CHONGQING PINGYANG ELECTRONICS CO.,LTD.
KBU10A THRU KBU10M
SINGLE-PHASE SILICON BRIDGE RECTIFIER
VOLTAGE:50-1000V CURRENT:10.0A
FEATURES
·Low leakage ·Low forward voltage ·Surge overload ratings-250 Amperes ·Molded structure
KBU
.935(23.7) .895(22.7) .700(17.8) .600(16.8) .300 (7.5) .780(19.8) .740(18.8)
- AC
+
.052(1.3) DIA. .048(1.2) TYP.
1.00 (25.4)
MIN.
MECHANICAL DATA
·Case: Molded plastic ·Epoxy: UL 94V-0 rate flame retardant ·Lead: MIL-STD- 202E, Method 208 guaranteed ·Polarity: Symbols molded or marked on body ·Mounting position: Any ·Weight: 8.0 grams
.140 (5.3) .220(5.6) SPACING .180(4.6) .280(7.0) .268(6.8)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60Hz,resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL KBU10A Maximum Recurrent Peak Reverse Voltage Maximum RMS Bridge Input Voltage Maximum DC Blocking Voltage Maximum Average Forward rectified Output Current at TC=75°C Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rate load (JEDEC method) Maximum Forward Voltage Drop per element at 5.0A DC Maximum DC Reverse Current @ TA=25°C at Rated DC Blocking Voltage @ TA=100°C per element VRRM VRMS VDC Io IFSM VF IR 50 35 50
KBU10B KBU10D KBU10G KBU10J KBU10K KBU10M
units
V V V A A V µA
100 70 100
200 140 200
400 280 400 10.0 250 1.0 10 500
600 420 600
800 560 800
1000 700 1000
I2t 127 A2Sec I2t Rating for Fusing (t
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