CHDTC314TUPT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 30 Volts APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. C HDTC314TUPT CURRENT 600 mAmpere FEATURE * Small surface mounting type. (SC-70/SOT-323) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation(VCE(sat)=40mV at IC/IB=50mA/2.5mA). * High Collector current (IC(Max.)=600mA). * Internal isolated NPN transistors in one package. * Built in single resistor(R1=10kΩ, Typ. ) (2) SC-70/SOT-323 (3) 1.3±0.1 0.3±0.1 0.65 2.0±0.2 0.65 CONSTRUCTION * One NPN transistors and bias of thin-film resistors in one package. 1.25±0.1 (1) MARKING TUH Emitter Base 1 0.05~0.2 0.1Min. 0.8~1.1 0~0.1 2.0~2.45 CIRCUIT 2 TR R1 3 Collector Dimensions in millimeters SC-70/SOT-323 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC(Max.) PD TSTG TJ RθJ-S Note 1. Transistor mounted on an FR4 printed-circuit board. 2005-06 PARAMETER Coll ector -Base voltage Collector-Emitter voltage Emitter-Base voltage Coll ector current Power dissipation Storage temperature Junction temperature Thermal resistance , Note 1 CONDITIONS 30 15 5 600 Tamb ≤ 25 OC, Note 1 200 VALUE V V V UNIT mA mW O −55 ∼ +150 +150 junction - soldering point 140 C O C C/W O RATING CHARACTERISTIC ( CHDTC314TUPT ) CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R1 fT PARAMETER Collector-base breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage CONDITIONS IC=50uA IE=50uA VCB=20V VEB=4V IC/IB=50mA/2.5mA IC=50mA; VCE=5.0V IE=-50mA, VCE=10.0V f=100MHz MIN. 30 15 5.0 − − − 100 7 − − − − − − TYP. − − − MAX. V V V UNIT Collector-emitter breakdown voltage IC=1.0mA 0.5 0.5 0.08 600 13 − uA uA V KΩ MHz DC current gain Input resistor Transition frequency 0.04 250 10 200 Note 1.Pulse test: tp≤300uS; δ≤0.02. RATING CHARACTERISTIC CURVES ( CHDTC314TUPT ) Typical Electrical Characteristics COLLECsaturationTOR VOLTAGE : VCE(sat) (V) 1k 500 DC CURRENT GAIN : hFE Fig.1 DC current gain vs. collector current VCE = 5V Fig.2 Collector-emitter voltage vs. collector current 1 500m 200m 100m 50m 20m 10m 5m 2m 1m 1m 10m 100m 500m COLLECTOR CURRENT : IC (A) Ta=100OC 25OC -40 OC lO/lI=20 200 100 50 20 10 5 2 1 1m 10m 100m 500m COLLECTOR CURRENT : IC (A) Ta=100OC 25OC -40OC