CMT2301GM233

CMT2301 P-CHANNEL ENHANCEMENT MODE MOSFET GENERAL DESCRIPTION The CMT2301 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. FEATURES -20V/-2.3A ,RDS(ON)=130 mΩ@VGS=-4.5V -20V/-1.9A ,RDS(ON)=190 mΩ@VGS=-2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3 package design APPLICATIONS Power Management in Notebook Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter PIN CONFIGURATION SOT-23-3 SYMBOL D Top View 3 G DRAIN SOURCE GATE S 1 2 P-Channel MOSFET ORDERING INFORMATION Part Number CMT2301M233 CMT2301GM233* *Note: G : Suffix for Pb Free Product Package SOT-23-3 SOT-23-3 2006/10/11 Rev1.2 Champion Microelectronic Corporation Page 1 CMT2301 P-CHANNEL ENHANCEMENT MODE MOSFET ABSOLUTE MAXIMUM RATINGS Rating Drain- to- Source Voltage Gate-to-Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current Continuous Source Current(Diode Conduction) Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient TA=25℃ TA=70℃ TA=25℃ TA=70℃ Symbol VDSS VGSS ID IDM IS PD TJ TSTG RθJA Value -20 ±8 -2.5 -1.5 -10 -1.6 1.25 0.8 150 -55/150 120 Unit V V A A A W ℃ ℃ ℃/W ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25℃. CMT2301 Characteristic Static Drain-Source Breakdown Voltage (VGS = 0 V, ID = -250μA) Gate Threshold Voltage (VDS = VGS, ID = -250μA) Gate Leakage Current (VDS =0 V, VGS = ±8 V) Zero Gate Voltage Drain Current (VDS = -20 V, VGS = 0 V) (VDS = -20 V, VGS = 0 V, TJ = 55℃) On-State Drain Current (VDS ≤ -5 V, VGS = -4.5V) ID(on) -6 -3 RDS(on) gFS VSD Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd 0.105 0.145 6.5 -0.8 415 223 87 13 36 42 34 5.8 0.85 1.7 25 60 70 60 10 nC ns pF -1.2 0.13 0.19 IDSS -1 -10 A μA V(BR)DSS VGS(th) IGSS -20 -0.45 -1.5 V V nA Symbol Min Typ Max Units ±100 (VDS ≤ -5 V, VGS = -2.5V) Drain-Source On-Resistance (VGS = -4.5 V, ID = -2.8A) (VGS = -2.5 V, ID = -2.0A) Forward Transconductance (VDS = -5 V, ID = -2.8V) Diode Forward Voltage (IS=-1.6A,VGS=0V) Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (VDS = -6 V, VGS =-0V, f = 1.0 MHz) (VDD = -6 V,RL=6Ω ID = -1.0 A,VGEN = -4.5 V, RG = 6Ω) (VDS = -6 V, ID = -2.8 A, VGS =-4.5V) Ω S V 2006/10/11 Rev1.2 Champion Microelectronic Corporation Page 2 CMT2301 P-CHANNEL ENHANCEMENT MODE MOSFET TYPICAL CHARACTERISTICS 2006/10/11 Rev1.2 Champion Microelectronic Corporation Page 3 CMT2301 P-CHANNEL ENHANCEMENT MODE MOSFET TYPICAL CHARACTERISTICS 2006/10/11 Rev1.2 Champion Microelectronic Corporation Page 4 CMT2301 P-CHANNEL ENHANCEMENT MODE MOSFET TYPICAL CHARACTERISTICS 2006/10/11 Rev1.2 Champion Microelectronic Corporation Page 5 CMT2301 P-CHANNEL ENHANCEMENT MODE MOSFET PACKAGE DIMENSION SOT-23-3 D 3 b1 c1 With Plating A c A1 A2 E1 b Base Metal Section B-B E b b1 c c1 D E 1 e e1 2 E1 b L L1 e e1 θ1 θ θ1 θ2 A2 A θ2 A1 See Section B-B 2006/10/11 Rev1.2 Champion Microelectronic Corporation θ L L1 Page 6 CMT2301 P-CHANNEL ENHANCEMENT MODE MOSFET IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. customer should provide adequate design and operating safeguards. Use of CMC products in such applications is understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the HsinChu Headquarter 5F, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan T E L : +886-3-567 9979 F A X : +886-3-567 9909 Sales & Marketing 7F-6, No.32, Sec. 1, Chenggong Rd., Nangang District, Taipei City 115, Taiwan T E L : +886-2-2788 0558 F A X : +886-2-2788 2985 2006/10/11 Rev1.2 Champion Microelectronic Corporation Page 7