1A3

CHONGQING PINGYANG ELECTRONICS CO.,LTD. 1A1 THRU 1A7 TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER VOLTAGE：50-1000V CURRENT：1.0A FEATURES ·High reliability ·Low leakage ·Low forward voltage drop ·High current capability R-1 .025(0.65) DIA. .021(0.55) .787(20.0) MIN. .138(3.5) .114(2.9) MECHANICAL DATA ·Case: Molded plastic ·Epoxy: UL94V-0 rate flame retardant ·Lead: MIL-STD- 202E, Method 208 guaranteed ·Polarity:Color band denotes cathode end ·Mounting position: Any ·Weight: 0.19 grams .787(20.0) MIN. .102(2.6) DIA. .087(2.2) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60Hz,resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL 1A1 1A2 1A3 200 140 200 1A4 1A5 1A6 800 560 800 1A7 units 1000 700 1000 V V V A Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward rectified Current at TA=25°C Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rate load (JEDEC method) Maximum Instantaneous forward Voltage at 1.0A DC @ TA=25°C Maximum DC Reverse Current at Rated DC Blocking Voltage @ TA=100°C Maximum Full Load Reverse Current Average Full Cycle .375”(9.5mm) lead length at TL=75°C Typical Junction Capacitance (Note) Typical Thermal Resistance Notes: VRRM VRMS VDC Io 50 35 50 100 70 100 400 280 400 1.0 600 420 600 IFSM VF 25 1.1 5.0 A V IR 500 30 µA CJ RθJA 15 60 pF °C/W Measured at 1MHz and applied reverse voltage of 4.0 volts １ PDF 文件使用 "pdfFactory Pro" 试用版本创建 www.fineprint.cn