2N7002ESEPT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor V OLTAGE 60 Volts CURRENT 5 00 m Ampere APPLICATION * Relay driver * High speed line driver * Logic level transistor 2 N7002ES E PT FEATURE * Small surface mounting type. (SOT-23) * High density cell design for low R DS(ON). * Suitable for high packing density. * Rugged and reliable. * High saturation current capability. * ESD protect in input gate 1.5KV (3) SC-70/SOT-323 (2) 1.3±0.1 0.3±0.1 0.65 2.0±0.2 0.65 CONSTRUCTION * N-Channel Enhancement with ESD protection in input 1.25±0.1 (1) 0.05~0.2 D 0.8~1.1 0~0.1 2.0~2.45 0.1Min. CIRCUIT 1G 3 S 2 TA = 25°C unless otherwise noted Dimensions in millimeters SC-70/SOT-323 Absolute Maximum Ratings Symbol Parameter 2N7002ESEPT Units VDSS Drain-Source Voltage 60 60 V V V VDGR VGSS Drain-Gate Voltage (RGS < 1 MΩ) Gate-Source Voltage - Continuous - Non Repetitive (tp < 50µs) ±20 ±40 500 800 400 -65 to 150 TA= 25°C TA= 100°C ID PD TJ,TSTG Maximum Drain Current - Continuous - Pulsed Maximum Power Dissipation mA mW °C Operating and Storage Temperature Range Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient 350 °C/W 2006-03 RATING CHARACTERISTIC CURVES ( 2N7002ESEPT ) Electrical Characteristics T Symbol Parameter A = 25°C unless otherwise noted Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate - Body Leakage, Forward Gate - Body Leakage, Reverse (Note 1) VGS = 0 V, ID = 10 µA VDS = 48 V, VGS = 0 V TJ =150°C VGS = 10 V, VDS = 0 V VGS = -15 V, VDS = 0 V 60 75 1.0 10 0.5 -0.5 V µA uA uA uA ON CHARACTERISTICS VGS(th) RDS(ON) gFS Gate Threshold Voltage VDS = VGS, ID = 1.0 mA VGS = 5.0 V, ID = 50 mA 1 2.5 4.5 5.0 V Static Drain-Source On-Resistance VGS = 10 V, ID = 500 mA Forward Transconductance VDS = 10 V DS(on), ID = 200 m A 100 300 Ω mS DYNAMIC CHARACTERISTICS Ciss Coss Crss ton toff Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time VDS = 10 V, VGS = 0 V, f = 1.0 MHz 13 8 4 3 9 40 30 10 10 15 pF VDD = 50 V, RL = 250 Ω, VGS = 10 V, RGEN = 50 Ω VDD = 50 V, RL = 250 Ω, VGS = 10 V, RGEN = 50 Ω nS nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS ISM VSD trr Qr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Recovery Charge VGS = 0 V, IS = 200 mA (Note 1) IS = 300 mA, dIS /dt=-100 A/uS VGS = 0 V, V DS = 25 V 0.85 30 30 300 1.2 1.5 mA A V nS nC Note: 1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.