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MBR10150CT
Features
• • • High Junction Temperature Capability Good Trade Off Between Leakage Current And Forward Volage Drop Low Leakage Current
10 Amp High Voltage
Power Schottky
Barrier Rectifier 150Volts TO-220AB
B C K
PIN
• • • •
Maximum Ratings
Operating J unction Temperature : 150 °C Storage Temperature: - 50°C to +150°C P er d iode Thermal Resistance 4°C/W Junction to Case Total Thermal Resistance 2.4°C/W Junction to Case Catalog Number MBR 10150 CT Maximum Recurrent Peak Reverse Voltage 150 V Maximum RMS Voltage 105V Maximum DC Blocking Voltage 150 V
L M D A E
F G I J N HH
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward Current Peak Forward Surge Current Maximum Instantaneous Forward Voltage MBR10150CT IF(AV) IFSM 10 A 120A TC = 155 °C 8.3ms half sine
A B C D E F G H I J K L M N
PIN 1 PIN 3
PIN 2 CASE
MM 14.22 9.65 2.54 5.84 9.65 -----12.70 2.29 0.51 0.30 3.53 3.56 1.14 2.03 15.88 10.67 3.43 6.86 10.67 6.35 14.73 2.79 1.14 0.64 4.09 4.83 1.40 2.92
VF VF
.92V .75V
IFM = 5A TJ = 25 °C I FM = 5A TJ = 125°C
Maximum Reverse Current At Rated DC Blocking Voltage
IR
50 µ A 7m A
TJ = 25°C TJ = 125°C
INCHES .560 .625 .380 .420 .100 .135 .230 .270 .380 .420 -----.250 .500 .580 .090 .110 .020 .045 .012 .025 .139 .161 .140 .190 .045 .055 .080 .115
* Pulse Test: Pulse Width380µsec, Duty Cycle 2%
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MBR10150CT
Fig. 1: Average forward power dissipation versus average forward current (per diode).
PF(av)(W) 5.0 δ = 0.2 δ = 0.5 δ = 0.1 4.5 4.0 δ = 0.05 3.5 δ=1 3.0 2.5 2.0 1.5 T 1.0 0.5 IF(av) (A) tp δ=tp/T 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Fig. 2: Average forward current versus ambient temperature (δ = 0.5, per diode).
IF(av)(A) 6
Rth(j-a)=Rth(j-c)
5 4 3 2 1 0
δ=tp/T
tp T
Rth(j-a)=15°C/W
Tamb(°C) 50 75 100 125 150 175
0
25
Fig. 3: Non repetitive surge peak forward current versus overload duration (maximum values, per diode).
IM(A) 80 70 60 50 40 30 20 10 0 1E-3
IM t
Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration (per diode).
Zth(j-c)/Rth(j-c) 1.0 0.8
Tc=50°C
0.6 0.4 0.2
δ = 0.5
Tc=75°C
δ = 0.2 δ = 0.1
Tc=125°C
T
δ=0.5
t(s) 1E-2 1E-1 1E+0
Single pulse
tp(s) 1E-2 1E-1
0.0 1E-3
δ=tp/T
tp
1E+0
Fig. 5: Reverse leakage current versus reverse voltage applied (typical values, per diode)
IR(µA) 1E+5 1E+4 1E+3 1E+2 1E+1 1E+0 1E-1 1E-2 VR(V) 0 25 50 75 100 125 150
Tj=75°C Tj=175°C Tj=150°C Tj=125°C
Fig. 6: Junction capacitance versus reverse voltage applied (typical values, per diode).
C(pF) 200 100 50
F=1MHz Tj=25°C
Tj=25°C
20 VR(V) 10 1 2 5 10 20 50 100 200
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MBR10150CT
Fig. 7: Forward voltage drop versus forward current (maximum values, per diode).
Fig. 8: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board, copper thickness: 35µm) (STPS10150CG only).
Rth(j-a) (°C/W) 80
IFM(A) 100.0
Tj=125°C Typical values
70 60 50
Tj=25°C
10.0
Tj=125°C
40 30 20 10 0 0 2 4 6 8
1.0 VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
S(cm²) 10 12 14 16 18 20
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Marking
1. Marking on the semiconductor ( laser marking or UV ink marking )
Logo
MBR10150CT
Type Name
Terminal sign
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