2SC4774PT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT High frequency amplifier Transistor VOLTAGE 6 Volts APPLICATION * Small Signal Amplifier . 2 SC4774PT CURRENT 50 mAmpere FEATURE * Surface mount package. (SC-70/SOT-323) * Low saturation voltage VCE(sat)=0.3V(max.) * Low cob. Cob=1.0pF(Typ.) * PC= 200mW (mounted on ceramic substrate). * High saturation current capability. 1.3±0.1 (2) SC-70/SOT-323 (3) (1) CONSTRUCTION * NPN Silicon Transistor * Epitaxial planner type 0.3±0.1 0.65 2.0±0.2 0.65 1.25±0.1 MARKING * UW 0.05~0.2 0.1Min. 0.8~1.1 0~0.1 2.0~2.45 CIRCUIT (1) B C (3) E (2) Dimensions in millimeters SC-70/SOT-323 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current DC TA ≤ 25OC; Note 1 CONDITION Open Emitter Open Base Open Collector SYMBOL VCBO VCEO VEBO IC PTOT TSTG TJ TAMB MIN. -55 -55 MAX. 12 6 3 50 250 +150 +150 +150 UNITS Volts Volts Volts mAmps mW o Total Power Dissipation Storage Temperature Junction Temperature Operating Ambient Temperature C C C o o Note 1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t. 2. Measured at Pulse Width 300 us, Duty Cycle 2%. 2004-11 RATING CHARACTERISTICS ( 2SC4774PT ) ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) PARAMETERS Collector Cut-off Current CONDITION IE=0; VCB=10V SYMBOL ICBO MIN. TYPE MAX. 0.5 UNITS uA Emitter Cut-off Current IC=0; VEB=7V ICEO - - 0.5 uA DC Current Gain Collector-Emitter Saturation Voltage VCE/IC=5V/5mA IC=10mA; IB=1mA IB=3mA; VI=100mVrms f=500KHz IE=ie=0; VCB=10V; f=1MHz IC=-10mA; VCE=5V; f=200MHz hFE VCEsat Ron Cob fT 270 300 2 1 800 560 0.3 1.7 Volts Ω Output-on resistance Output Collector Capacitance Transition Frequency pF MHz - Note : 1. Pulse test: tp ≤ 300uSec; δ ≤ 0.02. RATING CHARACTERISTIC CURVES ( 2SC4774PT ) Electrical characteristic curves 10 COLLECTOR CURRENT : IC (mA) 125°C 8 25mA 1.0 mA 30mA COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) 40 0.2mA 40 6 20mA 15mA 30 0.1mA 30 4 10mA 20 20 2 5mA 10 IB=0mA 0.4 0.5 10 0 0 1 2 3 IB=0µA 4 5 0 0 0.1 0.2 0.3 0 0 0.4 0.8 −25°C 25°C Ta=25°C 35mA 50 Ta=25°C mA A 0.5 0.4m 0.3mA 50 VCE=5V 1.2 1.6 2.0 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter output Fig.2 Grounded emitter output Fig.3 Grounded emitter propagation characteristics ( ) characteristics ( ) characteristics RATING CHARACTERISTIC CURVES ( 2SC4774PT ) COLLECTER SATURATION VOLTAGE : VCE(sat) (mA) DC CURRENT TRANSFER RATIO : hFE 500 Ta=25°C VCE=5V GAIN BANDWIDTH PRODUCT : fT (MHz) 1000 1000 500 2000 Ta=25°C IC/IB=10 1000 500 Ta=25°C VCE=5V 200 100 50 200 100 50 20 10 200 100 50 20 10 0.1 0.2 5 0.1 0.2 0.5 1 2 5 10 20 50 0.5 1 2 5 10 20 50 20 0.1 0.2 0.5 1 2 5 10 20 50 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current Fig.5 Collector-emitter saturation Fig.6 Gain bandwidth product vs. voltage vs. collector current collector current 20 FEEDBACK CAPACITIANCE : Cre (pF) 10 5 OUTPUT CAPACITANCE : Cob (pF) Ta=25°C f=1MHz 20 10 5 Ta=25°C f=1MHz ON RESISTANE : Ron (Ω) 50 20 10 5 Ta=25°C f=500kHz υi=100mVrms RL=1kΩ 2 1 0.5 2 1 0.5 2 0.2 0.1 0.2 0.5 1 2 5 10 20 50 0.2 0.1 0.2 0.5 1 2 5 10 20 50 1 0.1 0.2 0.5 1 2 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) COLLECTOR TO BASE VOLTAGE : VCB (V) BASS CURRENT : IB (mA) Fig.7 Collector output capacitance Fig.8 Back capacitance voltage Fig.9 Output-on resistance vs. vs. voltage base current