MBR1030CT

Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • • • Metal of siliconrectifier, majonty carrier conducton Guard ring for transient protection Low power loss high efficiency High surge capacity, High current capability MBR1030CT THRU MBR1060CT 10 Amp Schottky Barrier Rectifier 30-60 Volts TO-220AB Maximum Ratings • • Device Marking Operating Temperature: -55 °C to +150°C Storage Temperature: -55°C to +175°C : Maximum Recurrent Peak Reverse Voltage 30V 35V 40V 45V 50V 60V Maximum RMS Voltage 21V 24.5V 28V 31.5V 35V 42V Maximum DC Blocking Voltage 30V 35V 40V 45V 50V 60V Catalog Number MBR1030CT MBR1035CT MBR1040CT MBR1045CT MBR1050CT MBR1060CT B C K PIN L M D A E MBR1030CT MBR1035CT MBR1040CT MBR1045CT MBR1050CT MBR1060CT F G I J N HH Electrical Characteristics @ 25°C Unless Otherwise Specified Average Forward Current Peak Forward Surge Current Maximum Forward Voltage Drop Per Element MBR1030CT-45CT MBR1050CT-60CT MBR1030CT-45CT MBR1050CT-60CT Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Junction Capacitance MBR1030CT-45CT MBR1050CT-60CT IF(AV) IFSM 10A 125A TC = 105°C PIN 1 8.3ms, half sine PIN 3 PIN 2 CASE 
 MM  14.22 9.65 2.54 5.84 9.65 -----12.70 2.29 0.51 0.30 3.53 3.56 1.14 2.03  15.88 10.67 3.43 6.86 10.67 6.35 14.73 2.79 1.14 0.64 4.09 4.83 1.40 2.92   VF .70V .80V .57V .65V 0.1mA 15mA IFM = 5A TJ = 25°C IFM = 5A TJ = 125°C TJ = 25°C T J = 125°C IR
 A B C D E F G H I J K L M N INCHES   .560 .625 .380 .420 .100 .135 .230 .270 .380 .420 -----.250 .500 .580 .090 .110 .020 .045 .012 .025 .139 .161 .140 .190 .045 .055 .080 .115 CJ 170pF 220pF Measured at 1.0MHz, VR=4.0V *Pulse test: Pulse width 300 µsec, Duty cycle 2% www cnelectr.com . RATING AND CHARACTERISTIC CURVES MBR1030CT thru MBR1060CT PEAK FORWARD SURGE CURRENT, AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT AMPERES 16 FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT 150 125 100 75 50 25 0 1 2 5 10 20 50 100 12 8 4 RESISTIVE OR INDUCTIVE LOAD 8.3ms Single Half-Sine-Wave (JEDEC METHOD) 0 25 50 75 100 125 150 175 CASE TEMPERATURE , C NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL REVERSE CHARACTERISTICS 100 FIG.4 - TYPICAL FORWARD CHARACTERISTICS 100 INSTANTANEOUS FORWARD CURRENT ,(A) INSTANTANEOUS REVERSE CURRENT ,(mA) 10 TJ = 125 C MBR1030CT ~ MBR1045CT 10 1.0 MBR1050CT ~ MBR1060CT 0.1 1.0 0.01 TJ = 25 C TJ = 25 C PULSE WIDTH 300us 2% Duty cycle 0.001 0 20 40 60 80 100 120 140 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%) INSTANTANEOUS INSTANTANEOUS FORWARD VOLTAGE , VOLTS FIG.5 - TYPICAL JUNCTION CAPACITANCE 1000 MBR1030CT ~ MBR1045CT CAPACITANCE , (pF) 100 MBR1050CT ~ MBR1060CT TJ = 25 C, f= 1MHz 10 0.1 1 4 10 100 REVERSE VOLTAGE , VOLTS www.cnelectr.com