CHONGQING PINGYANG ELECTRONICS CO.,LTD.
1A1 THRU 1A7
TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER
VOLTAGE:50-1000V CURRENT:1.0A
FEATURES
·High reliability ·Low leakage ·Low forward voltage drop ·High current capability
R-1
.025(0.65) DIA. .021(0.55)
.787(20.0) MIN. .138(3.5) .114(2.9)
MECHANICAL DATA
·Case: Molded plastic ·Epoxy: UL94V-0 rate flame retardant ·Lead: MIL-STD- 202E, Method 208 guaranteed ·Polarity:Color band denotes cathode end ·Mounting position: Any ·Weight: 0.19 grams
.787(20.0) MIN.
.102(2.6) DIA. .087(2.2)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60Hz,resistive or inductive load. For capacitive load, derate current by 20%.
SYMBOL
1A1
1A2
1A3 200 140 200
1A4
1A5
1A6 800 560 800
1A7 units 1000 700 1000 V V V A
Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward rectified Current at TA=25°C Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rate load (JEDEC method) Maximum Instantaneous forward Voltage at 1.0A DC @ TA=25°C Maximum DC Reverse Current at Rated DC Blocking Voltage @ TA=100°C Maximum Full Load Reverse Current Average Full Cycle .375”(9.5mm) lead length at TL=75°C Typical Junction Capacitance (Note) Typical Thermal Resistance Notes:
VRRM VRMS VDC Io
50 35 50
100 70 100
400 280 400 1.0
600 420 600
IFSM VF
25 1.1 5.0
A V
IR
500 30
µA
CJ RθJA
15 60
pF
°C/W
Measured at 1MHz and applied reverse voltage of 4.0 volts
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