CHUMD6PT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. C HUMD6PT CURRENT 100 mAmpere FEATURE * Small surface mounting type. (SC-88/SOT-363) * High current gain. * Suitable for high packing density. * * * * Low colloector-emitter saturation. High saturation current capability. Both the CHDTA143T & CHDTC143T in one package. Built in bias resistor(R1=4.7kΩ, Typ. ) SC-88/SOT-363 (1) (6) 1.2~1.4 0.65 0.65 2.0~2.2 (4) 0.15~0.35 (3) 1.15~1.35 0.08~0.15 0.1 Min. 0.8~1.1 0~0.1 2.15~2.45 CIRCUIT 6 R1 4 R1 1 3 Dimensions in millimeters SC-88/SOT-363 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC(Max.) PD TSTG TJ RθJ-S Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-01 PARAMETER Coll ector -Base voltage Collector-Emitter voltage Emitter-Base voltage Coll ector current Power dissipation Storage temperature Junction temperature Thermal resistance , Note 1 CONDITIONS 50 50 5 100 Tamb ≤ 25 OC, Note 1 150 VALUE V V V UNIT mA mW O −55 ∼ +150 −55 ∼ +150 junction - soldering point 140 C O C C/W O RATING CHARACTERISTIC ( CHUMD6PT ) CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. SYMBOL BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R1 fT PARAMETER Collector-base breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage CONDITIONS IC=50uA IE=50uA VCB=50V VEB=4V IC/IB=5mA/0.25mA IC=1mA; VCE=5.0V IC=5mA, VCE=10.0V f=100MHz MIN. 50 50 5.0 − − − 100 3.29 − − − − − − − TYP. − − − MAX. V V V UNIT Collector-emitter breakdown voltage IC=1.0mA 0.5 0.5 0.3 600 6.11 − uA uA V KΩ MHz DC current gain Input resistor Transition frequency 250 4.7 250 Note 1.Pulse test: tp≤300uS; δ≤0.02. RATING CHARACTERISTIC CURVES ( CHUMD6PT ) CHDTA143T Typical Electrical Characteristics COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Fig.1 DC current gain vs. collector current 1k 500 DC CURRENT GAIN : hFE Fig.2 Collector-emitter saturation voltage vs. collector current -1 lC/lB=20 -500m -200m -100m -50m -20m -10m -5m -2m -1m -100u -500u -1m -5m -10m -50m -100m 100OC 25OC -40 OC VCE=-5V 200 100 50 20 10 5 2 1 -100u −1m -5m -10m -50m -100m Ta=100OC 25OC -40OC COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) CHDTC143T Typical Electrical Characteristics Fig.1 DC current gain vs. collector current VCE = 5V COLLECsaturationTOR VOLTAGE : VCE(sat) (V) 1k 500 DC CURRENT GAIN : hFE Fig.2 Collector-emitter voltage vs. collector current 1 500m 200m 100m 50m 20m 10m 5m 2m 1m 100u 1m 2m 5m 10m 20m 50m 100m Ta=100OC 25OC -40 OC lO/lI=20 200 100 50 20 10 5 2 1 100u 1m 2m 5m 10m 20m 50m100m Ta=100OC 25OC -40OC COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (uA)