CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT PNP SILICON Transistor
V OLTAGE 100 Volts
APPLICATION
* Telephony and proferssional communction equipment. * Other switching applications.
C HT127ZPT
CURRENT 5 Ampere
FEATURE
* Small flat package. ( SC-73/SOT-223 ) * Suitable for high packing density. * High saturation current capability.
6.50+0.20 3.00+0.10
SC-73/SOT-223
1.65+0.15 0.90+0.05 2.0+0.3
CONSTRUCTION
* PNP SILICON Transistor
0.70+0.10
3.5+0.2
7.0+0.3
0.9+0.2
2.0+0.3
MARKING
* ZBP
0.70+0.10 2.30+0.1
0.70+0.10 4.60+0.1
0.27+0.05 0.01~0.10
1 1 Base
3
2
CIRCUIT
(1) B
C (3)
2 Emitter 3 Collector ( Heat Sink )
E (2)
Dimensions in millimeters
SC-73/SOT-223
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board.
2004-7
PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) Peak Collector Current total power dissipation storage temperature junction temperature operating ambient temperature
CONDITIONS open emitter open base open collector − − − − − Tamb ≤ 25 °C; note 1 −
MIN.
MAX. -100 -100 -5.0 -5.0 -8.0 2 +150 150 +150
UNIT V V V A A W °C °C °C
−65 − −65
RATING CHARACTERISTIC CURVES ( CHT127ZPT )
CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL ICEO ICBO IEBO hFE PARAMETER collector cut-off current collector cut-off current emitter cut-off current DC current gain CONDITIONS VCE = -50 V VCB = -100 V VEB=-5.0V IC = -500 mA; VCE = -3V IC = -3.0A; VCE = -3V − − − 1000 1000 MIN. MAX. -500 -200 -2.0 − − UNIT uA uA mA
VCEsat
collector-emitter saturation voltage
IC = -3 .0 A; IB =-12m A IC = -5.0 A; IB = -20 m A
− − −
-2.0 -4.0 -2.5 300 −
V V V pF MHz
VBEON Cob fT
base-emitter saturation voltage IC = -3.0 A; VCE=-3.0V collector capacitance transition frequency
IE = ie = 0; VCB = - 1 0 V; f = 1 MHz − IC = -3.0A; VCE = - 4 V; f = 1.0 MHz 4.0
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