CHT100PT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor V OLTAGE 30 Volts APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. C HT100PT CURRENT 1.1 Ampere FEATURE * Small surface mounting type. (SC-59/SOT-346) * High density cell design for low R DS(ON). * Suitable for high packing density. * Rugged and reliable. * High saturation current capability. * Voltage controlled small signal switch. (2) (3) SC-59/SOT-346 0.95 2.7~3.1 0.95 (1) 1.7~2.1 0.3~0.51 CONSTRUCTION * N-Channel Enhancement 1.2~1.9 MARKING * T100 D 0.89~1.3 0.085~0.2 0.3~0.6 2.1~2.95 0~0.1 CIRCUIT 1G S 3 2 TA = 25°C unless otherwise noted Dimensions in m illimeters SC-59/SOT-346 Absolute Maximum Ratings Symbol Parameter CHT100PT Units VDSS Drain-Source Voltage 30 V VGSS ID Gate-Source Voltage - Continuous ±20 ±1.1 ± 4.4 500 -55 to 150 V Maximum Drain Current - Continuous - Pulsed A A mW °C PD TJ,TSTG Maximum Power Dissipation Operating and Storage Temperature Range Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient 250 K/W 2004-03 RATING CHARACTERISTIC CURVES ( CHT100PT ) Electrical Characteristics T Symbol Parameter A = 25°C unless otherwise noted Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 µA VDS = 24 V, VGS = 0 V TC=125°C VGS = 12 V, VDS = 0 V VGS = -12 V, VDS = 0 V 30 1 10 100 -100 V µA µA nA nA Gate - Body Leakage, Forward Gate - Body Leakage, Reverse ON CHARACTERISTICS (Note 1) VGS(th) RDS(ON) Gate Threshold Voltage VDS = 10V, ID = 1.0 µA 1 3.0 0.17 0.24 V Static Drain-Source On-Resistance VGS = 4.5 V, ID = 0.5 A VGS = 10 V, ID = 1.0 A Ω S gFS Forward Transconductance VDS = 10 V , ID = 500 m A 1.3 2.4 DYNAMIC CHARACTERISTICS Qg Qgs Qgd Ciss Coss Crss ton tr toff tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time VDS = 24 V, VGS = 10 V, I D = 1.0 A 5.5 0.8 1.3 nC VDS = 10 V, VGS = 0 V, f = 1.0 MHz 150 90 30 pF VDD = 10 V ID = 500 mA, VGS = 5.0 V, RGEN = 50 Ω VDD = 10 V ID = 500 mA, VGS = 5.0 V, RGEN = 50 Ω 10 15 25 45 nS Turn-Off Time nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS ISM VSD Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IF = 1.0 A 540 4.0 1.2 mA A V RATING CHARACTERISTIC CURVES ( CHT100PT ) Typical Electrical Characteristics Figure 1. On-Region Characteristics 4.0 Figure 2. On-Resistance Variation with Temperature 3.0 I D , DRAIN-SOURCE CURRENT (A) 3.0 DRAIN-SOURCE ON-RESISTANCE R DS(ON) , NORMALIZED VGS = 10V 5.0V 4.5V 4.0V 3.5V 2.0 2.0 V GS = 4.5V I D = 500 m A 3.0V 1.0 V GS = 10V I D = 1000 m A 1.0 2.5V 0 0 1 2 3 4 5 V DS , D RAIN-SOURCE VOLTAGE (V) 0 -5 0 -2 5 0 25 50 75 100 T J , JUN CTION T EMPERATURE (°C) 125 150