CHEMB10PT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. C HEMB10PT CURRENT 100 mAmpere FEATURE * Small surface mounting type. (SOT-563) * High current gain. * Suitable for high packing density. * * * * Low colloector-emitter saturation. High saturation current capability. Two CHDTA123J chips in a package. Built in bias resistor(R1=2.2kΩ, Typ. ) SOT-563 (1) (5) 0.9~1.1 0.15~0.3 (3) (4) 0.50 0.50 1.5~1.7 MARKING * B0 1.1~1.3 0.5~0.6 0.09~0.18 6 R1 R2 4 CIRCUIT 1.5~1.7 R2 1 R1 3 Dimensions in millimeters SOT-563 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCC VIN IO DC Output current IC(Max.) PTOT TSTG TJ RθJ-S Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-07 PARAMETER Supply voltage Input voltage CONDITIONS − MIN. MAX. -50 +5 -100 V V UNIT -12 − − Tamb ≤ 25 OC, Note 1 − −55 − junction - soldering point − mA -100 150 +150 150 140 mW O Total power dissipation Storage temperature Junction temperature Thermal resistance C C C/W O O RATING CHARACTERISTIC ( CHEMB10PT ) CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL VIoff) VI(on) VO(on) II IC(off) hFE R1 R2/R1 fT PARAMETER Input off voltage Input on voltage Output voltage Input current Output current DC current gain Input resistor Resistor ratio Transition frequency IC=-5mA, VCE=-10.0V f=100MHz = CONDITIONS IO=-100uA; VCC=-5.0V IO=-5.0mA; VO=-0.3V IO=-5mA; II=-0.25mA VI=-5V VI=0V; VCC=-50V IO=-10mA; VO=-5.0V − − − − 80 1.54 17 − MIN. -0.5 − − -0.1 − − − 2.2 21 250 TYP. MAX. − -1.1 -0.3 -3.6 -0.5 − 2.86 26 − KΩ MHz V V V mA uA UNIT Note 1.Pulse test: tp≤300uS; δ≤0.02. RATING CHARACTERISTIC CURVES ( CHEMB10PT ) Typical Electrical Characteristics Fig.1 Input voltage vs. output current (ON characteristics) −100 VO=−0.3V Fig.2 Output current vs. input voltage (OFF characteristics) −10m −5m −2m −1m −500µ −200µ −100µ −50µ −20µ −10µ −5µ −2µ −1µ 0 Ta=100°C 25°C −40°C INPUT VOLTAGE : VI(on) (V) −20 −10 −5 −2 −1 −500m −200m −100m −100µ −200µ −500µ −1m −2m Ta=−40°C 25°C 100°C −5m −10m −20m −50m −100m OUTPUT CURRENT : Io (A) −50 VCC=−5V −0.5 −1.0 −1.5 −2.0 −2.5 −3.0 OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI(off) (V) Fig.3 DC current gain vs. output current 1k 500 Fig.4 Output voltage vs. output current −1 OUTPUT VOLTAGE : VO(on) (V) VO=−5V Ta=100°C 25°C −40°C −500m −200m −100m −50m −20m −10m −5m −2m −1m −100µ −200µ −500µ −1m −2m lO/lI=20 DC CURRENT GAIN : GI 200 100 50 20 10 5 2 Ta=100°C 25°C −40°C 1 −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m −5m −10m −20m −50m −100m OUTPUT CURRENT : IO (A) OUTPUT CURRENT : IO (A)