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SD103A THRU SD103C
Small Signal Schottky Diodes
Features
l l l Low Reverse Recovery Time Low Reverse Capacitance Low Forward Voltage Drop
l Guard Ring Construction for Transient Protection
Mechanical Data
l Case: DO-35, Glass l Terminals: Solderable per MIL-STD-202, Method 208 l Polarity: Indicated by Cathode Band
DO-35
Maximum Ratings @ 25oC Unless Otherwise Specified
D
Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Maximum sigle cycle surge 60Hz sine wave Power Dissipation(Note 1) Thermal Resistance, Junction to Ambient Junction Tmperature Operation/Storage Temp. Range
Symbol VRRM VRWM VR VR(RMS) IFSM Pd R Tj TSTG
SD103A
SD103B
SD103C
40V
30V
20V
A Cathode Mark
28V
21V 15A 400mW 300K/W 125 C -55 to +150 C
o o
14V
B
D
C
Electrical Characteristics @ 25oC Unless Otherwise Specified
C harateristic SD103A Leakage Current SD103B SD103C VF M ----IR ----Symbol T ype Max
5.0uA 5.0uA 5.0uA 0.37V 0 .60V
Test Condition VR =30V VR =20V VR =10V IF =20mA IF =200mA VR =0V, f=1.0MHz IF =IR =50mA, recover to 200mA/0.1IR
DIM A B C D INCHES MIN ------1.000
DIMENSIONS MM MIN ------25.40
MAX .166 .079 .020 ---
MAX 4.2 2.00 .52 ---
NOTE
Maximum Forward Voltage Drop Junction Capacitance Reverse Recovery Time
Cj t rr
50pF 10ns
---------
Note: 1. Valid provided that electrodes are kept at ambient temperature
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SD103A thru SD103C
Figure 1. Typical variation of forward current vs. Forward. Voltage for primary conduction through the schottky barrier
IF(mA)
Figure 2. Typical high current forward conduction curve tp=300ms,duty cycle=2%
A
Tj= 25 C
IF
IF
VF Figure 3. Typical non repetitive forward surge current versus pulse width
VF
A
mA
IF
IF
ms
tp
VR
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SD103A thru SD103C
Figure 5. Blocking deration versus temperature at various average forward currents
V
VR
TA
Figure 6. Typical capacitance versus reverse voltage
pF
Ctot
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