2SC2412TPT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT General Purpose Transistor V OLTAGE 50 Volts APPLICATION * Small Signal Amplifier . 2 SC2412TPT CURRENT 0.15 Ampere FEATURE * Surface mount package. (SC-75/SOT-416) * Low saturation voltage V CE(sat)=-0.4V(max.)(I C=50mA) * Low cob. Cob=2.0pF(Typ.) * PC= 200mW (mounted on ceramic substrate). * High saturation current capability. 0.1 ( 2 ) 0.2±0.05 (E) SC-75/SOT-416 CONSTRUCTION * NPN Silicon Transistor * Epitaxial planner type (3) (C) 1.0±0.1 0.1 0.3±0.05 0.5 1.6±0.2 0.5 MARKING * HFE (Q):QA * HFE (R):RA * HFE (S):SA 0.15±0.05 0.1Min. C (3) 0.1 0.2±0.05 0.8±0.1 (1) CIRCUIT 1.6±0.2 (B) 0.7±0.1 0.55±0.1 0~0.1 (1) B E (2) Dimensions in millimeters SC-75/SOT-416 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current DC Peak Collector Current Peak Base Current Total Power Dissipation Storage Temperature Junction Temperature Operating Ambient Temperature TA ≤ 25OC; Note 1 CONDITION Open Emitter Open Base Open Collector SYMBOL VCBO VCEO VEBO IC ICM IBM PTOT TSTG TJ TAMB MIN. -55 -55 MAX. 60 50 7 150 150 15 200 +150 +150 +150 UNITS Volts Volts Volts mAmps mAmps mAmps mW o C C C o o Note 1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t. 2. Measured at Pulse Width 300 us, Duty Cycle 2%. 2004-9 RATING CHARACTERISTICS ( 2SC2412TPT ) ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) PARAMETERS Collector Cut-off Current Emitter Cut-off Current CONDITION IE=0; VCB=60V IC=0; VEB=7V VCE=6V; Note 1 IC=1mA; Note 2 SYMBOL ICBO ICEO MIN. TYPE MAX. 0.1 0.1 UNITS uA uA DC Current Gain hFE 120 - 560 Collector-Emitter Saturation Voltage Base-Emitter Saturatio Voltage Output Collector Capacitance Transition Frequency IC=50mA; IB=5mA IC=50mA; IB=5mA IE=ie=0; VCB=12V; f=1MHz IC=2mA; VCE=12V; f=100MHz VCEsat VBEsat Cob fT - 2 180 0.4 1.1 3.5 - Volts mVolts pF MHz Note : 1. Pulse test: tp ≤ 300uSec; δ ≤ 0.02. 2. hFE: Classification Q: 120 to 270, R: 180 to 390, S: 270 to 560 RATING CHARACTERISTIC CURVES ( 2SC2412TPT ) Fig.1 50 Grounded emitter propagation characteristics VCE=6V COLLECTOR CURRENT : IC (mA) Fig.2 100 Grounded emitter output characteristics (1) 0.50mA COLLECTOR CURRENT : IC (mA) Fig.3 10 Grounded emitter output characteristics (2) 30uA 27uA Ta=25OC COLLECTOR CURRENT : IC (mA) 20 10 5 Ta=100 OC 25 ΟC 55 OC 80 mA 0.45 A 0.40m 35mA 0. 0.30mA Ta=25OC 8 24uA 21uA 60 0.25mA 0.20mA 6 18uA 15uA 2 1 0.5 0.2 0.1 0 40 0.15mA 0.10mA 4 12uA 9uA 20 0.05mA IB=0A 0 0.4 0.8 1.2 1.6 2.0 2 6uA 3uA 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 BASE TO EMITTER VOLTAGE : VBE (V) 0 0 4 8 IB=0A 12 16 20 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) RATING CHARACTERISTIC CURVES ( 2SC2412TPT ) Fig.4 DC current gain vs. collector current (1) 500 Ta=25OC Fig.5 DC current gain vs. collector current (2) 500 Ta=100OC COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Fig. 6 Collector-emitter saturation voltage vs. collector current 0.5 VCE=5V Ta=25OC DC CURRENT GAIN : hFE 200 VCE=5V 3V 1V DC CURRENT GAIN : hFE 200 25OC -55OC 0.2 IC/IB=50 20 10 100 100 0.1 0.05 50 50 0.02 20 10 0.2 20 10 0.2 0.5 1 2 5 10 2 0 50 100 200 0.5 1 2 5 10 20 50 100 200 0.01 0.2 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current (1) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Fig.8 Collector-emitter saturation voltage vs. collector current (2) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Fig.9 Gain bandwidth product vs. emitter current TRANSITION FREQUENCY : fT (MHz) 0.5 IC/IB=10 0.5 IC/IB=50 500 Ta=25OC VCE=6V 0.2 Ta=100OC 25OC -55OC 0.2 0.1 0.05 Ta=100OC 25OC -55OC 0.1 0.05 200 0.02 100 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 0.01 0.2 0.5 1 2 5 10 20 50 100 200 50 0.5 1 2 5 10 20 50 100 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) Fig.10 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage BASE COLLECTOR TIME CONSTANT : Cc·rbb' (ps) Ta=25OC f=1MHz IE=0A IC=0A Fig.11 Base-collector time constant vs. emitter current COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 20 200 Ta=25OC f=32MHZ VCB=6V 10 Cib 100 5 50 2 Co b 20 1 0.2 0.5 1 2 5 10 20 50 10 0.2 0.5 1 2 5 10 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) EMITTER CURRENT : IE (mA)