -1 10 1 10 2 10 3 Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDD t on V IN VGS RGEN G RL D VOUT td(on) VOUT 10% VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area toff tr 90% td(off) 90% 10% tf INVERTED 90% S VIN 50% 10% 50% PULSE WIDTH Figure 9. Switching Test Circuit Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 0.2 0.1 -1 10 PDM 0.05 0.02 0.01 t1 t2 10 -2 Single Pulse -5 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 10 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4