2N7002M1PT

CHENMKO ENTERPRISE CO.,LTD 2 N7002M1PT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor V OLTAGE 60 Volts APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. CURRENT 0.115 Ampere FEATURE * Small surface mounting type. (FBPT-723) * High density cell design for low RDS(ON). * Suitable for high packing density. * Rugged and reliable. * High saturation current capability. * Voltage controlled small signal switch. 0.5±0.05 1.2±0.05 FBPT-723 1.2±0.05 CONSTRUCTION * N-Channel Enhancement 0.05±0.04 0.84±0.05 0.32±0.05 0.15(REF.) 0.47(REF.) (3) CIRCUIT (1) G D (3) 0.28±0.05 (2) (1) 0.23(REF.) 0.22±0.05 S (2) 0.25±0.05 Dimensions in millimeters FBPT-723 Absolute Maximum Ratings Symbol Parameter TA = 25°C unless otherwise noted 2N7002M1PT Units VDSS VGSS ID PD TJ,TSTG TSTG Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous Maximum Power Dissipation Operating Temperature Range Storage Temperature Range 60 V V mA mW °C °C ±20 115 150 150 -55 to 150 Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient 625 °C/W 2006-12 RATING CHARACTERISTIC CURVES ( 2N7002M1PT ) Electrical Characteristics T Symbol Parameter A = 25°C unless otherwise noted Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = 10 µA VDS = 60 V, VGS = 0 V TC=125°C VGS = 15 V, VDS = 0 V VGS = -15 V, VDS = 0 V 60 1 0.5 100 -100 V µA mA nA nA Gate - Body Leakage, Forward Gate - Body Leakage, Reverse ON CHARACTERISTICS (Note 1) VGS(th) RDS(ON) VDS(ON) ID(ON) gFS Gate Threshold Voltage VDS = VGS, ID = 250 µA VGS = 5.0 V, ID = 50 mA 1 1.2 1.7 2.5 7.5 7.5 3.75 0.375 V Static Drain-Source On-Resistance VGS = 10 V, ID = 500 mA Drain-Source On-Voltage VGS = 10 V, ID = 500mA VGS = 5.0 V, ID = 50 mA On-State Drain Current Forward Transconductance VGS = 10 V, VDS = 7.0VDS(on) VDS = 10 V DS(on), ID = 200 m A 500 80 Ω V mA mS DYNAMIC CHARACTERISTICS Ciss Coss Crss ton toff Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time VDS = 25 V, VGS = 0 V, f = 1.0 MHz 50 25 5 pF VDD = 25 V, RG = 25 Ω, ID = 500 mA VGS = 10 V, , RL = 50 Ω 20 nS 40 DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 200 mA (Note 1) 0.85 1.2 V Note: 1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. RATING CHARACTERISTIC CURVES ( 2N7002M1PT ) Typical Electrical Characteristics Figure 1. Output Characteristics 1.0 60 Figure 2. Capacitance Characteristics 0.8 VG S =1 0 , 7 , 6 , 5 , 4 V C,CAPACITANCE(pF) 50 I D , DRAIN CURRENT (A) 40 0.6 30 Ciss 20 Coss 10 Crss VG S =3 . 0 V 0.4 0.2 0 0 1.0 3.0 4.0 2.0 V DS , D RAIN-TO-SOURCE VOLTAGE (V) 5.0 0 0 15 20 10 5 VDS , DRAIN-TO-SOURCE VOLTAGE (V) 25 Figure 5. Gate Threshold Variation with Temperature 1.2 VDS=VGS ID=250uA 2.2 2.0 Figure 4. On-Resistance Variation with Temperature VGS=7V ID=10A Vth , NORMALIZED GATE-SOURCE DRAIN-SOURCE ON-RESISTANCE 1.1 THRESHOLD VOLTAGE R DS(on) , NO RMALIZED 1. 6 1.0 1. 2 0.9 0. 8 0.8 0. 7 -50 -25 0 25 50 75 100 TJ , JUN CTION T EMPERATURE (°C) 125 150 0.4 -50 -25 0 25 50 75 100 TJ , JUN CTION T EMPERATURE (°C) 125 150