CHP69PT

CHENMKO ENTERPRISE CO.,LTD SMALL FLAT PNP Medium Power Transistor V OLTAGE 20 Volts APPLICATION * General purpose switching and amplification * Audio power amplifier C HP69PT CURRENT 1 Ampere FEATURE * Small flat package. ( SC-73/SOT-223 ) * Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-1A) * High speed switching time: tstg= 1.0uSec (typ.) * PC= 1.35W (mounted on printed-circuit board). * High saturation current capability. 6.50+0.20 3.00+0.10 SC-73/SOT-223 1.65+0.15 0.90+0.05 2.0+0.3 3.5+0.2 7.0+0.3 0.9+0.2 CONSTRUCTION * PNP Switching Transistor 0.70+0.10 0.70+0.10 2.30+0.1 2.0+0.3 0.70+0.10 4.60+0.1 0.27+0.05 0.01~0.10 1 1 Base 2 3 CIRCUIT 2 Collector ( Heat Sink ) 3 Emitter 1 B 2 C 3 E Dimensions in millimeters SC-73/SOT-223 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current DC Peak Collector Current Peak Base Current Total Power Dissipation Storage Temperature Junction Temperature Operating Ambient Temperature TA ≤ 25OC; Note 1 CONDITION Open Emitter Open Base Open Collector SYMBOL VCBO VCEO VEBO IC ICM IBM PTOT TSTG TJ TAMB MIN. -65 -65 MAX. -32 -20 -5 -1 -2 -0.2 1.35 +150 +150 +150 UNITS Volts Volts Volts Amps Amps Amps W o C C C o o Note 1. Transistor mounted on printed-circuit board, Mounting pad for collector 10 mm2.. 2. Measured at Pulse Width 300 us, Duty Cycle 2%. 2003-5 RATING CHARACTERISTIC CURVES ( CHP69PT ) THERMAL CHARACTERISTICS PARAMETERS Thermal Resistance 1 Thermal Resistance 2 CONDITION Note 1 Note 1 SYMBOL RθJ-A RθJ-S MIN. TYPE 90 10 MAX. UNITS O C/W C/W O Note : 1. Transistor mounted on printed-circuit board, Mounting pad for collector 10 mm2.. CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) PARAMETERS Collector Cut-off Current Emitter Cut-off Current CONDITION IE=0; VCB=-25V IE=0; VCB=-25V; TJ=150OC IC=0; VEB=-5V IC=-5mA; VCE=-10V IC=-500mA; VCE=-1.0V IC=-1.0A; VCE=-1.0V SYMBOL ICBO ICEO MIN. 50 85 60 TYPE MAX. -100 -10 -100 375 UNITS nA uA nA DC Current Gain hFE DC Current Gain CHP69-16 CHP69-25 IC=-500mA; VCE=-1.0V hFE 100 160 - 250 375 DC Current Gain CHP69-16/IN IC=-10mA; VCE=-1.8V hFE 140 -620 48 - 230 Collector-Emitter Saturation Voltage IC=-1.0A; IB=-100mA IC=-5mA; VCE=-10V IC=-1.0A; VCE=-1.0V IE=ie=0; VCB=-5.0V; f=1MHz IC=-10mA; VCE=-5V; f=100MHz IICI=0.5A; IVCEI=1.0V VCEsat 40 - -500 -1.0 1.6 mVolts mVolts Volts pF MHz Base-Emitter Saturatio Voltage VBEsat Collector Capacitance Transition Frequency DC Current Gain Ratio of The Complementary pairs Note : 1. Pulse test: tp ≤ 300uSec; δ ≤ 0.02. CC fT hFE1 / hFE2 RATING CHARACTERISTIC CURVES ( CHP69PT ) Typical Electrical Characteristics Figure 1. Typical DC Current Gain 400 VCE=-1.0V DC CURRENT GAIN hFE 300 200 100 0 -0.1 -1.0 -10 -100 -1000 -10000 COLLECTOR CURRENT Ic (mA) Figure 2. Typical DC Current Gain 400 VCE=-1.8V DC CURRENT GAIN hFE 300 TA=150 C O 200 25OC 100 -40OC 0 -0.1 -1.0 -10 -100 -1000 -10000 COLLECTOR CURRENT Ic (mA)