LL4448PT

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT SWITCHING DIODE VOLTAGE 75 Volts CURRENT 150 mAmpere APPLICATION * Ultra high speed switching L L4448PT FEATURE * Small surface mounting type. (MINI-MELF) * High speed. (TRR=4.0nSec Typ.) * Suitable for high packing density. * Maximum total power disspation is 300mW. * Peak forward current is 500mA. Mini-Melf CONSTRUCTION 0.4 CATHODE BAND 0.4 * Silicon epitaxial planar 1.4±0.1 (1) +0.2 3.4 0.1 (2) 1.5Max. CIRCUIT (2) (1) MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Maximum Non-Repetitive Peak Reverse Voltage Maximum Repetitive Peak Reverse Voltage Maximum Working Peak Reverse Voltage Maximum DC Blocking Voltage Maximum RMS Voltage Maximum Average Forward Rectified Current Repetitive Peak Forward Current Peak Forward Surge Current at 1uSec. Typical Junction Capacitance between Terminal (Note 1) Maximum Reverse Recovery Time (Note 2) Maximum Thermal Resistance Maximum Operating and Storage Temperaturd Range o Dimensions in millimeters Mini-Melf SYMBOL VRM VRRM VRWM VDC VRMS IO IFRM @1Sec @1.0uSec IFSM CJ trr R JA LL4448PT 100 75 53 150 500 1.0 2.0 4.0 4.0 350 -65 to +175 UNITS Volts Volts Volts mAmps mAmps Amps pF nSec o C/W o TJ,TSTG C ELECTRICAL CHARACTERISTICS ( At TA = 25 C unless otherwise noted ) CHARACTERISTICS Maximum Instantaneous Forward Voltage Maximum Average Reverse Current @ IF= 5.0 mA @ IF= 100 mA VR= 20V @TJ=25oC VR= 75V @TJ=25oC VR= 20V @TJ=150oC SYMBOL VF IR LL4448PT 0.72 1.0 25nA 5.0 50 UNITS Volts uAmps 2003-11 NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 0 volts. 2. Measured at applied froward current of 10 mA, reverse current of 1.0 mA, Reverse voltage of 6.0 volts and RL= 100 ohms. 3. ESD sensitive product handling required. RATING CHARACTERISTIC CURVES ( LL4448PT ) FIG. 1 - FORWARD CHARACTERISTICS 1 FORWARD CURRENT, (A) 100m 10m 1m 100u 10u 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 FORWARD VOLTAGE, (V) o Ta=125oC 7 5o C 25oC -25 C FIG. 2 - REVERSE CHARACTERISTICS 1m REVERSE CURRENT, (A) 0.1m 10u 1u 100n 25oC Ta=125oC 75oC 10n 1n 0 20 40 60 80 100 120 REVERSE VOLTAGE, (V) FIG. 3 - TYPICAL JUNCTION CAPACITANCE REVERSE RECOVERY TIME, (nS) 10 JUNCTION CAPACITANCE, (pF) 5 2 1 0.5 0.2 0.1 0 2 4 6 8 10 12 14 REVERSE VOLTAGE, (V) 6 FIG. 4 - REVERSE RECOVERY TIME CHARATERISTICS IR=1mA VR=6V IRR=1/10IR 4 2 0 0 10 20 30 FORWARD CURRENT, (mA) PEAK FORWARD SURGE CURRENT, (A) 10.0 5.0 2.0 1.0 0.5 0.2 0.1 0.1 FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PULSE Single pulse FIG. 6 - REVERSE RECOVERY TIME MEASUREMENT CIRCUIT 0.01µF D.U.T. 5 PULSE GENERATOR OUTPUT 50 100 SAMPLING OSCILLOSCOPE 1 10 100 1000 10000 PULSE WIDTH, (Sec)