CET4301

CET4301 P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -6.3A, RDS(ON) = 44mΩ @VGS = -10V. RDS(ON) = 68mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-223 package. D D D G SOT-223 G S S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit -40 Units V V A A W C ±20 -6.3 -25 3 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 42 Units C/W Details are subject to change without notice . 1 Rev 1. 2006.Sep http://www.cetsemi.com CET4301 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-On Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = -1A VDS = -20V, ID = -5A, VGS = -10V VDD = -20V, ID = -5A, VGS = -10V, RGEN = 3Ω 11 4 39 12 20 3.2 4.2 -6 -1.3 22 8 68 24 26 ns ns ns ns nC nC nC A V d TA = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) Test Condition VGS = 0V, ID = -250µA VDS = -32V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = -250µA VGS = -10V, ID = -6A VGS = -4.5V, ID = -3A VDS = -5V, ID = -6A VDS = -20V, VGS = 0V, f = 1.0 MHz -1 36 52 5 1110 200 115 Min -40 -1 100 -100 -3 44 68 Typ Max Units V µA 5 nA nA V mΩ mΩ S pF pF pF Forward Transconductance gFS Ciss Coss Crss Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 2 CET4301 10 -VGS=10,6,5V 10 -ID, Drain Current (A) 8 -ID, Drain Current (A) 8 6 6 -VGS=3.0V 4 4 25 C 2 TJ=125 C -55 C 2 3 4 5 2 0 0 1 2 3 4 5 0 0 1 -VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 1500 1250 1000 750 500 250 0 0 5 10 Coss Crss 15 20 25 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 -VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics C, Capacitance (pF) Ciss RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) ID=-6.3A VGS=-10V -50 0 50 100 150 200 -VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature -IS, Source-drain current (A) VGS=0V 1 VTH, Normalized Gate-Source Threshold Voltage VDS=VGS ID=-250µA 10 10 0 10 -25 0 25 50 75 100 125 150 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature -VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 3 CET4301 -VGS, Gate to Source Voltage (V) 10 VDS=-20V ID=-5A 10 2 RDS(ON)Limit 8 -ID, Drain Current (A) 10 1 6 10 0 1ms 10ms 100ms 1s DC 5 4 2 10 -1 0 0 4 8 12 16 20 10 -2 TA=25 C TJ=150 C Single Pulse 10 -2 10 -1 10 0 10 1 10 2 Qg, Total Gate Charge (nC) Figure 7. Gate Charge -VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area VDD t on V IN D VGS RGEN G 90% toff tr 90% RL VOUT td(on) VOUT td(off) 90% 10% tf 10% INVERTED S VIN 50% 10% 50% PULSE WIDTH Figure 9. Switching Test Circuit Figure 10. Switching Waveforms 10 0 r(t),Normalized Effective Transient Thermal Impedance D=0.5 0.2 10 -1 0.1 0.05 0.02 PDM t1 t2 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2 10 -2 0.01 Single Pulse 10 -3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4